2SC5270 PANASONIC | Alldatasheet
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2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output n Features l High breakdown voltage, and high reliability through the use of a glass passivation layer l High-speed switching l Wide area of safe operation (ASO) n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 1500 1600 1500 1600 600 120 150 –55 to +150 Unit V V V V A A A W 2SC5270 2SC5270A 2SC5270 2SC5270A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Symbol I CBO IEBO hFE V CE(sat) V BE(sat) fT tstg tf Conditions V CB = 1000V , IE = 0 V CB = 1500V , IE = 0 V CB = 1600V , IE = 0 V EB = 5V , IC = 0 V CE = 5V , IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A V CE = 10V , IC = 0.1A, f = 0.5MHz IC = 6A, IB1 = 1.5A, IB2 = –3A min typ 1.5 0.12 max 1.5 2.5 0.2 Unit mA mA mA V V MHz ms ms 2SC5270 2SC5270A 2SC5270 2SC5270A Unit: mm 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package 15.5–0.5 26.5–0.5 22.0–0.5 23.4 18.6–0.5 3.3–0.3 5.5–0.3 2.0 0.7–0.1 2.0 2.0 1.2 10.0 3.0–0.3 f3.2–0.1 4.5 5.45–0.3 123 5.45–0.3 1.1–0.1 2.0–0.2 4.0 5° 5° 0.7–0.1
Power Transistors 2SC5270, 2SC5270A PC —T a h FE —I C V CE(sat)—I C Area of safe operation (ASO) Area of safe operation, horizontal operation ASO tf —I B tstg—I B 0 160 40 120 80 14020 100 60 140 120 100 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink. (3) Without heat sink (PC =3.0W) (1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 11 0 510310 10 4102 102 VCE =5V TC =100˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 102 103 104 105 5000 4000 3000 2000 1000 IC /IB=4 TC =100˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.001 0.01 0.1 100 10ms100ms 1ms t=100µs DC ICP IC Non repetitive pulse TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 0 2000 500 15001000 f=64kHz, TC <90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. <1mA 2SC5270 2SC5270A Collector to emitter voltage VCE (V) Collector current IC (A) 05 413 2 1.0 0.8 0.6 0.4 0.2 0.6 0.7 0.5 0.3 0.1 TC =25˚C IC =6A fH=64kHz End-of-scan current IB end (A) Switching time tf (ms) 05 413 2 TC =25˚C IC =6A fH=64kHz End-of-scan current IB end (A) Switching time tstg (ms)