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Technical content

Features

  • N-channel,normallevel
  • 175°Crated
  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)
  • Pb-freeleadplating;RoHScompliant
  • QualifiedaccordingtoJEDEC1)fortargetapplication
  • Halogen-freeaccordingtoIEC61249-2-21
  • Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 250 V RDS(on),max 67 mΩ ID 24 A Type/OrderingCode Package Marking RelatedLinks BSC670N25NSFD PG-TDSON-8 670N25NF - 1) J-STD20 and JESD22

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet TableofContents

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

19 A TC=25°C

TC=100°C Pulsed drain current1) ID,pulse - - 96 A TC=25°C Avalanche energy, single pulse EAS - - 69 mJ ID=16A,RGS=25Ω Reversediodedv/dt dv/dt - - 60 kV/µs ID=46A,VDS=125V, di/dt=1500A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 150 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 0.6 1 K/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 75 K/W - Thermal resistance, junction - ambient, 6 cm2 cooling area2) RthJA - - 50 K/W - 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 250 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=90µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=200V,VGS=0V,Tj=25°C VDS=200V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 59 67 mΩ VGS=10V,ID=24A Gate resistance RG - 3.3 5 Ω - Transconductance gfs 24 47 - S |VDS|>2|ID|RDS(on)max,ID=24A 1) See Diagram 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1810 2410 pF VGS=0V,VDS=125V,f=1MHz Output capacitance1) Coss - 103 137 pF VGS=0V,VDS=125V,f=1MHz Reverse transfer capacitance1) Crss - 5.4 - pF VGS=0V,VDS=125V,f=1MHz Turn-on delay time td(on) - 8.0 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Rise time tr - 3.6 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Fall time tf - 4.0 - ns VDD=125V,VGS=10V,ID=12A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 8.2 - nC VDD=125V,ID=24A,VGS=0to10V Gate to drain charge Qgd - 2.9 - nC VDD=125V,ID=24A,VGS=0to10V Switching charge Qsw - 5.6 - nC VDD=125V,ID=24A,VGS=0to10V Gate charge total1) Qg - 22 30 nC VDD=125V,ID=24A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=24A,VGS=0to10V Output charge Qoss - 48 - nC VDD=125V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 24 A TC=25°C Diode pulse current3) IS,pulse - - 96 A TC=25°C Diode hard commutation current4) IS,hard - - 46 A TC=25°C,diF/dt=1500A/µs Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=24A,Tj=25°C Reverse recovery time1) trr - 69 138 ns VR=125V,IF=16.1A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 153 306 nC VR=125V,IF=16.1A,diF/dt=100A/µs 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition 3) Diode pulse current is defined by thermal and/or package limits 4) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 100 150 200 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 10 V 7 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 4.5 V 5 V 7 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] gfs=f(ID);Tj=25°C

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 100 120 140 160 180 200 220 98% typ RDS(on)=f(Tj);ID=24A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 900 µA 90 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 120 160 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 25°C, 98% 175°C, 98% IF=f(VSD);parameter:Tj

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 100 101 102 103 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 200 V 125 V 50 V VGS=f(Qgate);ID=24Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 220 230 240 250 260 270 280 290 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet Figure2OutlineFootprint(TDSON-8)

OptiMOSTM3Power-Transistor,250V BSC670N25NSFD Rev.2.1,2016-12-05Final Data Sheet RevisionHistory BSC670N25NSFD Revision:2016-12-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.2 2016-05-13 Rev. 1.2 (preliminary datasheet) 2.0 2016-10-25 Release of final version 2.1 2016-12-05 Update Eas TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.