75NF75 ESTEK | Alldatasheet

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Technical content

V DSS = 75V I D25 = 75A R DS(ON) = 13.0 mΩ z Dynamic dv/dt Rating z 175°C Operating Temperature z Fast switching z Ease of Paralleling z Simple Drive Requirements

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its Pin1–Gate Pin2–Drain Pin3–Source wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I D C =25°C Continuous Drain Current, V GS @10V I D C =100°C Continuous Drain Current, V GS @10V I DM Pulsed Drain Current 300 A P D C =25°C Power Dissipation 200 W Linear Derating Factor 1.5 W/°C V GS Gate-to-Source Voltage ±20 V E AR Single Pulse Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.9 V/ns T J T STG Operating Junction and Storage Temperature Range –55 to +175 Soldering Temperature, for 10 seconds 300(1.6mm from case) ْ°C Mounting Torque,6-32 or M3 screw

10 Ibf

in(1.1N Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case 0.65 R θCS Case-to-Sink, Flat, Greased Surface 0.50 R θJA Junction-to-Ambient ْ°C /W 75NF75

Electrical Characteristics @T J =25 ْ°C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 75 — V V GS =0V,I D 250uA V (BR)DSS T J Breakdown Voltage Temp. Coefficient — 0.074 — V/°C Reference to 25°C,I D =1mA R DS(on) Static Drain-to-Source On-resistance — — 13.0 mΩ V GS =10V,I D =40A V GS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS GS , I D =250μA g fs Forward Transconductance 20 — S V DS =25V,I D =40A — — V DS =75V,V GS =0V I DSS Drain-to-Source Leakage current — — 250 μA V DS =60V,V GS =0V,T J =150°C Gate-to-Source Forward leakage — — 100 V GS =20V I GSS Gate-to-Source Reverse leakage — — -100 nA V GS =-20V Q g Total Gate Charge — — 160 Q gs Gate-to-Source charge — — Q gd Gate-to-Drain ("Miller") charge — — nC I D = 4 0 A V DS = 6 0 V V GS =10V See Fig.6 and 13 t d(on) Turn-on Delay Time — 13 t r Rise Time — 64 t d(off) Turn-Off Delay Time — 49 t f Fall Time — 48 nS V DD = 3 8 V I D = 4 0 A R G =2.5Ω V GS =10V See Figure 10 L D Internal Drain Inductance — 4.5 L S Internal Source Inductance — 7.5 nH Between lead, 6mm(0.25in.) from package and center of die contact C iss Input Capacitance — 3820 — C oss Output Capacitance — 610 — C rss Reverse Transfer Capacitance — 130 — pF V GS = 0 V V DS = 2 5 V f=1.0MH Z See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) I SM Pulsed Source Current . (Body Diode) 300 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage 1.3 V T J =25°C,I S =40A,V GS =0V t rr Reverse Recovery Time 100 150 nS Q rr Reverse Recovery Charge 410 610 nC T J =25°C,I F =40A di/dt=100A/μs t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L D Notes: ③ Starting T J = 25°C, L = 370mH, R G = 25 Ω , I AS = 40A, V GS =10V (See Figure 12) ④ I SD ≤ 40A, di/dt ≤ 300A/μs, V DD ≤ V (BR)DSS J ≤ 175°C ⑤ Pulse width ≤ 400μs; duty cycle ≤ 2%. ① Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ② Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) 75NF75