40250 CENTRAL | Alldatasheet

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MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEV 50 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 4.0 A Continuous Base Current I B 2.0 A Power Dissipation P D 29 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance JC 6.0 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=30V 1.0 mA ICBO V CB=30V, TC=150°C 5.0 mA IEBO V EB=5.0V 5.0 mA BVCBO I C=50mA 50 V BVCEV I C=50mA, VBE=1.5V 50 V BVCEO I C=100mA 40 V BVEBO I E=5.0mA 5.0 V VCE(SAT) I C=1.5A, IB=150mA 1.5 V VBE(ON) V CE=4.0V IC=1.5A 2.2 V hFE V CE=4.0V, IC=1.5A 25 100 40250 SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 40250 is a silicon NPN power transistor mounted in a hermetically sealed metal case, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE R0 (15-January 2019) www.centralsemi.com

TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER www.centralsemi.com R0 (15-January 2019)

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