29MPA0373

29MPA0373 MIMIX | Alldatasheet

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05 Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. 26.0-31.0 GHz GaAs MMIC Power Amplifier Absolute Maximum Ratings Page 1 of 7 General Description Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 1700 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF TAble MTTF Table (4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Features Chip Device Layout Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF , DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd1,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical) Detector (diff ) Output at 20 dBm Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Units GHz dB dB dB dB dB dBm dBm VDC VDC mA VDC Min. 26.0 -1.0 Typ. 7.0 12.0 32.0 +/-1.0 50.0 +26.0 +36.0 +4.5 -0.7 1100 0.7 Max. 31.0 +5.5 0.0 1400 (1) Measured at +17 dBm per tone output carrier level across the full frequency band. (2) Measured using constant current. (3) Measured with either Vdet1,2=1.0V or Vdet1,2=5.5V and Rdet=5.6kΩ. 1,2 29MPA0373

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. 26.0-31.0 GHz GaAs MMIC Power Amplifier Page 2 of 7 Power Amplifier Measurements 29MPA0373 0 2 4 6 8 1 01 21 41 61 82 02 22 42 62 83 03 23 43 63 84 04 24 44 64 85 0 Frequency (GHz) S21, -10 Vd = 4.5V, Vg = -0.6V, Id1 = 216mA, Id3 = Id4 = 440mA Gain (dB) 0 2 4 6 8 1 01 21 41 61 82 02 22 42 62 83 03 23 43 63 84 04 24 44 64 85 0 Frequency (GHz) -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 S12,Vd = 4.5V, Vg = 0.6V, Id1 = 216mA, Id3 = Id4 = 440mA Reverse Isolation (dB) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 S11,Vd = 4.5V, Vg = -0.6V, Id1 = 216mA, Id3 = Id4 = 440mA Return Loss (dB) 0 2 4 6 8 1 01 21 41 61 82 02 22 42 62 83 03 23 43 63 84 04 24 44 64 85 0 Frequency (GHz) -24 -22 -20 -18 -16 -14 -12 -10 S22,Vd = 4.5V, Vg = -0.6V, Id1 = 216mA, Id3 = Id4 = 440mA Return Loss (dB) May 2005 - Rev 05-May-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. 26.0-31.0 GHz GaAs MMIC Power Amplifier Page 3 of 7 Power Amplifier Measurements (cont.) 29MPA0373 OIP3avg vs. freq, at 13, 15, and 17dBm per tone 24 25 26 27 28 29 30 31 32 33 34 35 freq OIP3avg (dBm) 16012_0373_R6C6_15.00dBm_30 032004_1328.im 16012_0373_R6C6_13.00dBm_30 032004_1306.im 16012_0373_R6C4_17.00dBm_30 032004_1504.im 16012_0373_R6C4_15.00dBm_30 032004_1443.im 16012_0373_R6C4_13.00dBm_30 032004_1420.im 16012_0373_R6C6_17.00dBm_30 032004_1349.im OIP3avg vs. freq at 15dBm per tone, sample of 5 (Vd = 4V / Vg = -0.55V) 24 25 26 27 28 29 30 31 32 33 34 35 freq OIP3avg (dBm) 24 25 26 27 28 29 30 31 32 33 34 Pout vs. freq, Pin = -16 to 8dBm Pout (dBm) freq (GHz) May 2005 - Rev 05-May-05 Differential Detector Output vs Amplifier Output Power 0.001 0.01 0.1 -5 0 5 10 15 20 25 30 Pout (dBm) Detector Vdiff (V) 24GHz 26GHz 28GHz 30GHz 32GHz 34GHz

Vd3a,4a Vg3a,4a VDET2 VDIFF2 Vd3b,4bVg1,2 Rdet VDET1 Rdet Vd1 3 4 5 6 7 8 12 11 VDIFF1 Vg3b,4b 2 3 4 5 6 7 8 13 12 111417 16 15 RF Out 2 3 4 5 2.500 (0.098) 2.705 (0.107) 0.762 (0.030) 0.0 0.0 0.429 (0.017) 4.107 (0.162) 4.900 (0.193) 6 7 8 2.305 (0.091) 0.107 (0.042) 3.907 (0.154) 3.505 (0.138) 3.106 (0.122) 13 12 11 2.705 (0.107) 2.306 (0.091) 1.905 (0.075) 1.506 (0.059) 1417 16 15 4.107 (0.162) 3.505 (0.138) 3.106 (0.122) 3.907 (0.154) Pre-production Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 4 of 7 Mechanical Drawing (Note: Engineering designator is 29MPA0373) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bias Arrangement Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vg3a) Bond Pad #4 (Vd3a) Bond Pad #5 (Vg4a) Bond Pad #6 (Vd4a) Bond Pad #7 (V DIFF2) Bond Pad #8 (VDET2) Bond Pad #9 (RF Out) Bond Pad #10 (VDET1) Bond Pad #11 (VDIFF1) Bond Pad #12 (Vd4b) Bond Pad #13 (Vg4b) Bond Pad #14 (Vd3b) Bond Pad #15 (Vg3b) Bond Pad #16 (Vg2) Bond Pad #17 (Vg1) Bypass Capacitors - See App Note [3] 26.0-31.0 GHz GaAs MMIC Power Amplifier 29MPA0373 May 2005 - Rev 05-May-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 5 of 7 App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at Vd(1)=4.5V Id(1+2)=220mA, and Vd(3,4)=4.5V Id(3a+3b)=Id(4a+4b)=440mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=80mA, Id2=140mA, Id3a=Id3b=Id4a=Id4b=220mA. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a capacitively coupled detector, which comprises a diode connected to the signal path, and a second diode circuit used to provide a temperature compensation signal. The common bias terminal is Vdet1,2, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vdet1,2 port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively, Vdet1,2 can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rdet in the range 3 - 6kΩ. App Note [3] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF T able Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 126.0 deg Celsius 150.9 deg Celsius 175.3 deg Celsius FITs 8.38E-01 1.23E+01 1.29E+02 MTTF Hours 1.19E+09 8.12E+07 7.74E+06 Rth 14.4 ° C/W 15.3° C/W 16.2° C/W Bias Conditions: Vd1=Vd2=Vd3a/b=Vd4a/b=4.5V Id1=80 mA, Id2=140 mA, Id3a=Id3b=Id4a=Id4b=220 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. 26.0-31.0 GHz GaAs MMIC Power Amplifier 29MPA0373 May 2005 - Rev 05-May-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 6 of 7 Device Schematic 26.0-31.0 GHz GaAs MMIC Power Amplifier 29MPA0373 Block Diagram Vd4a RF In RF Out Vg1 Vdet2 Vdiff2 Vd4bVg4bVd3aVg3bVg2 Stage Arm 3b & 4b Detector 1 Lange Coupler Stage Arm 3a & 4a Detector 2 Lange Coupler Stages 1 & 2 R=50 Ohm R=50 Ohm Vg3a Vd3aVd1 Vg4a Vdet1 Vdiff1 Stages 1 & 2 Schematic R=50.0 R=250.0 R=250.0 R=50.0 R=500.0 R=5.0 R=5.0 R=16.0 R=5.0 R=16.0 R=5.0 Vd1 Vg1 RF Out RF IN Vg2 Detector 2 Schematic Vdiff2 Vdet2 R=375.0 R=725.0 R=50.0 R=200.0 R=200.0 R=100.0 R=50.0 Stages 3 & 4 Schematic V4a/b RF In R=50.0 R=15.0 R=5.0 R=5.0 R=400.0 R=50.0 R=5.0 R=15.0 R=5.0 RF Out Vg3a/b Vd3a/b Vd4a/b R=400.0 Detector 1 Schematic R=200.0 R=100.0 Vdet1 RF R=725.0 Vdiff1 R=375.0 May 2005 - Rev 05-May-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 7 of 7 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. 26.0-31.0 GHz GaAs MMIC Power Amplifier 29MPA0373 May 2005 - Rev 05-May-05