400WP4KE SIPOWER | Alldatasheet

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Technical content

Features

+ RoHs compliant Maximum Ratings and Thermal + Halogen-Free Characteristics + Typical maximun temperature coefficient (TA =25°C unless otherwise noted) VpR=0.1%*Vgp@25 C Parameter Symbol Value Unit + Galss passivated chip junction in Do-41 Package Peak Pulse Power + 400w Peak Pulse capability at 10x 1000s waveform, Dissipation by 400 w 10x1000ps test waveform repetition rate (duty cycles):0.01% (Fig.1) (Note 1) + Fast response time: Steady State Power typically less than 1.0ps from 0 Volts to BV min Dissipation on inifinite heat 15 w ink at TL=75°C (Fig. 5) + Excellent champing capability sme (Fig. §) Peak Forward Surge + Low incremental resistance Current, 8.3ms “Typical IR less than 1HA above 13V Single Half Sine Wave tree 40 A + High Temperature soldering guaranteed: Unidirectional only (Note 2) 260°C/40 seconds /0.3757(9.5mm) lead length, Maximum Instantaneous Forward Vr 3.5/5.0 7 5 Ibs., (2.3kg) tension Voltage at 25A for ise + Plastic package has Underwriters Laboratory Flammability Unidirectional only (Note 3) classification 94V-O Operating Junction and T.Tsrs | -55to175| °C “Tin Leed-free plated StorageTemperature v,Tste Range Typical Thermal Applications Resistance Junction to Rthu °ClW TVS devices are ideal for the protection of I/O interfaces, Lead Vec_ bus and other vulnerable circuits used in telecom, Typical Thermal Resistance Junction to Rthua 100 °clW computer, industrial and consumer electronic applications. Ambient Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25°C per Fig. 2. 2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per minute maximum. 3. VF<3.5V for devices of VBR <200V and VF<5.0V for devices of VaR >201V. http://www.sipower-inc.com

Power Semiconductor Technology Transient Voltage Suppressor Ratings and Characteristic Curves (T =25°C unless otherwise noted) Figure 1 - Peak Pulse Power Rating Figure 2 - Pulse Derating Curve

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g 3 I~ é nN : * = 2 \\ 7 * Sot Hot be 5 * (ae TT IN | 0 c—1 4 0 100 i} 25 50 75 100 125 150 175 200 ‘Number of Cycles at 60 Hz Ti-Lead Temperature(°C) http://www.sipower-inc.com

©’ siPow iPower 400W P4KE Series Power Semiconductor Technology Transient Voltage Suppressor

Electrical Characteristics

Reverse Voltage Test Maximum Maximum . wees Noctter Stand off Vpr@ Ir Current Clamping Peak Pulse Maximum (Uni) (Bi) Voltage VR ) Ir Voltage Current lp Leakage (Volts) aa — (mA) Ve @ Ip (A) IR @VRuA) P4KE10AF | _P4KE10CAF 8.55 9.50 10.50 145 28.30 10 | PaKETIAF | P4KETICAF | 9.40 | 10.50 | 11.60 | 4 | 156 | 26.30 | | P4KE12AF | P4KE12CAF | 10.20 | 11.40 | 1260 | 4 | 167 | 2460 | | P4KE13AF | P4KE13CAF | 11.10 | 1240 | 13.70 | 4 | 18.2 | 2250 | P4KE24AF | P4KE24CAF | 20.50 | 22.80 | 25.20 | 4 | 332 | 1230 | | P4KE27AF | P4KE27CAF | 23.10 | 25.70 | 2840 | 4 | 375 | 10.90 | P4KESOAF | P4KESOCAF 25.60 28.50 31.50 1 414 9.90 1 PA4KES3AF_| P4KES3CAF | 28.20 31.40 34,70 1 45.7 9.00 1 | P4KE39AF | P4KE39CAF | 33.30 | 37.10 | 41.00 | 4 | 539 | 7.60 | 1 | P4KE43AF | P4KE43CAF | 36.80 | 40.90 | 45.20 | 4 | 593 | 6.90 | PAKEATAF | P4KE47CAF 40.20 44,70 49.40 1 64.8 6.30 1 | P4KE62AF | P4KE62CAF | 53.00 | 58.90 | 6510 | 4 | 850 | 480 | 1 | P4KE68AF | P4KEG8CAF | 58.10 | 64.60 | 7140 | 4 | 920 | 450 | | P4KETI0AF | P4KETI0CAF | 94.00 | 105.00 | 116.00 | 4 | 1520 | 2.70 | | P4KE160AF | P4KE160CAF | 136.00 | 152.00 | 168.00 | 4 | 2190 | 4.90 | | P4KE170AF | P4KE170CAF | 145.00 | 162.00 | 179.00 | 4 | 2340 | 1.80 | | P4KE250AF | P4KE250CAF | 214.00 | 237.00 | 263.00 | 41 | 3440 | 4.200 | | P4KESOOAF | P4KESOOCAF | 256.00 | 285.00 | 315.00 | 4 | 4140 | 4.00 | P4KE440AF_| P4KE440CAF | 376.00 418,00 | 462.00 602.0 0.68 1 | P4kE480AF | P4KE480CAF | 408.00 | 456.00 | 504.00 | 1 | 6580 | 0.61 | | P4KES10AF | P4KESIOCAF | 434,00 | 485.00 | 535.00 | 1 | 6980 | 0.57 | For bidirectional type having VR_ of 10 volts and less, the IR_ limit is double. For parts without A , the VgR_ is + 10% and Vc_ is 5% higher than with A parts http:/www.sipower-inc.com

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