27C010T MAXWELL | Alldatasheet
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Technical content
All data sheets are subject to change without notice (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
1 Megabit (128K x 8-Bit) -
©2001 Maxwell Technologies All rights reserved.
12.12.01 Rev 2
FEATURES:
- 128k x 8 Bit OTP EPROM organization
- R AD-PAK® radiation-hardened against natural space radia- tion
- Total dose hardness: - >100 krad (Si), depending upon space mission
- Excellent Single Event Effects: - SELTH LET: > 80 MeV/mg/cm2 - SEUTH LET (read mode): >80 Mev/mg/cm2
- Package: - 32 pin RAD-PAK® flat pack - Weight - 6.0 grams
- Fast access time: - 120, 150, 200 ns (max) times available
- Low power consumption: - Active mode: 50 mW/MHz (typ) - Standby mode: 5µW (typ)
- High speed page and word programming: - Page programming time: 14 sec (typ)
- Programming power supply: - V PP = 12.5 V ± 0.3 V
- One-time Programmable
- Pin Arrangement - JEDEC standard byte-wide EPROM - Flash memory and mask ROM compatible DESCRIPTION: Maxwell Technologies ’ 27C010T high density 1 Megabit One-time Programmable Elec trically Programmable Read Only Memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C010T features fast address times and low power dissipa- tion. The 27C010T offers high speed programming using page programming mode. The 27C010T is offered in JEDEC-Stan- dard Byte-Wide EPROM pinouts, which allows socket replace- ment with Flash Memory and Mask ROMs. Maxwell Technologies' patented R AD-PAK® packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. In a GEO orbit, R AD-PAK provides greater than 100 krad (Si) radiation dose toleranc e. This product is available with screening up to Class S. 1024 x 1024 Memory MatrixX-Decoder Input Data Control Y-Gating Y-Decoder H H : High Threshold Inverter VSS VPP VCC PGM OE CE I/O7 I/O0 A16 A12 A0-A4 A10-A11 16 17
32 V CC
V PP 27C010T Logic Diagram
1 Megabit (128K x 8-Bit) - OTP EPROM 27C010T
TABLE 1. 27C010T PINOUT DESCRIPTION
22 CE Chip Enable
24 OE Output Enable
32 V CC Power Supply
16 V SS Ground
31 PGM Programming Enable
30 NC No Connection
TABLE 2. 27C010T ABSOLUTE MAXIMUM RATINGS
- V IN, VOUT, and VID min = -1.0V for pulse width < 20 ns.
TABLE 3. DELTA LIMITS
TABLE 4. 27C010T RECOMMENDED OPERATING CONDITIONS
- V IL min = -1.0V for pulse width < 50 ns.
- V IH max = VCC + 1.5V for pulse width < 20 ns.
TABLE 5. 27C010T CAPACITANCE 1 TABLE 6. 27C010T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
TABLE 7. 27C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 DF is defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 27C010T DC E LECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4
- V CC must be applied before VPP and removed after VPP.
- V PP must not exceed 13V, inlcuding overshoot.
- Do not change V PP from VIL to 12.5V or 12.5V to VIL when CE =LOW.
- DC electrical paramters for progr amming operations are not tested. These parameters are guaranteed by design.
- Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V.
- If V IH is over the specified maximum value, programming operation can not be guaranteed.
- V IL min = -0.6V for pulse width < 20 ns.
TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2
- AC electrical parameters for programming operation are not tested. These are guaranteed by design.
TABLE 10. 27C010T MODE SELECTION 1,2 TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2
FIGURE 1. READ TIMING WAVEFORM
FIGURE 2. BYTE PROGRAMMING FLOWCHART
FIGURE 3. BYTE PROGRAMMING TIMING WAVEFORM
FIGURE 4. PAGE PROGRAMMING FLOWCHART
FIGURE 5. PAGE PROGRAMMING TIMING WAVEFORM
12All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. Note: All dimensions in inches
32 PIN RAD-PAK® FLAT PACKAGE
A 0.194 0.207 0.220 b 0.015 0.017 ±.002 0.019 c 0.004 0.005 0.007 D 0.812 0.820 0.828 E 0.474 0.480 0.486 E1 -- -- 0.498 E2 0.304 0.310 0.316 E3 0.030 0.085 -- e 0.050 BSC L 0.370 0.380 0.390 Q 0.067 0.070 0.073 S1 0.005 0.027 -- N3 2 32LDFP
13All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. Important Notice: These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech- nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
14All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. Feature Option Details27C010T XX F X -XX Access Time Screening Flow Package Radiation Feature Base Product Nomenclature 12 = 120 ns 15 = 150 ns 20 = 200 ns Monolithic S = Maxwell Class S B = Maxwell Class B E = Engineering (testing @ +25°C I = Industrial (testing @ -55°C, +25°C, +125°C) F = Flat Pack RP = R AD-PAK® package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level