6A05-6A10 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode 6AX X:From 05 to 10 6A05 THRU 6A10 R-6 Item Symbol Unit Conditions 6A 05 1 2 4 6 8 10 Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance load, Ta=50℃ Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 400 Junction Temperature T J -55~+125 Storage Temperature T STG ℃ -55 ~ +150 Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =6.0A 1 Peak Reverse Current I RRM1 μA V RM RRM Ta=25℃ 5 I RRM2 Ta=125℃ 50 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 20 R θJ-L Between junction and lead 4 35 70 140 280 420 560 700 V RMS V Maximum RMS Voltage
H igh Diode Semiconductor IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1.0 2 10 20 100 100 200 300 400 500 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 100 VF(V) 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60H z Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta 100 3.0 6.0 1.5 7.5 4.5 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000
H igh Diode Semiconductor R-6 Unit: in inches (millimeters) 1.0(25.4) MIN .360(9.10) .340(8.60) .052(1.32) .047(1.20) DIA .360(9.10) .340(8.60) 1.0(25.4) MIN DIA
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers