TLE4276 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Output voltage tolerance£– 4%
  • Low-drop voltage
  • Inhibit input
  • Very low current consumption
  • Short-circuit-proof
  • Reverse polarity proof
  • Suitable for use in automotive electronics SMD = Surface Mounted Device t New type Type Ordering Code Package TLE 4276 V50 Q67000-A9262 P-TO220-5-3 TLE 4276 V85 Q67000-A9263 P-TO220-5-3 TLE 4276 V10 Q67000-A9264 P-TO220-5-3 TLE 4276 G V50 Q67006-A9266 P-TO220-5-122 TLE 4276 G V85 Q67006-A9268 P-TO220-5-122 TLE 4276 G V10 Q67006-A9270 P-TO220-5-122 TLE 4276 S V50 Q67000-A9267 P-TO220-5-43 TLE 4276 S V85 Q67000-A9269 P-TO220-5-43 TLE 4276 S V10 Q67000-A9271 P-TO220-5-43 TLE 4276 V Q67000-A9265 P-TO220-5-3 TLE 4276 SV Q67000-A9273 P-TO220-5-43 TLE 4276 GV Q67006-A9272 P-TO220-5-122 t TLE 4276 D V50 Q67006-A9358 P-TO252-5-1 t TLE 4276 DV Q67006-A9361 P-TO252-5-1 P-TO220-5-3 P-TO220-5-43 P-TO220-5-122 P-TO252-5-1 (D-PAK)

Semiconductor Group 2 1998-11-01 Functional Description The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85), 10 V (V10) and adjustable voltage (V). The maximum output current is 400 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10mA. The IC is short- circuit-proof and incorporates temperature protection that disables it at over-tempera- ture. Dimensioning Information on External Components The input capacitor C I is necessary for compensating line influences. Using a resistor of approx. 1W in series with C I, the oscillating of input inductivity and input capacitance can be damped. The output capacitor C Q is necessary for the stability of the regulation circuit. Stability is guaranteed at values C Q ‡ 22 mF and an ESR of£ 3 W within the operating temperature range. Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against:

  • Overload
  • Overtemperature
  • Reverse polarity

Semiconductor Group 3 1998-11-01 Pin Configuration (top view) Figure 1 Pin Definitions and Functions Pin No. Symbol Function 1 I Input; block to ground directly at the IC with a ceramic capacitor. 2I N H Inhibit; low-active input 3G N D Ground 4N . C . VA Not connected for V50, V85, V10 Voltage Adjust Input; only for adjustable output from external voltage divider. 5Q Output; block to ground with a‡ 22 mF capacitor. QI GND N.C.INH 1 5 AEP02041 (VA) GNDI INH (VA) AEP02042 N.C. Q 1 5 1 5 GND INH I AEP02043 N.C. Q AEP02560 INH I N.C. Q (VA) GND P-TO220-5-3 P-TO220-5-43 P-TO252-5-1P-TO220-5-122

Semiconductor Group 4 1998-11-01 Figure 2 Block Diagram I AEB02044 GND Bandgap Reference Control Amplifier Sensor Temperature Buffer Saturation Control and Protection Circuit VA INH ) For fixed Voltage Regulator only For adjustable Voltage Regulator only )

Semiconductor Group 5 1998-11-01 Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Absolute Maximum Ratings Tj= – 40 to 150°C Parameter Symbol Limit Values Unit Test Condition min. max. Voltage Regulator Input Voltage VI –4 2 4 5 V – Current II –– – Internally limited Inhibit Voltage VINH –4 2 4 5 V – Voltage Adjust Input Voltage VVA –0 . 3 1 0 V – Output Voltage VQ –1 . 0 4 0 V – Current IQ – – – Internally limited Ground Current IGND –1 0 0 m A – Temperature Junction temperature Tj –1 5 0 °C– Storage temperature Tstg –5 0 1 5 0 °C–

Semiconductor Group 6 1998-11-01 Operating Range Parameter Symbol Limit Values Unit Remarks min. max. Input voltage VI VQ +0 . 5 4 0 V – Junction temperature Tj –4 0 1 5 0 °C– Thermal Resistance Junction ambient Rthja – 65 K/W TO220 Junction ambient Rthja – 70 K/W TO252 1), TO263 Junction case Rthjc –4K / W – 1) Soldered in, minimal footprint Characteristics VI =1 3 . 5V ; –4 0°C< Tj<1 5 0°C (unless otherwise specified) Parameter Symbol Limit Values Unit Measuring Condition Measuring Circuitmin. typ. max. Output voltageVQ 4.8 5 5.2 V V50-Version 5m A< IQ < 400 mA 6V< VI <4 0V Output voltageVQ 8.16 8.5 8.84 V V85-Version 5m A< IQ < 400 mA

9.5 V <VI <4 0V

Output voltageVQ 9.6 10 10.4 V V10-Version 5m A< IQ < 400 mA

11 V <VI <4 0V

DVQ – 4 4 % V-Version VV.A.=2 . 5V Output current limitation1) IQ 400 600 – mA – 1 Current consumption; Iq = II – IQ Iq –01 0 mA VINH =0V ; Tj £ 100 °C Current consumption; Iq = II – IQ Iq –1 0 0 2 2 0 mA IQ =1m A 1

Semiconductor Group 7 1998-11-01 Current consumption; Iq = II – IQ Iq Iq mA mA IQ =2 5 0m A IQ =4 0 0m A Drop voltage1) VDR –2 5 0 5 0 0 m V IQ =2 5 0m A VDR = VI – VQ Load regulation DVQ –53 5 m V IQ = 5 mA to 400 mA Line regulation DVQ – 1 02 5m V DVl = 12 V to 32V IQ =5m A Power supply ripple rejection PSRR –6 0 –d B fr = 100 Hz; Vr =0 . 5VSS Temperature output voltage drift dVQ dT 1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. Inhibit Inhibit on voltage VINH –23 . 5 V VQ ‡ 4.9 V 1 Inhibit off voltage VINH 0.5 1.7 – V VQ £ 0.1 V 1 Input currentIINH 51 0 2 0 mA VINH =5V 1 Characteristics (cont’d) VI =1 3 . 5V ; –4 0°C< Tj<1 5 0°C (unless otherwise specified) Parameter Symbol Limit Values Unit Measuring Condition Measuring Circuitmin. typ. max.

Semiconductor Group 9 1998-11-01 TLE 4276 Drop Voltage V DR versus Output Current IQ Current Consumption Iq versus Output Current IQ (high load) Max. Output Current IQ versus Input Voltage V I Current Consumption Iq versus Output Current IQ (low load) 0 100 400 600 200 V dr mV 400200 IQ mA AED01962 jT = 25 C Vdr= QNOM-0.1 VV jT = 125 C 300 100 300 0 200 mA 600400 IQ mA AED01964 V I qI = 13.5 V T = 25 Cj 100 300 2001 0 mA 800 QI = 25 CT j 50V30 40 V I AED01963 200 400 600 = 0 VV Q 01 0 2 0 mA40 60 QI 0.1 0.2 0.3 mA 0.6 0.4 Iq AED01965 T V = 25 C = 13.5 V I j Typical Performance Characteristics (V50, V85 and V10):

Semiconductor Group 10 1998-11-01 TLE 4276 Output Voltage V Q versus Temperature Tj Low Voltage Behavior Current Consumption Iq versus Input Voltage V I High Voltage Behavior 4.90 4.80 4.70 40-40 0 4.60 5.00 V 5.20 5.10 Q

160 C80 120

V I = 13.5 V V 40 2 V Q 1068 V I AED01968 V V V Q V I V Q= = 20 = 25 C R L jT W mA AED01967 qI 10 20 30 V R L = 20 W V I T j = 25 C 1.5 0.5 1.0 2.0 2.5 3.0 3.5 mA I AED01969 V I 50250-25-50 V I = 25 C = 3.3 k j R T L W Typical Performance Characteristics for V50:

Semiconductor Group 11 1998-11-01 TLE 4276 Output Voltage V Q versus Temperature Tj Low Voltage Behavior Current Consumption Iq versus Input Voltage V I High Voltage Behavior 7.5 8.0 0-40 40 9.0 8.5 QV = 13.5 VV I V

12080 C160

R T QV QV I = V V V1612 20 V I = 25 C = 34L j W AED01972 QV mA AED01971 qI 10 20 30 V V I W = 25 C L T R j = 20 1.5 1.0 0.5 -50 -25 mA 3.5 3.0 2.5 2.0 I I T R j L = 25 C W= 8.5 k V25 50 V I AED01973 Typical Performance Characteristics for V85:

Semiconductor Group 12 1998-11-01 TLE 4276 Output Voltage V Q versus Temperature Tj Low Voltage Behavior Current Consumption Iq versus Input Voltage V I High Voltage Behavior 9.0 9.5 0-40 40 10.5 10.0 QV = 13.5 VV I V R T QV QV I = V V V1612 20 V I = 25 C = 34L j W AED01976 QV mA AED01975 qI 10 20 30 V R L = 20W V I T j = 25 C 1.5 1.0 0.5 -50 -25 mA 3.5 3.0 2.5 2.0 I I T R j L = 25 C W= 10 k V25 50 V I AED01977 Typical Performance Characteristics for V10:

Semiconductor Group 13 1998-11-01 Package Outlines P-TO220-5-3 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mm

Semiconductor Group 14 1998-11-01 P-TO220-5-43 (Plastic Transistor Single Outline)

Semiconductor Group 15 1998-11-01 P-TO220-5-122 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device

Semiconductor Group 16 1998-11-01 P-TO252-5-1 (Plastic Transistor Single Outline) GPT09161 5.4±0.1 -0.106.5+0.15 A ±0.59.9 6.22-0.2 1±0.1 ±0.150.8 0.15 max ±0.1per side 5x0.6 1.14 4.56 +0.08 -0.040.9 2.3-0.10 +0.05 B 0.51 min ±0.11 +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 All metal surfaces tin plated, except area of cut. (4.17) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device