SGT40N60NPFDPN SILAN | Alldatasheet

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Technical content

MICROELECTRONICS CO.,L TD Rev.: 1.3 http : //www.silan.com.cn Page of 40A, 600V FIELD STOP IGBT

DESCRIPTION

SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

FEATURES

40A, 600V, V CE(sat) (typ.) =1.8V@I C =40A Low conduction loss Fast switching H igh input impedance NOMENCLATURE

ORDERING INFORMATION

Part No. Package Marking Hazardous Substance Control Packing SGT40N60NPFDPN TO 40N60NPFD Pb free Tube ABSOLUTE MAXIMUM RAT INGS T C = 25° C unless otherwise noted Parameter Symbol Ratings Units Collector to Emitter Voltage V CE 600 V Gate to Emitter Voltage V GE ±20 V Collector Current T C =25°C I C A T C =100°C Pulsed Collector Current I CM 120 A Maximum Power Dissipation (T C =25 P D 290 W 2.32 C Operating Junction Temperature T J C Storage Temperature Range T stg C

MICROELECTRONICS CO.,L TD Rev.: 1.3 http : //www.silan.com.cn Page of THERMAL CHARACTERIST ICS Parameter Symbol Ratings Units Thermal Resistance, Junction to Case (IGBT) R θJC 0.24 C/W Thermal Resistance, Junction to Case ( FRD) R θJC 1.4 C/W Thermal Resistance, Junction to Ambient R θJA 35.5 C/W ELECTRICAL CHARACTER ISTICS OF IGBT T C = 25°C unless otherwise noted Parameter Symbol Test conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage BV CE V GE =0V,I C =250uA 600 V C E Leakage Current I CES V CE =600V,V GE =0V 200 uA G E Leakage Current I GES V GE =20V,V CE =0V nA G E Threshold Voltage V GE(th) I C =250uA,V CE GE 4.0 5.0 6.5 V Collector to Emitter Saturation Voltage V CE(sat) I C =40A,V GE =15V 1.8 V I C =40A,V GE =15V T C =125 C 2.1 V Input Capacitance C ies V CE =30V V GE =0V f=1MHz 1850 pF Output Capacitance C oes 180 Reverse Transfer Capacitance C res Turn On Delay Time T d(on) V CE =400V I C =40A R g =10Ω V GE =15V Inductive Load, ns Rise Time T r Turn Off Delay Time T d(off) 110 Fall Time T f 105 Turn On Switching Loss E on 1.87 mJ Turn Off Switching Loss E off 0.68 Total Switching Loss E st 2.55 Total Gate Charge Q g V CE = 300V, I C =20A, V GE = 15V 100 nC Gate to Emitter Charge Q ge Gate to Collector Charge Q gc ELECTRICAL CHARACTER ISTICS OF FRD T C = 25°C unless otherwise noted Parameter Symbol Test conditions Min. Typ. Max. Units Diode Forward Voltage V fm I F = 20A T C =25 C 1.9 2.6 V I F = 20A T C =125 C 1.5 Diode Reverse Recovery Time T rr I ES =20A, dI ES /dt=200A/μs ns Diode Reverse Recovery Charge Q rr I ES =20A, dI ES /dt=200A/μs nC

MICROELECTRONICS CO.,L TD Rev.: 1.3 http : //www.silan.com.cn Page of TYPICAL CHARACTERIST ICS CURVE Figure Typical output characteristics 120 Collector Emitter voltage V CE V Collector Emitter voltage V CE V Figure Typical saturation voltage characteristic 100 T C V V V V V GE V Figure Typical output characteristics 120 Collector Emitter voltage V CE V 100 T C 125 V GE V V V V V 120 100 T C T C 125 Emitter in common V GE V Gate Emitter voltage V GE V Figure Transmission characteristic 120 100 T C 125 T C Emitter in common V GE V Figure Saturation voltage vs V GE Gate Emitter voltage V GE V Emitter in common T C A A I C A Figure Saturation voltage vs V GE Gate Emitter voltage V GE V Emitter in common T C 125 A A I C A

MICROELECTRONICS CO.,L TD Rev.: 1.3 http : //www.silan.com.cn Page of TYPICAL CHARACTERIST ICS CURVE (CONTINUED)

MICROELECTRONICS CO.,L TD Rev.: 1.3 http : //www.silan.com.cn Page of TYPICAL CHARACTERIST ICS CURVE (CONTINUED) P e a k P o w e r I m p e d a n c e C W C o l l e c t o r C u r r e n t I C A PACKAGE OUTLINE TO Unit:mm

MICROELECTRONICS CO.,L TD Rev.: 1.3 http : //www.silan.com.cn Page of D isclaimer Part No.: SGT40N60NPFDPN Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.3 Revision History: Modify the Max Value of Junction Temperature Rev.: 1.2 Revision History: Modify the electrical characteristic of IGBT Rev.: 1.1 Revision History: Add pin No. Modify the package outline of TO Rev.: 1.0 Revision History: First release Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!