78L05

78L05 HDSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

H igh Diode Semiconductor TO- 9 2 Electrical Characteristics (T=25℃ Unless otherwise specified） 78L05 Maximum output current OM : 0.1A Output voltage V O : 5V Continuous total dissipation P D : 0.625 W a = 25 ℃ ) TO-92 Encapsulate Three-terminal Voltage Regulator Parame t e r S y m b o l V a l u e U n i t Input Voltage V i 30 V Thermal Resistance from Junction to Ambient R θJA 160 ℃/W Operating Junction Temperature Range T OPR -40~+125 ℃ Storage Temperature Range T STG -65 ~+150 ℃ C 0 0.1μF Parameter Symbol Test conditions M in T yp Max Unit V 7V≤Vi≤20V, Io=1mA~40mA 4.75 5.0 5.25 V Output voltage Vo Io=1mA~70mA 0-125℃ 4.75 5.0 5.25 V Io=1mA~100mA 25℃ 15 60 mV Load Regulation ΔVo Io=1mA~40mA 25℃ 8 30 mV 7V≤Vi l ≤20V 32 150 mV Line regulation ΔVo 8V≤Vi≤20V 25℃ 26 100 mV Quiescent Current Iq 25℃ 3.8 6 mA ΔIq 8V ≤Vi≤20V 1.5 mA Quiescent Current Change ΔIq 1mA ≤V l ≤40mA Output Noise Voltage V N 10Hz ≤f≤100KHz 25℃ 42 Ripple Rejection RR 8V ≤Vi≤20V,f=120Hz 41 49 dB Dropout Voltage Vd 25℃ 1.7 V T Y PICA L A P P L I C A T I O N Vi 3 1 V o U T C C i 0.33μF Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as P o s s i b l et o t h e r e g u l a t o r s . 78L05 * Pulse test. mA 0.1 25℃ V V 4.85 4.80 4.90 5.0 5.0 5.0 5.15 5.20 5.10 μV/Vo 0-125℃ 0-125℃ 0-125℃ 1. OUT 2. GND 3. IN I

H igh Diode Semiconductor Typical Characteristics -25 0 25 50 75 100 125 4.0 4.5 5.0 5.5 6.0 0 5 10 15 20 25 30 456789 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -25 0 25 50 75 100 125 125 250 375 500 625 750 V in =10V I O =5mA Output Voltage vs Junction Temperature OUTPUT VOLTAGE V O (V) JUNCTION TEMPERATURE T J ( ) I O =0mA T J =25 OUTPUT VOLTAGE V O (V) INPUT VOLTAGE V IN (V) Output Characteristics I O =0mA I O =40mA I O =70mA I O =100mA T J =25 OUTPUT VOLTAGE V O (V) INPUT VOLTAGE V IN (V) Dropout Characteristics QUIESCENT CURRENT I Q (mA) INPUT VOLTAGE V IN (V) Quiescent Current vs Input Voltage I O =0mA T J =25 -40 Current Cut-off Grid Voltage OUTPUT VOLTAGE V O (V) OUTPUT CURRENT I O (A) V IN =10V T J =25 Pulsed Power Derating Curve POWER DISSIPATION P D (mW) JUNCTION TEMPERATURE T J ( )

H igh Diode Semiconductor Package Outline Dimensions Suggested Pad Layout TO- 9 2 TO- 9 2 SYMBOL MIN MAX SYMBOL MIN MAX A 4.1 4.3 K 0.36 0.56 B R2.0 R2.2 L 1.35 1.45 C 4.1 M 12.00 12.5 D 1.1 1.2 N 1.24 1.3 E 3.13 3.33 O 5° F Φ1.48 Φ1.52 P 5° G 4.4 4.6 Q 0.37 0.39 H 2.2 2.3 I 0.36 0.56 J 0.5 0.6 单位：mm

H igh Diode Semiconductor TO-92 7DSHDQG5HHO Packge Box Box Size(mm) Carton Carton Size(mm) TO-92 2000PCS 343×158×42 20000PCS 470×358×180 Symbol mm Inches Min Nom Max Min Nom Max P 12.4 — 13 0.488 — 0.512 F1,F2 2.75 3.00 3.25 F3,F4 2.75 3.00 3.25 ︱ F1-F2︱ — — 0.4