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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications
  • Widedistanceof4.25mmbetweentheleads

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 600 mΩ ID. 10.3 A Qg.typ 20.5 nC ID,pulse 19 A Eoss@400V 1.9 µJ Type/OrderingCode Package Marking RelatedLinks IPAW60R600CE PG - TO220 FullPAK WideCreepage 60S600CE see Appendix A

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet TableofContents

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 10.3

6.5 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 19 A TC=25°C Avalanche energy, single pulse EAS - - 133 mJ ID=1.3A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.3A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Full PAK) Ptot - - 28 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 7.3 A TC=25°C Diode pulse current2) IS,pulse - - 19 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Power dissipation (Non FullPAK) TO-220 Ptot - - 82 W - Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max. Maximum duty cycle D=0.50, TO220 equivalent 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics(FullPAK) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.5 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.54 1.40 0.60 - Ω VGS=10V,ID=2.4A,Tj=25°C VGS=10V,ID=2.4A,Tj=150°C Gate resistance RG - 10 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 444 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 21 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable9 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable9 Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable9 Fall time tf - 11 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate to drain charge Qgd - 10.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate charge total Qg - 20.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=3A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3A,Tj=25°C Reverse recovery time trr - 250 - ns VR=400V,IF=3A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 2.1 - µC VR=400V,IF=3A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 16 - A VR=400V,IF=3A,diF/dt=100A/µs; see table 8

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(FullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance(FullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.80 1.00 1.20 1.40 1.60 1.80 2.00 RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -40 -15 110 135 0.10 0.30 0.50 0.70 0.90 1.10 1.30 1.50 typ 98% RDS(on)=f(Tj);ID=2.4A;VGS=10V

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 480 V 120 V VGS=f(Qgate);ID=3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 120 140 EAS=f(Tj);ID=1.3A;VDD=50V

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -40 -15 110 135 160 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=0.25mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 6PackageOutlines MILLIMETERS 4.25 (BSC)cDED1 L1eLN b2AA1bA2DIM 0.40 1.70 15.479.1710.7012.583 MIN4.502.340.752.65 0.6090.3610.4210.016 0.1770.0920.0300.104 0.495 4.902.740.902.95MAX 0.024 30.6410.4450.5270.091 INCHESMINMAX0.1930.1080.0350.116 EUROPEAN PROJECTION ISSUE DATE 0SCALE 4 mm REVISION28-04-201501 DOCUMENT NO. 0.167 (BSC)0.067 0.98 0.0391.26 0.050 ¡33.00 0.1183.30 0.130 DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS E DD1L1 H b2 b b5b3 P c AA1 Q 022 L0.381BA e Z8B00176938 Figure1OutlinePG-TO220FullPAKWideCreepage,dimensionsinmm/inches

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSTMCEWebpage:www.infineon.com
  • IFXCoolMOSTMCEapplicationnote:www.infineon.com
  • IFXCoolMOSTMCEsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCEPowerTransistor IPAW60R600CE 2016-03-31Final Data Sheet RevisionHistory IPAW60R600CE Revision:2016-03-31 Previous Revision Date Subjects (major changes since last revision) 2015-10-07 Release of final version 2015-10-28 Revised electrical characteristics 2016-03-31 Modified Id ratings TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.