520E940C HB | Alldatasheet
Document overview
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Technical content
5.0mm INFRARED EMITTING DIODE 520E940C REV:A / 0 PACKAGE DIMENSIONS DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 1 QR0202-10B Note: 1.All Dimensions are in millimeters. 2.Tolerance is ±0.25mm(0.010 ") Unless otherwise specified. 3.Protruded resin under flange is 1.5mm(0.059 ") max. 4.Lead spacing is measured where the leads emerge from the package. 5.Specification are subject to change without notice
5.0mm INFRARED EMITTING DIODE 520E940C REV:A / 0
FEATURES
- EXTRA HIGH RADIANT POWER AND RADIANT INBTENSITY * LOW FORWARD VOLTAGE * SUITABLE FOR HIGH PULSE CURRENT OPERATIONTENSITY *HIGH RELIABILITY CHIP MATERIALS * Dice Material : GaA1As/GaAs * Lens Color : WATER CLEAR ABSOLUTE MAXIMUM RATING : ( Ta = 25°C ) SYMBOL PARAMETER INFRARED UNIT PD Power Dissipation 100 mW VR Reverse V oltage 5 V IF Average Forward Current 100 mA Topr Operating Temperature Range -35 °C to 85°C Tstg Storage Temperature Range -35 °C to 85°C Lead Soldering Temperature｛1.6mm(0.063 inch) From Body｝250°C ± 5°C for 3 Seconds ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C ) SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT VF Forward V oltage IF = 10mA IF = 50mA 1.2 1.4 1.6 V IR Reverse Current V R = 5V 10 µA λP Peak Emission Wavelength I F = 10mA 940 nm 2θ1/2 Half Intensity Angle IF = 10mA 22 deg IE Radiant Intensity I F = 10mA 30 mw/sr DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 2 QR0202-10C
5.0mm INFRARED EMITTING DIODE 520E940C REV:A / 0 DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 3