5082-1000 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
The 5082-1000 series of diodes feature planar silicon epitaxial construction to provide high conductance, low capacitance, and nanosecond turn-on and turn-off. Process control of the diode manufacturing enables specification of effective minority carrier lifetime. Turn-on time and voltage overshoot are minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications such as core drivers, pulse generators, input gates or wherever high conductance without loss of speed is required. Maximum Ratings at TCASE=25°C WIV — Working Inverse Voltage 1006 40 Volts 1001/1002 30 Volts 1003/1004 20 Volts IF (Surge) — Forward Current Surge, 1.0 Second Duration 0.75 Amp IF (Surge) — Forward Current Surge, 1.0 Microsecond Duration 7.50 Amp PDISS — Power Dissipation'1! 500 mW TA — Operating Temperature Range -65°C to +175°C TSTG — Storage Temperature Range -65° C to +200° C Operation of these devices within the above temperature ratings will assure a device Mean Time Between Failure (MTBF) of approximately 1 x 10^ hours. Electrical Specifications at TA=25°c HIGH CONDUCTANCE DIODES 5082-1001 (IN 4456) 5082-1002 5082-1003 5082-1004 50821006 t 25.4(1.001 WIN. 2.72 (0.107) ZlSfiSSig) "pn CATHODE 25.4 (1.00) MIN. 0.56(0022} OUTLINE 11 WMENSIONS IN MILLIMETERS AND (INCHES) Part Number 5082- 1001 (1N4456) 1002 1003 1004 1006 Test Conditions Minimum Breakdown Voltage VBB (V) lfi=10^A Minimum Forward Current If(mA) 180 300 100 200 150 Vp*t0V I2J Minimum Forward Current lF{mA) 500 800 300 600 500 Vp=1.4V 12} Maximum Reverse Leakage. Currant In (nA) 200 200 200 200 200 13) Maximum Reverie Leakage Current InCuA) 200 200 200 200 200 150° C'31 (Maximum Total Capacitance Co (PF) 1.5 3.0 2,0 4,0 1.1 VR=OV, f=1.Q MHz Maximum Reverse Recovery Time trr(ns) 1.5 2.0 1.5 2.0 1.5 (Figure 9) Maximum Turn-On Time ton (ns) 2.5 2.5 2.0 2.0 ( Figure 10 1 NOTES: 1. Mounted on a printed circuit board in still air. 2. Measured at a repetition rate not to exceed the power dissipation. 3. Vn=35V for 1006; VR=30V for 1001, 1002; VR=20V for 1003, 1004. 4. Inductance measured at the edge of the glass package seal is typically 4.0 nH for all devices. 5. Rectification Efficiency is typically 65% for all devices fli *^«I