30C02MH SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Large current capacitance.
  • Low collector-to-emitter saturation voltage (resistance) : R CE(sat) typ=330mΩ [IC=0.7A, IB=35mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron). Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 40 V Collector-to-Emitter Voltage V CEO 30 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 700 mA Collector Current (Pulse) I CP 1.4 A Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Marking : CL 60210EA TK IM TC-00002359 / O2203 TS IM TA-100141 SANYO Semiconductors DATA SHEET 30C02MH NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifi er Applications http://semicon.sanyo.com/en/network

No. 7364-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=30V, IE=0A 100 nA Emitter Cutoff Current I EBO VEB=4V, IC=0A 100 nA DC Current Gain h FE VCE=2V, IC=50mA 300 800 Gain-Bandwidth Product f T VCE=10V, IC=50mA 540 MHz Output Capacitance Cob V CB=10V, f=1MHz 3.3 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=200mA, IB=10mA 85 190 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=200mA, IB=10mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=1mA, RBE=∞ 30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 5 V Turn-On Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg See specifi ed Test Circuit. 255 ns Fall Time t f See specifi ed Test Circuit. 40 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7019A-004 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 VR RB VCC=12VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C. ≤1% IB2 IC=20IB1= --20IB2=300mA 500 400 300 700 600 200 200 100 300 400 200 800 700 600 500 100 500 1000 800 900100 300 400 600 700 IC -- VCE IT05082 IC -- VBE IT05083 IB=0A 200μA 400μA 1mA 2mA 3mA 5mA 7mA10mA 50mA 15mA 30mA 20mA Ta=75 --25 VCE=2V Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA

No. 7364-3/4 IT05089 fT -- IC 100 1000 101.0 10023 5 723 5 7 100023 5 7 VCE=10V Cob -- VCB IT05088 1.0 1.0 10 23 5 23 5 7 f=1MHz VCE(sat) -- IC VBE(sat) -- IC IT05086 IT05087 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 1.0 0.1 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=50 IC / IB=20 25°C --25°CTa=75 °C 75°C Ta=--25°C 25°C Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA Collector Current, I C -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V PC -- Ta IT05092 700 500 600 400 200 300 100 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- mW Ambient Temperature, Ta -- °CBase Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06793 1.0 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB 1.0 10 100 100032 57 3 2 57 3 2 57 1000 100 hFE -- IC IT05084 VCE(sat) -- IC IT05085 Ta=75°C --25°C 25°C VCE=2V 1.0 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 25°C --25 °CTa=75 IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV When mounted on ceramic substrate (600mm2×0.8mm)

No. 7364-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of June, 2010. Specifi cations and information herein are subject to change without notice.