50162801 SENSORTECHNICS | Alldatasheet
Document overview
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Technical content
Features
– NUV light detection from 350 to 900 nm (peak efficiency at 420 nm) – Afterpulsing probability <4 % – Dark Count Rate <100 kHz/mm2 – Superior breakdown voltage uniformity – Excellent temperature stability – Detection of extremely faint light – Very high gain (106) – Extremely good timing performance – Insensitive to magnetic fields – Not damaged by ambient light – Small and compact – Nickel free Chip Scale Package (CSP)
Applications
– High energy physics – Medical imaging – Nuclear medicine – Homeland security – Analytical instruments Certificates – RoHS compliant (2011/65/EU) Silicon photomultipliers (SiPMs) from First Sensor are innovative solid-state silicon detectors with single photon sensitivity. SiPMs are a valid alternative to photomultiplier tubes. The main benefits of these detectors are high gain, extremely good timing performance and low operating voltage. They are insensitive to magnetic field and have a high integration level. The detectors are optimized for Near Ultraviolet (NUV) light detection.
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Parameter Product SiPM-NUV1S-SMD SiPM-NUV1C-SMD SiPM-NUV3S-SMD SiPM-NUV4S-SMD Effective active area (1×1) mm2 1.13 mm2 (3×3) mm2 (4×4) mm2 Cell count 625 673 5520 9340 Cell size (pitch) 40 μm × 40 μm Cell fill-factor 60 % Quenching resistance 800 kΩ Cell capacitance 90 fF Recharge time constant 70 ns Spectral response range 350 ... 900 nm Peak sensitivity wavelength 420 nm Photon detection efficiency (2) 43 % Breakdown voltage (BV) typ. 26 V, min. 24 V, max. 28 V BV standard deviation (3) 50 mV Recommended overvoltage range (OV) (4) min: 2 V, max: 6 V Dark count rate (5) <50 kHz/mm2 @ 2 V OV, <100 kHz/mm2 @ 6 V OV Gain (6) 3.6×106 Breakdown voltage temperature coefficient 26 mV/°C Refractive index of epoxy resin (7) 1.5115 (@ 589 nm, 23 °C, uncured) Specification notes (1) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. (2) Measured at peak sensitivity wavelength (λ=λp) at +6 V overvoltage (not including afterpulse and crosstalk). (3) BV of SiPMs belonging to a same production lot are within 200 mV (±2σ) from mean BV value. (4) Operating voltage (SiPM bias) is BV+OV, to be applied in reverse mode, i.e. V AK <0 (see “Pins Function” section). (5) 0.5 p.e. threshold level at 20 °C (primary dark count rate; not including afterpulse). (6) Measured at 20 °C at +6 V overvoltage. (7) To be used as a guide only, not as a specification. Reported data is not guaranteed. Absolute maximum ratings (1) Typical characteristics Parameter Min. Max. Unit Operating temperature (TA) -25 +40 °C Storage temperature (TS) -40 +60 °C Lead temperature (solder) 5 s (TSol) +250 °C Voltage working range (MVW) Breakdown voltage +6 V
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Typical reverse IV curve (SiPM-NUV1S-SMD) Typical forward IV curve (SiPM-NUV1S-SMD) Breakdown voltage temperature dependence Dark count rate as fct of overvoltage and temperature Device characteristics (8, 9) Dark current [A] Reverse bias [V] Forward bias [V] Current [mA] Temperature [°C] Breakdown voltage [V] Overvoltage [V] Dark count rate [cps/mm2]
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Gain as fct of overvoltage Device characteristics (cont.) (8, 9) Overvoltage [V] Gain [x 106] Overvoltage [V] Gain variation [1/°C] Temperature dependence of poly-silicon quenching resistance Photo detection efficiency (PDE) as fct of wavelength (crosstalk and afterpulse not included) Temperature [°C] Quenching resistance [kΩ] PDE Wavelength [nm] Relative variation of gain with temperature as fct of overvoltage
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Delayed correlated noise probability (delayed crosstalk and afterpulse) Pulse shape at different overvoltage (recharge time constant is 70 ns) Overvoltage [V] Delayed correlated noise probability Time [ns] Normalized amplitude [a.u.] Specification notes (8) T A = 20 °C (9) Refer to the data accompanying each shipped product for more detailed information. SiPMNUV1SSMD Device characteristics (cont.) (8, 9)
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Physical dimensions SiPM-NUV1S-SMD SiPM-NUV1C-SMD SiPM-NUV3S-SMD Material: Black FR4, transparent epoxy layer dimensions in mm, mechanical tolerance ±0.15 mm unless otherwise noted
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Physical dimensions Electrical connection SiPM-NUV4S-SMD Pin Name Function
1 K Cathode
2 A Anode
Material: Black FR4, transparent epoxy layer dimensions in mm, mechanical tolerance ±0.15 mm unless otherwise noted
Near Ultraviolet (NUV) SiPMs Subject to change without notice www.first-sensor.com contact@first-sensor.com Reflow soldering profile (10)
Ordering information
(10) The reflow soldering must be performed within 24 hours once the device has been removed from package and stored in a 25 °C and <60 % RH ambient conditions. The reflow soldering profile is recommended for Pb-free solder such as Tin-Silver-Copper (SAC). The peak temperature must not exceed 250 °C. Order # Series Range Active area Housing 50162801 SiPM- NUV [Near Ultraviolet] 1S (1x1) mm2 square -SMD [Plastic chip scale package (CSP)] 50162802 1C Ø 1.2 mm circular 50162803 3S (3x3) mm2 square 50162804 4S (4x4) mm2 square Time [s] Temperature (°C)