510E850C HB | Alldatasheet
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Hebei I.T. (Shanghai) Co., Ltd. Part No.：510E850C www.ledz.com LED SPECIFICATION Ø Features： l Single color l High Power output l Low power consumption l High reliability and long life Ø Descriptions： l Dice material ：AlGaAs l Emitting Color ：Infrared Emitting diodes l Device Outline ：φ5mm Round Type l Lens Type ：Black Transparent Ø Directivity: Note：
- All dimensions are millimeters.
- Tolerance is +/-0.25mmunless otherivise noted Radiation Angle DIRECTIVITY Relative Luminous Intensity 60° 90° 1.0 30° 0.50°30° Ta=25° C IF=20mA 1.0 60°90° 0.5
Hebei I.T. (Shanghai) Co., Ltd. Part No.：510E850C www.ledz.com LED SPECIFICATION Ø Absolute maximum ratings（Ta = 25℃） Characteristics Parameter Symbol Test Conditions Min. Max. Unit Power Dissipation Pd —— —— 100 mW Reverse Voltage VR IR=10μA 9 —— V Forward Current IFM Duty=0.01mS 1kHz —— 1000 mA Operating Temperature Range Topr —— -40 +85 ℃ Storage Temperature Range Tstr —— -40 +100 ℃ Soldering Temperature Tsd t≤5sec,2mm from case —— 260 ℃ Ø Electrical and optical characteristics （Ta = 25℃） Value Parameter Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF = 50mA ---- 1.55 1.8 V Reverse Current IR VR = 9V ---- ---- 10 μA Peak Wavelength λp IF = 50mA ---- 850 ---- nm Spectrum Width of Half Value Δλ IF = 50mA —— 45 —— nm Radiant Intensity Ie IF=50mA —— 160 —— mW/Sr Viewing Angle 2θ1/2 IF = 50mA ---- 13 ---- Deg.
Hebei I.T. (Shanghai) Co., Ltd. Part No.：510E850C www.ledz.com LED SPECIFICATION Ø Typical electrical/optical characteristic curves： 100 Relative Luminous Intensity Wavelength λ(nm) 500 600 700 800 1000900 1100 1.8 Forward Current(mA) Radiant Intensity(mW/sr) Relative Value at IF=50mA Radiant Intensity Forward Current(mA) Ambient Temperature TA ()℃ -40 -20 0 Ambient Temperature TA ()℃ 400 0 20 8060 100 0 0.5 1.0 1.5 60 80 1004020 IF-Forward Current (mA)Forward Voltage(V) 0 20 100 2.0 2.5 1.51.3 1.4 1.71.6 0 0.5 1.0 1.5 60 80 100 100 2.0 2.5