50C02SP

50C02SP SANYO | Alldatasheet

Document overview

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Technical content

Features

• Large current capacitance.
• Low collector-to-emitter saturation voltage (resistance). R CE (sat) typ=175mΩ [IC =0.5A, IB =50mA].
• Ultrasmall package facilitates miniaturization in end products.
• Small ON-resistance (Ron). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 60 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 500 mA Collector Current (Pulse) I CP 1.0 A Collector Dissipation P C 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0 100 nA Emitter Cutoff Current I EBO VEB =4V, IC =0 100 nA DC Current Gain h FE VCE =2V, IC =10mA 300 800 Gain-Bandwidth Product f T VCE =10V, IC =50mA 500 MHz Marking : YN Continued on next page. NPN Epitaxial Planar Silicon Transistor 50C02SP

52703 TS IM TA-100121

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit : mm 2033A [50C02SP] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 1 : Emitter 2 : Collector 3 : Base SANYO : SPA 4.0 0.4 0.5 0.4 0.6 15.0 3.0 1.8 123 2.2 0.4 1.31.3 3.0 3.8nom 0.7 0.7

No.7518-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Output Capacitance Cob V CB =10V, f=1MHz 2.8 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =100mA, IB=10mA 50 100 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =100mA, IB=10mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0 5V Turn-ON Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 340 ns Fall Time t f See specified Test Circuit. 55 ns Switching Time Test Circuit VR R B VCC =25VVBE = --5V 50Ω INPUT OUTPUT R L 220µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =20IB1 = --20IB2 =200mA hFE -- IC IT05108 IC -- VCE IT05106 IC -- VBE IT05107Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE 1.0 10 100 1000325 7 3 25 7 3 25 7 1000 100 350 400 300 200 250 500 450 200 150 100 200 300 600 500 400 100 Ta=75 --25 V CE =2V V CE =2V IB =0 200µA 600µA 1mA 2mA 3mA 5mA 7mA 8mA 30mA 20mA 15mA 10mA Ta=75°C 25°C --25°C IT05411 1.0 23 5 10 10072 3 5 7 100023 5 7 100 --25 °C25°C Ta=75 IC / IB =10 VCE (sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV

No.7518-3/4 PC -- Ta Collector Dissipation, PC -- mW Ambient Temperature, Ta -- °C 20 40 60 80 100 120 400 300 200 100 500 140 160 IT05117 fT -- IC IT05113 Cob -- VCB IT05112 VCE (sat) -- IC IT05110 Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- mA Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz IT05111 VBE (sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- V 1.0 53 100 1000 100010027 5 327 5 32710 27 35 2 7 3510 1001.0 1.0 1.0 23 535 7 1027 2 3 5 7 100 1000 1.0 0.1 75°C Ta= --25°C 25°C IC / IB =20 f=1MHz V CE =10V IT05110 1000 100 1.0 23 5 10 1007 23 5 7 23 5 7 1000 IC / IB =50 --25 25°C Ta=75 VCE (sat) -- IC IT05109Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV 1.0 23 5 10 10072 3 5 7 100023 5 7 100 --25 25°C Ta=75 IC / IB =20 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06092 1.0 100 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB

No.7518-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. PS