2A01-0754-16

SPE30S60F-D JSMC | Alldatasheet

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Technical content

版本：202311A 1/19 智能功率模块(IPM) Intelligent Power Module SPE30S60F-D 主要参数 MAIN CHARACTERISTICS 用途 APPLICATIONS

• 冰箱压缩机 ● Air-conditioning compressor
• 空调压缩机 ● Refrigerator compressor
• 低功率变频器 ● Low power inverter
• 工业缝纫机 ● Industrial sewing machine 产品特性
• 下臂 IGBT 发射极输出，内置自举二极管。
• 600V/30A 三相逆变器，内置低损耗沟道栅-场截止型 IGBT。
• IGBT 驱动：高速600V 电平转换，电源欠压保护， 短路（过流）保护，过温保护和温度输出。
• 输入接口：兼容 3.3V &5V 输入信号，高电平有效。

FEATURES

• Lower arm IGBT emitter output, built-in bootstrap diode.
• 600V/30A three-phase inverter with built-in low-loss trench gate-field stop IGBT.
• IGBT drive: high-speed 600V level conversion, power supply under-voltage protection, short circuit (overcurrent) protection，Over temperature protection and temperature output.
• Fault signal: corresponds to short circuit (overcurrent)、Over temperature and Low-side power under-voltage fault.
• Input interface: compatible with 3.3V&5V input signals, high level effective. 订 货 料 号 Order number 产 品 信 息 Product information 无卤-条管 Halogen-Free-Tube 无卤-编带 Halogen-Free-Reel 印 记 Marking 封 装 Package 2A01-0754-16 SPE30S60F-D N/A SPE30S60F-D DIP25-DBC 600V/20A 三相全桥智能功率模块 VCES 600V ± IC 30A ± ICP 60A 封装 Package DIP25-DBC PIN1-PIN25 订货信息 ORDER MESSAGE

版本：202311A 2/17 模块示意图 Module diagram 图 1：模块内部电路示意图 Fig 1: Internal circuit 图 2：模块引脚分布示意图 Fig 2: Distribution of pin

版本：202311A 3/17 管脚编号 Pin Number 管脚名称 Pin Names 管脚描述 Pin Description

1 NC 无连接

2 VUFB U 相上臂驱动电源端子

U-phase upper arm drive power terminal

3 VVFB V 相上臂驱动电源端子

V phase upper arm drive power terminal

4 VWFB W 相上臂驱动电源端子

W phase upper arm drive power terminal

5 UP U 相上臂控制信号输入端子

U-phase upper arm control signal input terminal

6 VP V 相上臂控制信号输入端子

V phase upper arm control signal input terminal

7 WP W 相上臂控制信号输入端子

W phase upper arm control signal input terminal

8 VP1 控制电源端子

9 VNC 控制电源 GND 端子

Control power GND terminal

10 UN U 相下臂控制信号输入端子

U-phase lower arm control signal input terminal

11 VN V 相下臂控制信号输入端子

V phase lower arm control signal input terminal

12 WN W 相下臂控制信号输入端子

W phase lower arm control signal input terminal

13 VN1 控制电源端子

14 FO 故障输出端子

15 CIN 短路保护触发电压检测端子

Short circuit protection trigger voltage detection terminal

16 VNC 控制电源 GND 端子

Control power GND terminal

17 VOT 温度检测输出端子

Temperature detection output terminal

18 NW W 相下臂 IGBT 发射极端子

W phase lower arm IGBT emitter terminal

19 NV V 相下臂 IGBT 发射极端子

V phase lower arm IGBT emitter terminal

20 NU U 相下臂 IGBT 发射极端子

U phase lower arm IGBT emitter terminal

21 W W 相输出端子

22 V V 相输出端子

23 U U 相输出端子

24 P 逆变器直流输入端子

Dc input terminal of inverter

25 NC 无连接

图 3：模块引脚功能定义表 Fig 3: Pin function

版本：202311A 4/17 最大额定值 (Tj= 25℃,除非特殊说明） Absolute Maximum Ratings （Tj= 25℃, Unless otherwise Specified） 逆变部分 Inverter Part 记号 Mark 项目 Project 条件 Condition 额定值 Ratings 单位 Units VCC 电源电压 supply voltage 应用于 P- NU, NV, NW 之间 It applies between p-nu, NV, and NW 450 V VCC(Surge) 电源电压（含浪涌） Supply voltage (including surge) 应用于 P- NU, NV, NW 之间 It applies between p-nu, NV, and NW 500 V VCES 集电极-发射极间电压 Collector to emitter voltage / 600 V ± IC 集电极电流 Collector current TC = 25° C（Tc 测试方法见图 4） TC = 25° C (see Figure 4 for Tc test method) 30 A ± ICP 集电极电流（峰值） Collector current (peak) TC= 25° C, 脉冲宽度小于 1ms TC = 25° C, pulse width is less than 1ms 60 A PC 集电极功耗 Collector power consumption TC = 25° C，单晶片 TC = 25° C, single chip 79 W Tj 结温 Junction temperature (见备注 1) (See note 1) -40~+150 °C 备注 1：IPM 功率晶片最大额定结温为 150° C(@表面温度 TC≤ 100° C)。然而,为了确保 IPM 运行安全，结温应限定于 Tj(av) ≤ 125° C (@表面温度 Tc ≤ 100°C)。 Remark 1: The maximum rated junction temperature of the IPM power chip is 150°C (@surface temperature TC≤ 100°C). However, to ensure safe operation of the IPM, the junction temperature should be limited to Tj(av) ≤ 125°C (@surface temperature Tc ≤ 100°C). 控制部分 Control Part 记号 Mark 项目 Project 条件 Condition 额定值 Ratings 单位 Units VDB 上桥臂控制电源电压 Upper arm control supply voltage 应用于 UFB – U, VFB-V, WFB-W 之间 Applied between UFB-U, VFB-V, WFB-W 20 V VD 控制电源电压 Control supply voltage 应用于 VP1 – VNC 之间,VN1 – VNC 之间 Applied between VP1-VNC,VN1 – VNC 20 V VIN 输入信号电压 Input signal voltage 应用于 UP, VP, WP, UN ,VN ,WN-VNC之间 Applied between UP, VP, WP, UN, VN, WN-VNC -0.3~VD+0.3 V VFO 故障输出电压 Fault output voltage 应用于 FO – VNC 之间 Applied between FO-VNC -0.3~VD+0.3 V IFO 故障输出电流 Fault output current FO 端子吸入电流值 FO terminal sink current value 1.0 mA VSC 电流检测端输入电压 Input voltage of current detection terminal 应用于 CIN – VNC 之间 Applied between CIN-VNC -0.3~VD+0.3 V

版本：202311A 5/17 整个系统 Total System 记号 Mark 项目 Project 条件 Condition 额定值 Ratings 单位 Units VCC(PROT) 电源电压自己保护范围（短路） Power supply voltage self-protection range (short circuit) VD = VDB = 13.5 ~ 16.5V Tj= 150° C, 无重复, 时间小于 2us Tj = 150° C, no repetition, time is less than 2us 400 V Tc 模块正常工作壳体温度 Module working temperature -20℃≤Tj ≤150°C -20 ~ +100 °C Tstg 贮存温度 Storage temperature / -40 ~ +125 °C Viso 绝缘耐压 Insulation withstand voltage 正弦波60Hz，AC 1分钟，在插脚和散热片之间 Sine wave 60Hz, AC for 1 minute, between pin and heat sink

1500 Vrms

图 4：壳温 Tc 测试点 Fig 4：Case Temperature Measurement 热阻 Thermal Resistance 记号 Mark 项目 Project 条件 Condition 最小值 Min. 典型值 Typ. 最大值 Max. 单位 Unit Rth(j-c)Q 结点到壳的热阻 Junction to case thermal resistance 单个 IGBT 元件 Single IGBT element - - 1.6 ° C/W Rth(j-c)F 单个 FRD 元件 Single FRD element - - 2.5 ° C/W

版本：202311A 6/17 电气特性 (Tj=25℃, 除非特殊说明) Electrical Characteristics (TJ=25℃, Unless Otherwise Specified) 逆变部分 Inverter Part 记号 Mark 项目 Project 条件 Condition 最小值 Min. 典型值 Typ. 最大值 Max. 单位 Unit VCE(sat) 集电极与发射极间饱和电压 Saturation voltage between collector and emitter VD = VDB = 15V VIN = 5V, IC =30A, Tj= 25° C - 1.85 2.4 V VD = VDB = 15V VIN = 5V, IC =30A, Tj= 125° C - 2.1 - V VF FWD 正向导通电压 FWD forward voltage VIN = 0V，IC =-30A, Tj = 25° C - 1.9 2.4 V tON 开关时间（备注 2） Switching time (Note 2) VCC = 300V, VD = VDB = 15V, IC =30A VIN = 0V-5V, 感性负载 - 860 - ns tC(ON) - 300 - ns tOFF - 930 - ns tC(OFF) - 120 - ns trr - 180 - ns Eon 开通损耗 Turn-on loss IC = 30A, VCC = 300V, VD=VDB = 15V, Tj = 25° C - 2400 - uJ Eoff 关断损耗 Turn-off loss - 1100 - ICES 集电极到发射极漏电流 Collector to emitter leakage current VCE= VCES Tj= 25° C - - 75 uA VCE= VCES Tj= 125° C - - 1 mA 备注 2：tON 和 tOFF 包括驱动 IC 内部传输延迟时间。 tC(ON) 和 tC(OFF) 是 IGBT 自身被内部给定门极驱动条件下的开关时间。详见 图 5。 Remark 2: tON and tOFF include the internal transmission delay time of the driver IC. t C(ON) and tC(OFF) are the switching times of the IGBT itself driven by the internally given gate. See Figure 5 for details. 图 5：开关时间定义 Fig 5: Switching Time Definition

版本：202311A 7/17 控制部分 Control Part 记号 Mark 项目 Project 条件 Condition 最小值 Min. 典型值 Typ. 最大值 Max. 单位 Unit ID VD 静态电流 VD Quiescent Current VD = 15V VIN = 5V VP1-VNC - - 1.6 mA IDB VDB 静态电流 VDB Quiescent Current VDB = 15V VIN = 5V UFB - U, VFB - V, WFB - W - - 550 uA VFOH 故障输出电压 Fault output voltage Vsc = 0V, FO 脚通过 10K 电 阻上拉至5V Vsc = 0V, FO pin is pulled up to 5V through 10K resistor 4.6 - - V VFOL Vsc =1V, IFO=1.5mA - - 0.3 V Vsc,TH+ 短路正向触发阙值 Short circuit forward trigger threshold VD = 15V 0.445 0.48 0.515 V Vsc,TH- 短路负向触发阙值 Short circuit negative trigger threshold VD= 15V 0.2 0.4 - V UVDD 电源欠压保护控制 Power undervoltage protection contro 触发电平 Trigger level - 11.0 - V UVDR 复位电平 Reset level - 12.0 - UVDBD 触发电平 Trigger level - 10.5 - UVDBR 复位电平 Reset level - 11.5 - TFO 故障输出脉冲宽度 Fault output pulse width - - 60 - uS VIN(ON) 开启阙值电压 Turn on threshold voltage 应用于 UP,VP,WP,UN,VN,WN 和 VNC之间 Applied between UP, VP, WP, UN, VN, WN and VNC - - 3 V VIN(OFF) 关断阙值电压 Turn-off threshold voltage 0.8 - - VOT 温度输出，备注 3 Temperature output, remark 3 V Tc=25℃ 0.88 1.1 1.39 OTP 过温保护 Over temperature protection LVIC温度 LVIC temperature 105 125 135 ℃ OTrh 过温保护迟滞 Over temperature protection hysteresis LVIC迟滞温度 LVIC Hysteresis temperature -- 10 -- ℃ RBSD BSD 限流电阻 Built-in limiting resistance 120 180 230 ohm 备注 3：IPM 的 VOT 输出特性曲线请参考图 6。 Remark 3: Please refer to Figure 6 for the VOT output characteristic curve of IPM.

版本：202311A 9/17 止过电压损坏。 (2) When using VOT on low-voltage controllers such as 3.3V single chip microcomputer,the VOT output may exceed the control power supply voltage by 3.3V when the temperature rises too fast. If the system uses low-voltage controller, it is recommended to add clamping diode between the control power supply and VOT output to prevent overvoltage damage. 推荐工作条件 Recommended Operating Conditions 记号 Mark 项目 Project 条件 Condition 最小值 Min. 典型值 Typ. 最大值 Max. 单位 Unit Vcc 电源电压 voltage 应用于 P – NU, NV, NW 之间 Applied between P – NU, NV, NW 0 300 400 V VD 控制电源电压 Control supply voltage 应用于 VP1 – VNC 之间 Applied between VP1-VNC - 15 - V VDS 上臂控制电源电压 Upper arm control power supply voltage 应用于 VUFB – U, VVFB – V, VWFB-W 之间 Applied between VUFB-U, VVFB-V, VWFB-W - 15 - V tdead 死区时间 Dead time 各桥臂输入对应, Tc<=100℃ Corresponding to the input of each bridge arm, Tc<=100℃ 1 - - us fPWM PWM 频率 PWM frequency -20℃≤Tc ≤+100℃ -20℃≤Tj≤+150℃ - - 20 kHz PWM 最小输入信号脉冲宽度 Minimum input signal pulse width ON 1 - - us OFF 1 - - us Tj 结温 Junction temperature - -20 - 125 ℃

版本：202311A 11/17 a2: Normal operation: IGBT turns on and loads current. a3: 欠压检测点(UVDt)。 a3: Undervoltage detection point (UVDt). a4: 不管输入是什么信号，IGBT 都是关闭状态。 a4: No matter what signal is input, the IGBT is off. a5: 故障输出开启。 a5: Fault output is on. a6: 欠压恢复(UVDr)。 a6: Undervoltage recovery (UVDr). a7: 正常运行: IGBT 导通并加载负载电流。 a7: Normal operation: IGBT is turned on and load current is loaded. 图 9：欠压保护时序图 (高侧) Figure 9: Timing diagram of undervoltage protection (high side) b1 : 电源电压上升：当该电压上升到欠压恢复点，在下一个欠压信号被执行前该线路将启动运行。 b1: Power supply voltage rise: When the voltage rises to the undervoltage recovery point, the line will start running before the next undervoltage signal is executed. b2 : 正常运行: IGBT 导通并加载负载电流。 b2: Normal operation: IGBT is turned on and load current is applied. b3 : 欠压检测 (UVDBt)。 b3: Undervoltage detection (UVDBt). b4 : 不管输入是什么信号，IGBT 都是关闭状态。 b4: No matter what signal is input, IGBT is off. b5 : 欠压恢复(UVDBr)。 b5: Undervoltage recovery (UVDBr). b6 : 正常运行: IGBT 导通并加载负载电流。 b6: Normal operation: IGBT is turned on and load current is applied.

版本：202311A 12/17 图 10：短路电流保护时序图（只适合于低侧） (通过外部分流电阻连接) Figure 10: Timing diagram of short-circuit current protection (only suitable for low side) (Connected via external shunt resistor) c1: 正常运行: IGBT 导通载流。 c1: Normal operation: IGBT conducting current. c2: 短路电流检测（CIN 触发器）。 c2: Short-circuit current detection (CIN trigger). c3: IGBT 门极被强制关断. c3: IGBT gate is forcibly turned off. c4: IGBT is turned off. c4 : IGBT 关断。 c4: IGBT is turned off. c5: 故障输出定时器开始运行: 故障输出信号的脉冲宽度是TFO=60us.。 c5: The fault output timer starts to run: The pulse width of the fault output signal is TFO=65 us. c6: 输入“L” : IGBT 关闭。 c6: Input "L": IGBT is off. c7: 输入 “H”: IGBT 开通，但是故障信号作用期间， IGBT 不导通。 c7: Input "H": The IGBT is turned on, but the IGBT is not turned on during the fault signal. c8: IGBT 关断。 c8: IGBT is turned off.

版本：202311A 14/17 典型应用电路图 Typical application circuit diagram 图 13：典型应用电路 Figure 13: Typical application circuit 备注 6：输入驱动高有效；IC 内部集成有一个下拉电阻；为防止发生误动作，输入布线应尽可能短； 当用 RC 去耦线路时，须确保输入信号达到开启和关断阙值电压范围。 Remark 6: The input drive is highly effective; a pull-down resistor is integrated inside the IC; in order to prevent malfunctions, the input wiring should be as short as possible; when using RC decoupling lines, make sure that the input signal reaches on and off Threshold voltage range. 备注 7：由于模块内置了专用 HVIC，其控制端子可与 CPU 端子直接相连，而不需要任何光耦或变压 器等隔离电路。 Remark 7: Since the module has a built -in dedicated HVIC, its control terminal can be directly

版本：202311A 15/17 connected to the CPU terminal without any isolation circuit such as optocoupler or transformer. 备注8：自举电路负极应直接连接到U、V、W 的端。 Remark 8: The negative pole of the bootstrap circuit should be directly connected to the U, V, W terminals. 备注9：FO 是漏极开路型，其信号线应通过一个约10kΩ 的上拉电阻上拉到+5V/3.3V 电源。 Remark 9: FO is an open -drain type, and its signal line should be pulled up to a +5V/3.3V power supply through a pull-up resistor of about 10kΩ. 备注10：为防止误保护，A、B、C 连线应尽可能短。 Note 10: To prevent false protection, the A, B, and C wiring should be as short as possible. 备注 11：保护线路 R1、C5 的时间常数建议选取在1.5~2uS。关断时间可能随着布线的不同而多少有 些变化。建议R1、C5 选择小容差，温度补偿类型。 Remark 11: The time constant of protection li nes R1 and C5 is recommended to be 1 .5~2uS. The turn-off time may vary somewhat depending on the wiring. It is recommended that R1 and C5 choose small tolerance and temperature compensation type. 备注12：所有电容的位置尽可能的靠近IPM。 Remark 12: Position all capacitors as close to IPM as possible. 备注13：为了防止噪声干扰，储能电容与P&N1 之间的引线应尽可能的短，推荐在P&N1 端子之间加 约0.1～0.22uF 的 MLCC 低频滤波电容。 Note 13: In order to prevent noise interference, the lead between the storage capacitor and P&N1 should be as short as possible. It is recommended to add about 0.1～0.22uF of MLCC low-frequency filter capacitor between P&N1 terminals. 备注14：两个VNC 端（9&16 脚）在IPM 内部已连接在一起，外部任一VNC 端子连接到GND，另一 端子允许开路。 Remark 14: The two VNC terminals (pins 9 & 16) are connected together inside the IPM, any external VNC terminal is connected to GND, and the other terminal is allowed to open. 备注15：如果控制地通过PCB 走线被连接到功率地，控制信号可能会受到功率地的起伏的影响，推荐 使用单点连接。 Remark 15: If the control ground is connected to the power ground through PCB traces, the control signal may be affected by the fluctuation of the power ground. It is recommended to use a single point connection.

版本：202311A 16/17 外形封装图 Outline package drawing DIP25-DBC 单位：mm

版本：202311A 17/17 图 14：封装尺寸示意图 Figure 14: Schematic diagram of package size 注意事项 1. 吉林华微电子股份有限公司的产品销售分为直销和销售代理， 无论哪种方式， 订货时请与公司 核实。 2. 购买时请认清公司商标，如有疑问请与公司本部联系。 3. 在电路设计时请不要超过器件的绝对最大额定值，否则会影响整机的可靠性。 4. 本说明书如有版本变更不另外告知。 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this. specification sheet and is subject to change without prior notice. 联系方式 吉林华微电子股份有限公司 公司地址：吉林省吉林市深圳街99 号 邮编：132013 总机：86-432-64678411 传真：86-432-64665812 网址：www.hwdz.com.cn CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel： 86-432-64678411 Fax：86-432-64665812 Web Site：www.hwdz.com.cn