66004 MICROPAC | Alldatasheet

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Technical content

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 7 - 3 66004 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Mii OPTOELECTRONIC PRODUCTS DIVISION Features:

  • High Reliability
  • Rugged package
  • Stability over wide temperature
  • 40kVdc electrical isolation Applications:
  • Grid current modulator
  • Power Supply Feedback
  • Switching between power supplies
  • Patient station isolation

DESCRIPTION

In the 66004, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability, hermetically sealed, ceramic package. Available in commercial (0° to +70°C), extended temperature range (-40° to +85°C) and full Military temperature range (-55° to +125°C). Contact the factory for special custom or multi-channel requirements! ABSOLUTE MAXIMUM RATINGS Notes: 1. Derate linearly to 125 °C free-air temperature at the rate of 2.45 mW/°C. Package Dimensions Schematic Diagram NOTE: BLACK DOT INDICATES ANODE FOR LED RED DOT INDICATES COLLECTOR FOR TRANSISTOR. 0.8493 [21.57] RED DOT 0.500 MIN [12.70] 16,000 V, BLACK DOT ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] NOMINAL Ø0.0175 [Ø0.44] CATHODE(-) 0.500 MIN [12.70]

2 LEADS

ANODE(+) BASE Ø0.1550 [Ø3.94] Ø0.3100 [Ø7.87]

3 LEADS

Ø0.0175 [Ø0.44] EMITTER(-) COLLECTOR (+) (1) (2) (3) (4) (5) A K E B C (4)B (2) K (1) A (5) (3)C -X01 -X02

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 7 - 4 66004 40kV HIGH VOLTAGE ISOLATER

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Input Diode Static Reverse Current 66004-X01 66004-X02 IR 100 µA V R = 2V Input Diode Static Forward Voltage 66004-X01 66004-X02 VF 1.15 1.8 V I F = 20mA Reverse Breakdown Voltage 66004-X01 66004-X02 BVR 21 0 V I R = 100µA Input Diode Capacitance 66004-X01 66004-X02 CIN 25 pF V = 0V, f = 1MHz OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Collector-Emitter Breakdown Voltage V (BR)CEO 35 V I C = 1mA, IB = 0, IF = 0 Collector-Emitter Dark Current I CEO 75 300 nA nA VCE = 10V, IF = 0mA COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Current Transfer Ratio 66004-X01 66004-X02 CTR 5 100 %V CE = 5V, IF = 10mA Collector-Emitter Saturation Voltage 66004-X01 66004-X02 VCE(SAT) 0.5 1.2 VI F = 50mA, IC = 1mA DC Isolation Voltage 66004-X01 66004-X02 VISO 40 kV Rise Time 66004-X01 66004-X02 tr 10 µsV CC = 5V, IF =16mA, RL=100Ω Fall Time 66004-X01 66004-X02 tf 10 µsV CC = 5V, IF =16mA, RL=100Ω RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, High Level I FH 16 50 mA Supply Voltage V CE 51 0 V Operating Temperature T A -55 125 °C SELECTION GUIDE PART # PART DESCRIPTION 66004-001 Transistor output, military operating range (-55 ° to +125°C) 66004-101 Transistor output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) 66004-011 Transistor output, commercial version Isolator(0° to 70°C) 66004-002 Darlington output, military operating range (-55 ° to +125°C) 66004-102 Darlington output, full mil-temp (-55 ° to +125°C) with 100% device screening (on discrete components) 66004-012 Darlington output, commercial version Isolator(0 ° to 70°C)