1N5719 AVAGO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Low Harmonic Distortion
  • Large Dynamic Range
  • Low Series Resistance
  • Low Capacitance 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) CATHODE DIMENSIONS IN MILLIMETERS AND (INCHES). 4.32 (.170) 3.81 (.150)

The Avago Outline 15 package has a glass hermetic seal with dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all PIN diodes. The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch (1.6 mm) from the glass body. Typical package inductance and ca - pacitance are 2.5 nH and 0.13 pF, respectively. Marking is by digital coding with a cathode band. General Purpose Diodes Electrical Specifications at TA = 25°C Maximum Minimum Maximum Part Total Breakdown Residual Series Effective Carrier Reverse Recovery Number Capacitance Voltage Resistance Lifetime Time 5082- CT (pF) VBR (V) RS (Ω) τ (ns) trr (ns) General Purpose Switching and Attenuating 3001 0.25 200 1.0 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1N5719 0.3** 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) Band Switching Test VR = 50 V VR = VBR IF =100 mA IF = 50 mA IF = 20 mA Conditions *VR = 20 V Measure *IF = 20 mA IR = 250 mA VR = 10 V VR = 100 V IR ≤ 10 µA IF = 10 mA *IF = 10 mA 90% Recovery f = 1 MHz f = 100 MHz *IR = 6 mA Notes: Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W. RF Current Controlled Resistor Diodes Electrical Specifications at TA = 25°C Max. Max. High Low Difference Effective Min. Residual Max. Resistance Resistance in Carrier Breakdown Series Total Limit, RH (Ω) Limit, RL (Ω) Resistance Part Lifetime Voltage Resistance Capacitance vs. Bias Number τ (ns) VBR (V) RS (Ω) CT (pF) Min. Max. Min. Max. Slope, Dc 5082-3080 1300 (typ.) 100 2.5 0.4 1000 8** 1N5767* 1300 (typ.) 100 2.5 0.4 1000 8 5082-3379 1300 (typ.) 50 0.4 8 5082-3081 2500 (typ.) 100 3.5 0.4 1500 8 Test IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V IF = 0.01 mA IF = 1.0 mA Batch Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz IF = 20 mA Matched at IR ≤ 10 µA f = 100 MHz IF = 0.01 mA and 1.0 mA f = 100 MHz *The 1N5767 has the additional specifications: τ = 1.0 msec minimum IR = 1 µA maximum at VR = 50 V VF = 1 V maximum at IF = 100 mA.

would be marked: 1Nx xx xxx xx YWW YWW where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part num- ber. Y is the last digit of the calendar year. WW is the work week of manufac- ture. Examples of diodes manufactured during workweek 45 of 1999: 1N5712 5082-3080 would be marked: 1N5 30 712 80 945 945 Part Number Ordering Information Part Number No. of devices Container 5082-3xxx#T25/1N57xx#T25 2500 Tape & Reel 5082-3xxx#T50/ 1N57xx#T50 5000 Tape & Reel 5082-3xxx/ 1N57xx 100 Antistatic bag For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-3339EN AV02-0477EN - June 6, 2007