79C04085 MAXWELL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 20
Technical content
All data sheets are subject to change without notice (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
4 Megabit (512k x 8-bit)
©2004 Maxwell Technologies All rights reserved.
10.13.04 Rev 15
- Four 128k x 8-bit EEPROMs MCM R AD-PAK® radiation-hardened against natural space radiation Total dose hardness: - > 100 krad (Si), depending upon space mission Excellent Single Event Effects - SEL > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode Package: - 40 pin R AD-PAK® flat pack - 40 pin X-Ray Pak TM flat pack - 40 pin Rad-Tolerant flat pack High speed: - 120, 150, and 200 ns maximum access times available D a t a Polling and Ready/Busy signal Software data protection Write protection by RES pin High endurance - 10,000 erase/write (in Page Mode), - 10 year data retention Page write mode: 1 to 128 byte page Low power dissipation - 80 mW/MHz active mode - 440 µ W standby mode DESCRIPTION: Maxwell Technologies’ 79C0408 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose toler- ance, depending upon space mission. Using Maxwell Technol- ogies’ patented radiation-hardened R AD-PAK® MCM packaging technology, the 79C0408 is the first radiation-hard- ened 4 Megabit MCM EEPROM for space applications. The 79C0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79C0408 is capable of in-system elec- trical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0408, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented R AD-PAK® packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, the R AD-PAK® package provides greater than 100 krad (Si) radiation dose tolerance. This prod- uct is available with screening up to Class K. 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 A0-16 WE R/ B RES OE CE1 CE2 CE3 CE4 FEATURES: Logic Diagram
4 Megabit (512k x 8-bit) EEPROM MCM 79C0408
- V IN MIN = -3.0V FOR PULSE WIDTH <50NS.
TABLE 1. 79C0408 PIN DESCRIPTION
29 OE Output Enable
34 WE Write Enable
5 RDY/BUSY Ready/Busy
35 RES Reset
TABLE 2. 79C0408 ABSOLUTE MAXIMUM RATINGS TABLE 3. 79C0408 RECOMMENDED OPERATING CONDITIONS
- V IL min = -1.0V for pulse width < 50 ns
TABLE 4. 79C0408 CAPACITANCE1 TABLE 5. DELTA PARAMETERS TABLE 6. 79C0408 DC ELECTRICAL CHARACTERISTICS
- I LI on RES = 100 uA max.
TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS1
- Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (inclu ding
scope and jig); reference levels for measuring timing - 0.8V/1.8V. DF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
- Use this divice in a longer cycle than this value.
internal write operation within this value. TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
FIGURE 1. READ TIMING WAVEFORM
- Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
TABLE 9. 79C0408 M ODE SELECTION 1, 2
- Refer to the recommended DC operating conditions.
- For CE 1-4 only one CE can be used (“on”) at a time.
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. DATA POLLING TIMING WAVEFORM
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) details of various techniques to preserve data protection. erase and write mode automatically and only the input data are written into the EEPROM.
13All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved. During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is per- forming a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be kept high during read and programming because it doesn’t provide a latch function. Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE , OE, WE) during Operation.
14All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis- take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at V CC on/off When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V CC on/off by using a CPU reset signal to RES pin. RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non- protection mode to the protection mode. 10mS min
15All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec- tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
16All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved. Note: All dimensions in inches
40 PIN RAD-PAK® PACKAGE DIMENSIONS
A 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D -- 0.850 0.860 E 0.985 0.995 1.005 E1 -- -- 1.025 E2 0.890 0.895 -- E3 0.000 0.050 -- e 0.040 BSC L 0.380 0.390 0.400 Q 0.214 0.245 0.270 S1 0.005 0.038 -- N4 0 Pin #1 ID
17All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved.
40 PIN X-RAY-PAKTM FLAT PACKAGE DIMENSIONS
NOTE: All Dimensions in Inches SYMBOL DIMENSION MIN NOM MAX A 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D 0.840 0.850 0.860 E 0.985 0.995 1.005 E2 -- 0.785 -- E3 -- 0.105 -- e 0.040 BSC L 0.340 0.350 0.400 Q 0.050 0.065 0.075 S1 -- 0.035 -- N4 0
18All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved.
40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS
A 0.202 0.224 0.246 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D -- 0.850 0.860 E 0.985 0.995 1.005 E1 -- -- 1.025 E2 0.890 0.895 -- E3 0.000 0.050 -- e 0.040 BSC L 0.380 0.390 0.400 Q 0.190 0.220 0.270 S1 0.005 0.038 -- N4 0 NOTE: All Dimensions in Inches
19All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved. Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Tech- nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
20All data sheets are subject to change without notice ©2004 Maxwell Technologies All rights reserved. Feature Option Details79C0408 XX F X -XX Access Time Screening Flow Package Radiation Feature Base Product Nomenclature 12 = 120 ns 15 = 150 ns 20 = 200 ns Multi Chip Module (MCM) K = Maxwell Class K H = Maxwell Class H I = Engineering (testing @-55°C, +25°C and +125°C) E = Engineering (testing @ +25°C F = Flat Pack RP = R AD-PAK® package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level
4 Megabit (512k x 8-bit) EEPROM
XP = X-Ray Pak