28LV010 MAXWELL | Alldatasheet
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All data sheets are subject to change without notice (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com 3.3V 1 Megabit (128K x 8-Bit) 28LV010 ©2001 Maxwell Technologies All rights reserved. EEPROM
03.14.03 REV 6
FEATURES:
- 3.3V low voltage operation 128K x 8 Bit EEPROM R AD-PAK® radiation-hardened against natural space radiation Total dose hardness: - > 100 krad (Si), depending upon space mission Excellent Single Event Effects: -S E LTH > 84 MeV/mg/cm2 -S E UTH > 37 Mev/mg/cm2 (read mode) - SEU saturated cross section = 3E-6 cm2 (read mode) -S E UTH = 11.4 Mev/mg/cm2 (write mode) - SEU saturated cross section = 5E-3 cm2 (write mode) with hard errors Package: -3 2P i nRAD-PAK® flat pack -3 2P i nRAD-PAK®D I P - JEDEC-approved byte-wide pinout Address Access Time: - 200, 250 ns maximum access times available High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention Page write mode: - 1 to 128 bytes Automatic programming - 10 ms automatic page/byte write Low power dissipation -2 0m W / M H za c t i v ec u r r e n t( t y p . ) - 72 µ W standby (maximum) DESCRIPTION: Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page pro- grammability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the comple- tion of erase and programming operations. In the 28LV010, hardware data protection is provided with the RES pin, in addi- tion to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented R AD-PAK® packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R AD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. High Voltage Generator Control Logic Timing Address Buffer and Latch Y Decoder X Decoder YG a t i n g Memory Array I/O Buffer and Input Latch Data Latch VCC VSS RES OE CE WE RES A16 I/O0 I/O7 RDY/Busy Logic Diagram
TABLE 1. 28LV010 PINOUT DESCRIPTION
24 OE Output Enable
22 CE Chip Enable
29 WE Write Enable
32 V CC Power Supply
16 V SS Ground
1 RDY/BUSY Ready/Busy
30 RES Reset
TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS
- V IN min = -3.0 V for pulse width < 50 ns.
TABLE 3. DELTA LIMITS1
- Parameters are measured and recorded as Deltas per
TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS
- V IL min = -1.0 V for pulse width < 50 ns.
TABLE 5. 28LV010 CAPACITANCE TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS
- Rdy/Bsy is an open collector output.
TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION1
- Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
- tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
internal write operation within this value. TABLE 9. 28LV010 MODE SELECTION1,2
- Refer to the recommended DC operating conditions.
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
FIGURE 1. READ TIMING WAVEFORM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE )
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON -PROTECTION MODE ) FIGURE 8. DATA POLLING TIMING WAVEFORM
FIGURE 9. TOGGLE BIT WAVEFORM techniques to preserve data protection. erase and write mode automatically and only the input data are written into the EEPROM. the RDY/Busy signal changes state to high impedance.
14All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch function. Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE ,O E,W E) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis- take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins. 2. Data Protection at V CC on/off
15All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V CC on/off by using a CPU reset signal to RES pin. RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RESfalls low during programming operation. RES should be kept high for 10 ms after the last data input. 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non- protection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec- tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. 15ms min
16All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 Note: All dimensions in inches 32-PIN RAD-PAK®F LAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A 0.121 0.134 0.147 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.304 0.310 -- E3 0.030 0.085 -- e 0.050BSC L 0.355 0.365 0.375 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N3 2
17All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010
32 PIN RAD-TOLERANT FLAT PACK
Note: All Dimentions in Inches SYMBOL DIMENSION MIN NOM MAX A 0.095 0.109 0.125 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.350 0.365 -- E3 0.030 0.085 -- e 0.050BSC L 0.355 0.365 0.375 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N3 2
18All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 Note: All dimensions in inches
32 PIN DUAL IN-LINE PACKAGE1
- Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is 3000g’s SYMBOL DIMENSION MIN NOM MAX A -- 0.152 0.225 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.018 D -- 1.600 1.680 E 0.510 0.590 0.620 eA 0.600 BSC eA/2 0.300 BSC e 0.100 BSC L 0.135 0.145 0.155 Q 0.015 0.037 0.070 S1 0.005 0.025 -- S2 0.005 -- -- N3 2
19All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech- nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
20All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 1.) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type- Constant Acceleration is 3000g’s. Model Number Feature Option Details28LV010 XX X X -XX Access Time Screening Flow Package Radiation Feature Base Product Nomenclature 20 = 200 ns 25 = 250 ns Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) D = Dual In-line Package (DIP) F=F l a tP a c k RP = RAD-PAK® package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level 3.3V 1 Megabit (128K x 8-Bit) EEPROM