60R330M

60R330M WUMC | Alldatasheet

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Technical content

Wuxi Unigroup Microelectronics Co.,Ltd V4.0 www.tsinghuaicwx.com

DESCRIPTION

600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting markets， designed by Wuxi Unigroup Microelectronics Company.

FEATURES

 Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant

APPLICATIONS

 Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPA60R330M TO-220F 60R330M Key Performance Parameters Parameter Value Unit VDS @ Tj,max 600 V RDS(on),max 0.33 Ω ID 11 A Qg,typ 19 nC IDM 33 A 600V Super-Junction Power MOSFET

Wuxi Unigroup Microelectronics Co.,Ltd V4.0 www.tsinghuaicwx.com Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit TO-220F Drain-Source Voltage (VGS = 0V) VDSS 600 V Continuous Drain Current TC = 25ºC ID A TC = 100ºC 6.6 Pulsed Drain Current (note1) IDM 33 A Gate-Source Voltage VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 210 mJ Repetitive Avalanche Energy (note2) EAR 0.32 mJ Avalanche Current IAR 1.8 A MOSFET dv/dt ruggedness, VDS = 0...480V dv/dt 50 V/ns Power Dissipation PD 31 W Continuous Body Diode Current IS 9.4 A Pulsed Diode Forward Current (note1) ISM 33 Reverse diode dv/dt (note3) dv/dt 15 V/ns Maximum diode commutation speed (note3) dif/dt 500 A/us Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit TO-220F Thermal Resistance, Junction-to-Case RthJC 4 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 80

Wuxi Unigroup Microelectronics Co.,Ltd V4.0 www.tsinghuaicwx.com Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 600 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V, TJ = 25ºC -- -- 1 μA VDS = 600V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5.5A -- 0.29 0.33 Ω Gate resistance RG f = 1.0MHz open drain -- 18 -- Ω Dynamic Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz -- 1021 -- pF Output Capacitance Coss -- 43 -- Reverse Transfer Capacitance Crss -- 6 -- Total Gate Charge Qg VDD = 480V, ID = 11A, VGS = 10V -- 19.0 -- nC Gate-Source Charge Qgs -- 4.8 -- Gate-Drain Charge Qgd -- 7.2 -- Turn-on Delay Time td(on) VDD = 400V, ID = 11A, RG = 25Ω -- 28 -- ns Turn-on Rise Time tr -- 61 -- Turn-off Delay Time td(off) -- 89 -- Turn-off Fall Time tf -- 41 -- Drain-Source Body Diode Characteristics Body Diode Voltage VSD TJ = 25ºC, ISD = 5.5A, VGS = 0V -- 0.9 1.2 V Reverse Recovery Time trr VR = 400V, IF = IS, diF/dt = 100A/μs -- 377 -- ns Reverse Recovery Charge Qrr -- 3.4 -- μC Peak Reverse Recovery Current Irrm -- 17.8 -- A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG

Wuxi Unigroup Microelectronics Co.,Ltd V4.0 www.tsinghuaicwx.com Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform

Wuxi Unigroup Microelectronics Co.,Ltd V4.0 www.tsinghuaicwx.com TO-220F Unit:mm Symbol Min. Nom Max. E 9.96 10.16 10.36 A 4.50 4.70 4.90 A1 2.34 2.54 2.74 A2 0.30 0.45 0.60 A4 2.56 2.76 2.96 c 0.40 0.50 0.65 c1 1.20 1.30 1.35 D 15.57 15.87 16.17 H1 6.70REF Unit:mm Symbol Min. Nom Max. e 2.54BSC L 12.68 12.98 13.28 L1 2.88 3.03 3.18 ΦP 3.03 3.18 3.38 ΦP3 3.15 3.45 3.65 F3 3.15 3.30 3.45 G3 1.25 1.35 1.55 b1 1.18 1.28 1.43 b2 0.70 0.80 0.95

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