29RD60 AMMSEMI | Alldatasheet
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A d v a n c i n g t h e S e m i c o n d u c t o r I n d u s t r y S i n c e 1 9 7 2 © 2013 American Microsemiconductor, Inc. Specifications are subject to change without notice. Aerospace Mgmt. Sys. Cert. AS/EN/JISQ9100:2009 Rev. C ISO9001:2008 Cert No. 45325
133 Kings Road,
Madison, New Jersey 07940 United States of America Tel. 1-973-377-9566, Fax. 1-973-377-3078 www.americanmicrosemi.com Document Page 1 of 1 Revised 06/2013 ABSTRACT The 29RD60 is a general purpose p-n-p-n silicon control rectifier used primarily for switching. The thyristor is enclosed in a hermetically sealed NI-2 metal stud package, which contributes to the durability and longevity of the device. MECHANICAL SPECIFICATIONS IMAGE SERVES AS A REPRESENTATION OF THE PACKAGE STYLE ONLY mm AA 39.0 Max AB 11.0 ± 0.5 AC 4.0 ± 0.5 AD 2.2 Max BA 8.0 BB 4.0 Max CA 21.0 CB 19.0 ± 0.3 D1 Ø1.8 D2 Ø3.6 T1 M6 x 1.0 Note: All dimensions are in millimeters VRSM VRRM IT(AV) ITSM I2t PGM PG(AV) VGRM IGFM Tj Tstg IRRM / IDRM (V) VDRM (V) (A) TC (°C) (50 Hz) (A) t=2- 10ms (A2S) (W) (W) (V) (A) (°C) (°C) (mA) Tj (°C)
ELECTRICAL CHARACTERISTICS
VTM VGT IGT VGD (min) dv/dt (min) IH Rth Pkg. Tj ITM Tc Tj VD Tj VD Typ. (V) (°C) (A) (V) (mA) (°C) (V) (°C) (V) (V/μs) (°C) (V) (mA) (°C/W)