SD241 NJSEMI | Alldatasheet

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<3zm.i-Conau.cioi Lp , One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 40CDQ & 6OCDQ SERIES AND SD241 4O and SO Amp Dual Schottky Center Tap Rectifiers Major Ratings and Characteristics Characteristics IQ Rectangular Waveform Sinusoidal Waveform IFSM @50Hz @60Hz |2t @ 50 Hz @60Hz |2,/t~ VRWM Ct®-5V Tj 40CDQ SD241 380 400 730 665 10,325 20-45 60CDQ uiZ5_ 500 1140 1040 16,130 20-45 1400 -65 to 175 Units A A A2S A2,/I V pP Description/Features The 40COQ and 60CDQ Dual Schottky Rectifier Series and SD241 employ the "830" process which results In a very low ratio of reverie leakage current to junction temperature. In addition to offering Im- provements In reliability and performance, they ere rugged device* with a guaranteed repetitive peak reverse voltage capability, and ex- cellent ability to withstand reverie energy transients, They can be used I both existing and new designs, 176°CTj operation 100% reverse energy tested (each (unction) 400A and 500A surge, 60 Hi, one cycle (per (unction) Extremely low reverse leakage: 10 mA <5> 25°C No voltage derating of VR^UM over temperature range A guaranteed repetitive peak reverse voltege capability for short pulses which Is 20% above Vp^^ High power supply reliability Minimizes problem of thermel runeway TO-204AE (Modified TO-3) CMS Style available (60CDQ series) Can be supplied to meet strlpgent military, aerospace ond other high-reliability requirements. ' H I nMt H " t— * OLA—JL_ ID.IE<0.40)MIH OH !i!i . nr TOD PLACES I™. TOO PLACES COMMON CAT«OOE~- ANODE I' Oil CGHMOM 0 hi— CATHODE ' HI i S 050 d MAX.- &-s >•; t I7.UII.J.1EJI tat (5 rat 30.40 3IW <!.»] 1.1171 ffiTl . i "1° jjjl' SJllOIB!) tMEA . 1U7(04401t SEA Conforms to JEDEC Outline TO-204AA (TO-3) "•Conforms to JEDEC Outline TO 204AE (Modified TO-3) All Dimensions In Millimeters and (Inches) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

VOLTAGE RATINGS PER JUNCTION Part Numbers 40CDQ020 40COQ030 40COQ036 40CDQ040 40CDQ045 S0241 60CDQ020 60CDQ030 60CDQ035 COCDQ040

  • 60COQ045 - VRWM ~ Max- Working Peak _ Reverie Voltage (V) © 36© Repetitive Peak Reverse Voltage I V)© (t« * 200 ns Max.) 42© VR - Max. Direct Reverse Voltage (V)© ELECTRICAL SPECIFICATIONS IQ Max, averagt output current from center tap circuit IpSIV) Max. peak one cycle, non- repetitive surge current, per junction I2t Max. I2t for fuilng, per Junction I2t Max. 1't for individual function fusing, per Junction |2\\/T Max. I2 \\A"for Individual © junction fusing, per junction VpM Max. peak forward voltaga per junction IRM Max. peak reverse current, per junction IBBM- Max. repetitive peak MHM' reverie current C, Max. capacitance, per junction dv/dt Mex. rate of application of reverse voltage, per junction 40CDQ SD241 ' 64 .380 400 45E 478 730 665 1030 940 ' 10,326 0.70 0.91 0.74 60CDQ 475 BOO 670 606 1140 1040 1610 1470 16,130 0.82 1.09 0.92 . 20 2.0 1400 1000 Units A A2, A2, A*V7 V mA A PF V/Vs Condition! 180° conduction, rectangular waveform, TQ •> -40 to 143°C for 40CDQ, Tc - -40 to 1 20°C for 60CDQ. 180° conduction, sinusoidal waveform, TC « -40 to 141 °C for 40CDQ, Tc - -40 to 1 16°C for 60CDQ. or 6 m, rac«an,u,ar pu,,a, ™S*SS32S?£*

60 Hz half cycle sine wave VRWM applied,

or 6 ms rectangular pulse. 50 Hz With VRWM - 0 following (urge. "so Hz Initial Tj-175uC. t-IOmj. Rated VRWM following surge, t- 8.3ms. initial Tj-17S°C. t-10ms. VRWM following surge *• 0, t- 8.3 mi. Initial Tj=176°C. .t-0.1 tolOmj, Tj- 17B°C, VRWM = 0 following surge. IFM - 20A peak for 40CDQ, IFM - 30A Tj = 26°C r«Kfor60CDQ«ndSD241 FM Tj - 2G°C R,nd IF(AV) (40A peak for 40CDQ, 60A -r .-.cor- peak for UUUUU and 81)241 ) Tj-175 c IBOO rectangular wave. T, - 2B°C Tj-126"C RM rateaVRWM Tc - 2S°C, L, > 2 pi rectangular pulse, f - 1 kHz. © see fig. 11 for ten circuit. Tc = 25°C, VR - 6 Vdc (Test signal In the range of 100 kHz to 1 MHz) TC=26°C,VRM- rated VHWM THERMAL-MECHANICAL SPECIFICATIONS Tj Max. operating junction temperature range T|tg Max. storage temperature range RthJC Max. thermal resistance. Junction-to-case, DC operation Max. composite thermal resistance, junctfon-to-ceie, DC operation R,hCs Thermal resistance, casa-to-sink wt Approximate weight Cite Style -55 to 176 -55 to 176 1.4 0.7 0,2 12.6 (0.46) - TO-204AA TOatMAE (TO-3) (Modified TO-3) oo

  • <>C deg, C/W g (02.) Based on power dissipated in one junction, both Junctions operating. Bated on power dissipated In both junctions. Mounting surface Hot, smooth and greaied. Terminals 1 end 2: Anodes 1 and 2 Case: Common Cathodes © Tc - -55 to 172°C, 180° conduction © For SD241 rated © TC *• 0 to 172°C, 180° conduction © Tc - -65 to 182°C. © I2t for time t^- I2 V7 • \\/t]|. © For ten circuit refer to Fig. 11. 35V @ Tj - 150°C