61090 MICROPAC | Alldatasheet

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Technical content

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8 - 8

61090 SURFACE MOUNT (NPN)

GENERAL PURPOSE TRANSISTOR (2N2222AUB) Mii OPTOELECTRONIC PRODUCTS DIVISION Features:

  • Hermetically sealed
  • Miniature package to minimize circuit board area
  • Ceramic surface mount package
  • Footprint and pin-out matches SOT-23 packaged transistors
  • MIL-PRF-19500 screening available Applications:
  • Analog Switches
  • Signal Conditioning
  • Small Signal Amplifiers
  • High Density Packaging

DESCRIPTION

The 61090 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic package is ideal for designs where board space and device weight are important requirements. This device is available custom binned to customer specifications or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Package Dimensions Schematic Diagram ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] 0.125 [3.18] 0.115 [2.92] 0.105 [2.67] 0.085 [2.16] ORIENTATION KEY C E

3 PLACES

0.054 [1.37] 0.046 [1.17] 0.036 [0.91] 0.024 [0.61] 0.024 [0.61] 0.016 [0.41]

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8 - 9

61090 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB)

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage BVCBO 75 V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 50 V IC = 10mA, IB = 0µA Emitter-Base Breakdown Voltage BVEBO 6V IC = 0, IE = 10µA Collector-Base Cutoff Current ICBO 10 nA VCB = 60V, IE = 0 10 µA VCB = 60V, IE = 0, TA = 150°C Collector-Emitter Cutoff Current ICES 50 nA VCE = 50V Emitter-Base Cutoff Current IEBO 10 nA VEB = 4.0V, IC =0 hfe1 50 - VCE = 10V, IC = 0.1mA hfe2 75 325 - VCE = 10V, IC =1mA Forward-Current Transfer Ratio hfe3 100 - VCE = 10V, IC =10mA hfe4 100 300 - VCE = 10V, IC = 150mA 1 hfe5 30 - VCE = 10V, IC = 500mA 1 hfe6 35 - VCE = 10V, IC = 10mA @ -55°C Collector-Emitter Saturation Voltage VCE (SAT) 0.30 V IC = 150mA, IB = 15mA 1

1.0 V IC = 500mA, IB = 50mA 1

Base-Emitter Saturation Voltage VBE (SAT) 0.6 1.20 V IC = 150mA, IB = 15mA 1

2.0 V IC = 500mA IB = 50mA 1

SMALL-SIGNAL CHARACTERISTICS Small Signal Forward Current Transfer Ratio hfe 50 - VCE = 10V, IC = 1mA, f = 1kHz Small Signal Forward Current Transfer Ratio hfe 2.5 - VCE = 20V, IC = 20mA, f = 100kHz Open Circuit Output Capacitance COBO 8p f VCB = 10V, 100kHz, < f < 1 MHz Input Capacitance (Output Open Capacitance) CIBO 25 pf VEB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 ns VCC = 30V, IC = 150mA, IB1 = 15mA Turn-Off Time toff 300 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA NOTES: 1. Pulse width < 300µs, duty cycle < 2.0%. RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Bias Voltage-Collector/Emitter I C 10 150 mA Collector-Emitter Voltage V CE 52 0 V SELECTION GUIDE PART NUMBER PART DESCRIPTION 61090-001 2N2222AUB PNP transistor, commercial version 61090-002 2N2222AUB PNP transistor, JAN level screening 61090-101 2N2222AUB PNP transistor, JANTX level screening 61090-102 2N2222AUB PNP transistor, JANTXV level screening 61090-300 2N2222AUB PNP transistor, JANS level screening