61113 MICROPAC | Alldatasheet

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Technical content

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8 - 14

61113 GENERAL PURPOSE (NPN) TRANSISTOR

(2N2369AUB) Mii OPTOELECTRONIC PRODUCTS DIVISION Features:

  • Hermetically sealed
  • Hermetically sealed 3 pin LCC
  • MIL-PRF-19500 screening available Applications:
  • Analog Switches
  • Signal Conditioning
  • Small Signal Amplifiers
  • High Density Packaging

DESCRIPTION

The 61113 is a N-P-N, general-purpose switching and amplifier transistor in a 3 pin leadless chip carrier package. All packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level. ABSOLUTE MAXIMUM RATINGS Package Dimensions Schematic Diagram ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] ORIENTATION KEY 3 PLACES 0.105 [2.67] 0.085 [2.16] 0.125 [3.18] 0.115 [2.92] E C 0.054[1.37] 0.046 [1.17] 0.024 [0.61] 0.016 [0.41] 0.036 [0.91] 0.024 [0.61]

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8 - 15

61113 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB)

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage BVCBO 40 V dc IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40 V dc IC = 10µA , IB = 0µA Collector-Emitter Sustaining Voltage BVCES 15 V dc IC = 10mA , IB = 0µA Emitter-Base Breakdown Voltage BVEBO 4.5 V dc IC = 0, IE = 10µA Collector-Base Cutoff Current ICBO 0.4 µAV CB = 20V, IE = 0 30 µAV CB = 20V, IE = 0, TA = 150°C Collector-Emitter Cutoff Current ICES 0.4 µAV CE = 20V Forward-Current Transfer Ratio hfe -1 2 0 - V CE = 1V, IC = 10mA hfe 20 - V CE = 1V, IC = 100mA hfe 20 - V CE = 2V, IC = 100mA hfe4 20 - V CE = 1V, IC = 10mA @ -55ºC 1 hfe6 30 - V CE = 0.35V, IC = 10mA @ -55ºC Collector-Emitter Saturation Voltage VCE (SAT) 0.20 V I C = 10mA, IB = 1mA 1 VCE (SAT) 0.30 V I C = 10mA, IB = 1mA @ +125ºC VCE (SAT) 0.25 V I C = 30mA, IB = 3mA VCE (SAT) 0.50 V I C = 100mA, IB = 10mA 1 Base-Emitter Saturation Voltage VBE (SAT) 0.7 0.85 V I C = 10mA, IB = 1mA 1 VBE (SAT) 0.59 - V I C = 10mA, IB = 1mA @ +125ºC VBE (SAT) 1.02 V I C = 10mA, IB = 1mA @ -55ºC

1.15 V I C = 30mA, IB = 3mA

VBE (SAT) 1.60 V I C = 100mA, IE = 10mA 1 SMALL-SIGNAL CHARACTERISTICS Current-Gain – Bandwidth Product fr 500 MHz V CB = 10V, 100kHz, < f < 1 MHz Input Capacitance (Output Open Capacitance) CIBO 25 pF V EB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 nS V CC = 30V, IC = 150mA, IB1 = 15mA Turn-Off Time toff 300 nS V CC = 30V, IC = 150mA, IB1 = IB2 = 15mA NOTES: 1. Pulse width < 300µs, duty cycle < 2.0%. SELECTION GUIDE PART NUMBER PART DESCRIPTION 61113-001 2N2369AUB PNP transistor, commercial version 61113-002 2N2369AUB PNP transistor, JAN level screening 61113-003 2N2369AUB PNP transistor, JANTX level screening 61113-004 2N2369AUB PNP transistor, JANTXV level screening 61113-005 2N2369AUB PNP transistor, JANS level screening NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.