60N60FD1 SILAN | Alldatasheet
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Technical content
SGT60N60FD1PN/P7/PS/PT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.7 http: //www.silan.com.cn Page 1 of 10 60A, 600V FIELD STOP IGBT
DESCRIPTION
SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application.
FEATURES
60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A Low conduction loss Fast switching High input impedance 1 2 31 2 3 C G E 1 2 3 TO-3P TO-247S-3LTO-247-3L TO-3PN1 2 3 NOMENCLATURE SGT 60 N 60 F D 1 P7 IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V D : Packaged with fast recovery diode R : RC IGBT Package P7 : TO-247-3L 1,2,3… : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range L : Ultra low switching，recommended frequency ~2KHz Q : Low switching，recommended frequency2~20KHz S : Standard frequency ，recommended frequency5~40KHz F : Fast switching，recommended frequency10~60KHz UF : Ultra fast switching，recommended frequency 40KHz~
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SGT60N60FD1PN TO-3P 60N60FD1 Pb free Tube SGT60N60FD1P7 TO-247-3L 60N60FD1 Pb free Tube SGT60N60FD1PS TO-247S-3L 60N60D1 Pb free Tube SGT60N60FD1PT TO-3PN 60N60FD1 Pb free Tube
SGT60N60FD1PN/P7/PS/PT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.7 http: //www.silan.com.cn Page 2 of 10 ABSOLUTE MAXIMUM RATINGS (TC = 25°C UNLESS OTHERWISE NOTED) Characteristics Symbol Ratings Units Collector to Emitter Voltage VCE 600 V Gate to Emitter Voltage VGE ± 20 V Collector Current TC=25°C IC 120 A TC=100°C 60 Pulsed Collector Current ICM 180 A Maximum Power Dissipation (TC=25C) PD 321 W Operating Junction Temperature TJ -55～+175 C Storage Temperature Range Tstg -55～+175 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Units Thermal Resistance, Junction to Case(IGBT)(TO-3P) RθJC 0.39 C/W Thermal Resistance, Junction to Case(FRD)(TO-3P) RθJC 1.10 C/W Thermal Resistance, Junction to Ambient(TO-3P) RθJA 40 C/W ELECTRICAL CHARACTERISTICS OF IGBT(TC=25°C, UNLESS OTHERWISE NOTED) Characteristics Symbol Test conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage BVCE VGE=0V,IC=250uA 600 -- -- V C-E Leakage Current ICES VCE=600V,VGE=0V -- -- 200 μA G-E Leakage Current IGES VGE=20V,VCE=0V -- -- ± 400 nA G-E Threshold Voltage VGE(th) IC=250uA,VCE=VGE 4.0 5.0 6.5 V Collector to Emitter Saturation Voltage VCE(sat) IC=60A,VGE=15V -- 2.2 2.7 V IC=60A,VGE=15V,TC=125C -- 2.6 -- V Input Capacitance Cies VCE=30V VGE=0V f=1MHz -- 2850 -- pF Output Capacitance Coes -- 294 -- Reverse Transfer Capacitance Cres -- 85 -- Turn-On Delay Time Td(on) VCE=400V IC=60A Rg=10Ω VGE=15V Inductive Load, -- 36 -- ns Rise Time Tr -- 142 -- Turn-Off Delay Time Td(off) -- 193 -- Fall Time Tf -- 136 -- Turn-On Switching Loss Eon -- 3.72 -- mJ Turn-Off Switching Loss Eoff -- 1.77 -- Total Switching Loss Est -- 5.49 -- Total Gate Charge Qg VCE=400V,IC=60A, VGE=15V -- 179 -- nC Gate to Emitter Charge Qge -- 23 -- Gate to Collector Charge Qgc -- 100 --
SGT60N60FD1PN/P7/PS/PT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.7 http: //www.silan.com.cn Page 3 of 10 ELECTRICAL CHARACTERISTICS OF FRD(TC=25°C UNLESS OTHERWISE NOTED) Characteristics Symbol Test conditions Min. Typ. Max. Units Diode Forward Voltage VFM V Diode Reverse Recovery Time Trr IES=30A,dIES/dt=200A/μs -- 38 -- ns Diode Reverse Recovery Charge Qrr IES=30A,dIES/dt=200A/μs -- 85 -- nC
Figure 19. Square Wave Impedance Simulation (IGBT) Figure 20. Square Wave Impedance Simulation (FRD)
SGT60N60FD1PN/P7/PS/PT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.7 http: //www.silan.com.cn Page 8 of 10 PACKAGE OUTLINE TO-3P Unit: mm D L e c A b 4.4 5.2 1.2 1.8 1.2 2.0 0.7 1.3 2.7 3.3 15.0 16.0 0.4 0.8 8.5 10.0 1.7 2.3
5.45 TYP
1.0 2.0 39.0 41.5 b 3.0 15.5 0.6 L1 22.6 23.6 D C e L 19.5 21.0L2 __ MAXNOMMIN MILLIMETER SYMBOL A TO-247-3L Unit: mm A Cb2 D E e L L1 Q b 15.50 16.10 4.40 5.20 20.80 21.30 19.72 20.22 5.80 A b c D E e L Q 4.80 5.00 5.20 2.21 2.41 2.59 1.85 2.00 2.15 1.11 1.36 3.252.91 0.51 0.75 21.00 15.80 5.00
5.44 BSC
19.92 4.30 5.60 6.00 1.91 2.25 MAX SYMBOL MIN NOM MILLIMETER
SGT60N60FD1PN/P7/PS/PT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.7 http: //www.silan.com.cn Page 9 of 10 PACKAGE OUTLINE(CONTINUED) TO-247S-3L Unit: mm E ØP D e b A e A b D 5.00 2.50 1.20 3.10 2.10 6.00 5.10 20.00 3.60 0.50 e E ØP 5.50 5.44 15.60 14.60 4.00 4.80 5.20 2.30 2.70 1.10 1.30 2.90 3.30 1.90 2.30 5.50 6.50 4.95 5.25 19.00 21.00 5.30 5.70 5.34 5.54 15.40 15.80 14.40 14.80 3.85 4.15 0.35 0.65 3.40 3.80 MIN NOM MAX MILLIMETER SYMBOL TO-3PN Unit: mm e b c G 4.6～5.0 ΦP B DD1 A 20.00 0.50 0.70 18.30 18.70 1.80 2.20 15.20 16.00 9.10 9.50 4.60 5.00 1.30 1.70 2.20 2.60 5.25 5.65 19.00 4.80 1.50 2.40 2.00 15.60 0.60 18.50 2.90 3.10 3.30 9.30 19.50 5.45 MAXNOMMIN MILLIMETER SYMBOL B D A c P 0.80 1.201.00b e G 3.20 3.00 3.40 2.80 3.00 3.20
SGT60N60FD1PN/P7/PS/PT_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.7 http: //www.silan.com.cn Page 10 of 10 Important notice : Part No.: SGT60N60FD1PN/P7/PS/PT Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.7 Revision History: 1. Add package outline of TO-3PN Rev.: 1.6 Revision History: 1. Add package outline of TO-247S-3L Rev.: 1.5 Revision History: 1. Modify Package stereogram and Important notice Rev.: 1.4 Revision History: 1. Update the package outline of TO-247-3L Rev.: 1.3 Revision History: 1. Modify the Max Value of Junction Temperature Rev.: 1.2 Revision History: 1. Modify annotation of Fig.13 Rev.: 1.1 Revision History: 1. Modify the characteristics Rev.: 1.0 Revision History: 1. First release The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be a ffected. There is a certain possibility of failure or malfunction of any semiconductor product under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sam ple and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exp orting, using and reselling our products, buyer must comply with the international export control laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn