2N4401 KOOCHIN | Alldatasheet
Document overview
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Technical content
2N4401 TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO I C=100μA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO I E=100μA, IC=0 6 V Collector cut-off current ICBO V CB=35V, IE=0 0.1 μA Emitter cut-off current IEBO V EB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 0.1mA 20 hFE(2) VCE=1V, IC=1mA 40 hFE(3) VCE=1V, IC= 10mA 80 hFE(4) VCE=1V, IC=150mA 100 300 DC current gain hFE(5) VCE=2V, IC= 500mA 40 VCE(sat)1 I C=150 mA, IB=15mA 0.4 V Collector-emitter saturation voltage VCE(sat)2 I C=500 mA, IB=50mA 0.75 V VBE(sat)1 I C=150 mA, IB=15mA 0.95 V Base-emitter saturation voltage VBE(sat)2 I C=500 mA, IB=50mA 1.2 V Transition frequency f T VCE= 10V, IC= 20mA, f=100MHz
250 MHz
VCB=10V, IE= 0, f=100KHz 6.5 pF Delay time td 15 nS Rise time tr VCC=30V, VBE(OFF)=2V IC=150mA, IB1=15mA 20 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1=-IB2= 15mA 30 nS 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to +150 ℃ RӨJA Thermal Resistance, junction to Ambient 357 ℃/mW TO-92 1.EMILTTER 2.BASE 3. COLLECTOR
Typical Characteristics 2N4401