28C011T MAXWELL | Alldatasheet
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1 Megabit (128K x 8-Bit) EEPROM
©2003 Maxwell Technologies All rights reserved.
11.10.03 REV 10
FEATURES:
- 128k x 8-bit EEPROM R AD-PAK® radiation-hardened against natural space radia- tion Total dose hardness: - > 100 krad (Si), depending upon space mission Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode Package: - 32-pin RAD-PAK® flat package - 32-pin Rad-Tolerant flat package - JEDEC-approved byte-wide pinout High speed: - 120, 150, and 200 ns maximum access times available High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention Page write mode: - 1 to 128 bytes Low power dissipation - 20 mW/MHz active (typical) - 110 µ W standby (maximum) DESCRIPTION: Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the comple- tion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addi- tion to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented R AD-PAK® packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R AD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. High Voltage Generator Control Logic Timing Address Buffer and Latch Y Decoder X Decoder Y Gating Memory Array I/O Buffer and Input Latch Data Latch VCC VSS RES OE CE WE RES A16 I/O0 I/O7 RDY/Busy Logic Diagram 28C011T
1 Megabit (128K x 8-Bit) EEPROM 28C011T
TABLE 1. 28C011T PINOUT DESCRIPTION
24 OE Output Enable
22 CE Chip Enable
29 WE Write Enable
32 V CC Power Supply
16 V SS Ground
30 RES Reset
TABLE 2. 28C011T ABSOLUTE MAXIMUM RATINGS
- V IN min = -3.0V for pulse width < 50ns.
TABLE 3. DELTA LIMITS TABLE 4. 28C011T RECOMMENDED OPERATING CONDITIONS
- V IL min = -1.0V for pulse width < 50 ns
TABLE 5. 28C011T CAPACITANCE TABLE 6. 28C011T DC ELECTRICAL CHARACTERISTICS
- I LI on RES = 100 uA max.
TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
- Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (inclu ding
scope and jig); reference levels for measuring timing - 0.8V/1.8V. DF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
- Use this device in a longer cycle than this value.
internal write operation within this value.
- Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
FIGURE 1. READ TIMING WAVEFORM TABLE 9. 28C011T MODE SELECTION 1
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. DATA POLLING TIMING WAVEFORM
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) techniques to preserve data protection. erase and write mode automatically and only the input data are written into the EEPROM.
13All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per- forming a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch function. Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE , OE, WE) during Operation.
14All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis- take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at V CC on/off When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V CC on/off by using a CPU reset signal to RES pin. RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 3. Software Data Protection
15All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non- protection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec- tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
16All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. 32-PIN RAD-PAK® FLAT PACKAGE Note: All dimensions in inches SYMBOL DIMENSION MIN NOM MAX A 0.117 0.130 0.143 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416 E1 -- -- 0.440 e 0.050BSC L 0.350 0.370 0.390 Q 0.021 0.033 0.036 S1 0.005 0.027 -- N3 2
17All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. Note: All dimensions in inches. 28C011T 32-PIN RAD-TOLERANT FLAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A 0.078 0.087 0.096 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416 E1 -- -- 0.426 e 0.050BSC L 0.390 0.400 0.410 S1 0.005 0.027 -- N3 2
18All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech- nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
19All data sheets are subject to change without notice ©2003 Maxwell Technologies All rights reserved. Feature Option Details28C011T XX F X -XX Access Time Screening Flow Package Radiation Feature Base Product Nomenclature 12 = 120 ns 15 = 150 ns 20 = 200 ns Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) F = Flat Pack RP = R AD-PAK® package RT = No Radiation Guarentee CLass E and I Only RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at