40346 NJSEMI | Alldatasheet

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J.EIIE.U , li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3439; 2N3440; 2N4063; 2N4064; 40385; 40346, V1, V2; 40390; 40412, V1, V2 High-Voltage Silicon N-P-N Transistors 'COLLECTOR TO BASE VOLTAGE VCBO COLLECTOR TO EMITTER VOLTAGE: With external base to emitter resistance (RBE| - 1,0000 VCER(suS)

  • 10,000 fl VCER(sus) 'EBO 2NJ439 2N3440 40346 2N4063 2N4064 40348V1 40385 40390 40348 V2 450 300 With base open VCEO'SU5' 'EMITTER-TO BASE VOLTAGE "CONTINUOUS COLLECTOR CURRENT . 'CONTINUOUS BASE CURRENT TRANSISTOR DISSIPATION: At case temperature up to 25°C At free-air temperatures up to 25°C At free-air temperatures up to 50°C .... At Iree-air temperatures above 25°C or 50°C —-
  • TEMPERATURE RANGE: Storage & Operating (Junction)
  • LEAD TEMPERATURE (During soldering): At distances > 1/32 in (0.79 mm) from seating plane for 10 s man .... *2N-S«rlii lypti in accordance with JEOEC reoiiunioo d«l» NOTE: PT vilin oMOW .1 TC - 26°C ind toad lempnauiie ol 255°C ui > 350 0.5 1 (403851 K2N3439I 250 0.5 10I2N3440) 1OI2N4064) 3.5(40390) 1 (2N3440) 175 0.5 10(40346) 10I40346V2) 4I40346V1) 1(40346) 40412 40412V1 40412V2 250 0.5 Derate linearly to 20O°C — -65 to 200 10(404121 W 10I40412V2) W 4I40412V1) W 1(40412) W __ _- «C 255 JEOEC TO 39 with FUngi 2N4M3.IN40a4,4034eV2, 40412V2 . for 2N4063 ind 2N»06« only NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

2N3439; 2N3440; 2N4063; 2N4064; 40385; 40346, V1, V2; 40390; 40412, V1, V2 ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25°C, Unless Otherwise Specified CHARACTERISTICS Collector-Cutoff Current: With base open With base reverse- biased: AtTc = 150°C With R = 10,000 ohms Emitter-Cutoff Current DC Forward-Current Transfer Ratio Collector-to-Emitter Sustaining Voltage: With base open Collector-to-Emitter Sustaining Voltage: With external base-to- emitter resistance RBE= 1,000 ohms RBE= 10,000 ohms Base-to- Emitter Voltage Base-to- Emitter Saturation Voltage IB = 4mA Collector-to-Emitter Saturation Voltage IB=1 mA Ig = 4 mA Small-Signal Forward- Current Transfer Ratio: f= 5 MHz Output Capacitance: VCB = 10V, f = 1 MHz Second-Breakdown Current Thermal Resistance: Junction-to-case Junction-to-free air SYMBOL 'CEO 'CEV "CER 'EBO "FE VCEO(sus) VCER(sus) vCER(sus) VBE VBE(sat) VCE(sat) hfe cob !S/b R0JC R0JFA VOLTAGE V dc VCE 100 200 300 200 300 450 150 200 100 200 VBE - 1.5 - 1,5 - 1.5 - 1.5 - 1.5 CURRENT mA dc LIMITS 2N3439 2N4063 40385 MIN. 350* MAX. 500 160 1.3 0.5 17.5 2N3440 2N4064 40390 MIN. 250" MAX. 500 160 1.3 0.5 17.5 40346 40346V1 40346V2 MIN. 175a MAX. 0.5 15 max. (40346) (40346V2) 45 max. (40346V 1) 40412 40412V1 4041 2V2 MIN. 250" MAX. 100 0.5 15 max. (40412) (4041 2 V2) 45 max. (4041 2V 1 UNITS mA mA MA V V V V pF mA °C/W *2N-Series typ« In accordance with JEDEC registration data

  • CAUTION: The sustaining voltages, V££Q(SUS) and VcgR(sus), MUST NOT be measured on a curve tracer