30C02MH-TL-E

30C02MH-TL-E SANYO | Alldatasheet

Document overview

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Technical content

Features

• Large current capacity
• Low collector-to-emitter saturation voltage (resistance)) : R CE(sat) typ=330mΩ [IC=0.7A, IB=35mA]
• Ultrasmall package facilitates miniaturization in end products
• Small ON-resistance (Ron)
• Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 40 V Collector-to-Emitter Voltage V CEO 30 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 700 mA Collector Current (Pulse) I CP 1.4 A Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Package Dimensions unit : mm (typ) 7019A-004

71812 TKIM/60210EA TKIM TC-00002359/O2203 TSIM TA-100141

http://semicon.sanyo.com/en/network Product & Package Information

• Package : MCPH3
• JEITA, JEDEC : SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 TL 30C02MH-TL-E 30C02MH-TL-H CL LOT No. LOT No. NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifi er Applications

No.7364-2/6 500 400 300 700 600 200 200 100 300 400 200 800 700 600 500 100 500 1000 800 900100 300 400 600 700 IC -- VCE IT05082 IC -- VBE IT05083 IB=0A 200μA 400μA 1mA 2mA 3mA 5mA 7mA10mA 50mA 15mA 30mA 20mA Ta=75 --25 VCE=2V Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=30V, IE=0A 100 nA Emitter Cutoff Current I EBO VEB=4V, IC=0A 100 nA DC Current Gain h FE VCE=2V, IC=50mA 300 800 Gain-Bandwidth Product f T VCE=10V, IC=50mA 540 MHz Output Capacitance Cob V CB=10V, f=1MHz 3.3 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=200mA, IB=10mA 85 190 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=200mA, IB=10mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=1mA, RBE=∞ 30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 5 V Turn-ON Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg 255 ns Fall Time t f 40 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 30C02MH-TL-E MCPH3 3,000pcs./reel Pb Free 30C02MH-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free VR RB VCC=12VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C. ≤1% IB2 IC=20IB1= --20IB2=300mA

No.7364-3/6 IT05089 fT -- IC 100 1000 101.0 10023 5 723 5 7 100023 5 7 VCE=10V Cob -- VCB IT05088 1.0 1.0 10 23 5 23 5 7 f=1MHz VCE(sat) -- IC VBE(sat) -- IC IT05086 IT05087 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 1.0 0.1 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=50 IC / IB=20 25°C --25°CTa=75 °C 75°C Ta=--25°C 25°C Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA Collector Current, I C -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V PC -- Ta IT05092 700 500 600 400 200 300 100 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- mW Ambient Temperature, Ta -- °CBase Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06793 1.0 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB 1.0 10 100 100032 57 3 2 57 3 2 57 1000 100 hFE -- IC IT05084 VCE(sat) -- IC IT05085 Ta=75°C --25°C 25°C VCE=2V 1.0 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 25°C --25 °CTa=75 IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV When mounted on ceramic substrate (600mm2×0.8mm)

No.7364-4/6 Embossed Taping Specifi cation 30C02MH-TL-E, 30C02MH-TL-H

No.7364-5/6 Outline Drawing Land Pattern Example 30C02MH-TL-E, 30C02MH-TL-H Mass (g) Unit 0.007 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.7364-6/6 This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.