28LV011 MAXWELL | Alldatasheet
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All data sheets are subject to change without notice (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com 3.3V 1 Megabit (128K x 8-Bit) 28LV011 ©2002 Maxwell Technologies All rights reserved. EEPROM
05.28.02 Rev 2
FEATURES:
- 3.3V low voltage operation 128K x 8 Bit EEPROM R AD-PAK® radiation-hardened against natural space radiation Total dose hardness: - > 100 krad (Si), depending upon space mission Excellent Single Event Effects: - SELTH > 84 MeV/mg/cm2 - SEUTH > 37 Mev/mg/cm2 (read mode) - SEU saturated cross section = 3E-6 cm2 (read mode) - SEUTH = 11.4 Mev/mg/cm2 (write mode) - SEU saturated cross section = 5E-3 cm2 (write mode) with hard errors Package: - 32 Pin RAD-PAK® flat pack - 32 Pin RAD-PAK® DIP - JEDEC-approved byte-wide pinout Address Access Time: - 200, 250 ns Access times available High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention Page write mode: - 1 to 128 bytes Automatic programming - 15 ms automatic page/byte write Low power dissipation - 20 mW/MHz active current (typ.) - 72 µ W standby (maximum) DESCRIPTION: Maxwell Technologies’ 28LV011 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV011 is capable of in-system electrical Byte and Page pro- grammability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the comple- tion of erase and programming operations. In the 28LV011, hardware data protection is provided with the RES pin, in addi- tion to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV011 is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented R AD-PAK® packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R AD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. Note:The recommended form of data protection during power on/off is to hold the RES pin to VSS during power up and power down. This may be accompanied by connecting the RES pin to the CPU reset line. Failure to provide adequate protection during power on/off may result in lost or modified data. High Voltage Generator Control Logic Timing Address Buffer and Latch Y Decoder X Decoder Y Gating Memory Array I/O Buffer and Input Latch Data Latch VCC VSS RES OE CE WE RES A16 I/O0 I/O7 RDY/Busy Logic Diagram 28LV011
TABLE 1. 28LV011A PINOUT DESCRIPTION
24 OE Output Enable
22 CE Chip Enable
29 WE Write Enable
32 V CC Power Supply
16 V SS Ground
1 RDY/BUSY Ready/Busy
30 RES Reset
TABLE 2. 28LV011 ABSOLUTE MAXIMUM RATINGS
- V IN min = -3.0 V for pulse width < 50 ns.
TABLE 3. DELTA LIMITS
TABLE 4. 28LV011 RECOMMENDED OPERATING CONDITIONS
- V IL min = -1.0 V for pulse width < 50 ns.
TABLE 5. 28LV011 CAPACITANCE TABLE 6. 28LV011 DC ELECTRICAL CHARACTERISTICS
TABLE 7. 28LV011 AC CHARACTERISTICS FOR READ OPERATION1
- Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
- tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
- t WC must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the
internal write operation within this value. TABLE 9. 28LV011 MODE SELECTION1,2
- Refer to the recommended DC operating conditions.
TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
FIGURE 1. READ TIMING WAVEFORM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) FIGURE 8. DATA POLLING TIMING WAVEFORM
FIGURE 9. TOGGLE BIT WAVEFORM FIGURE 10. SEU SATURATED CROSS SECTION VALUES IN READ MODE
FIGURE 11. SEU SATURATED CROSS SECTION VALUES IN WRITE MODE techniques to preserve data protection. and write mode automatically and only the input data are written into the EEPROM.
15All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV011 RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch function. Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE , OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis- take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins. 2. Data Protection at V CC on/off
16All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV011 When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non- protection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec- tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
17All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV011 Note: All dimensions in inches 32-PIN RAD-PAK® FLAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A 0.117 0.130 0.143 b 0.015 0.017 0.022 c 0.003 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416 E1 -- -- 0.440 E2 0.234 0.240 -- E3 0.030 0.085 -- e 0.050BSC L 0.350 0.370 0.390 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N3 2
18All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV011 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech- nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
19All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV011 Feature Option Details28LV011 XX X X -XX Access Time Screening Flow Package Radiation Feature Base Product Nomenclature 20 = 200 ns 25 = 250 ns Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25° F = Flat Pack RP = RAD-PAK® package RT11 = Guaranteed to 10 krad at die level RT2 1= Guaranteed to 25 krad at die level RT4 1 = Guaranteed to 40 krad at die level 1. No Radiation Guarantee for Class E & I 3.3V 1 Megabit (128K x 8-Bit) EEPROM