26TX0555

26TX0555 MIMIX | Alldatasheet

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Features

Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 320,190,110 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout Units GHz GHz GHz GHz dB dB dBm dB dB dBm VDC VDC VDC VDC mA mA mA mA Min. 18.0 18.0 8.0 DC -1.2 -1.2 Typ. 14.0 9.0 +2.0 15.0 5.0 +25.0 +5.0 -5.0 -0.2 -0.5 230 140 Max. 36.0 36.0 19.5 3.0 +5.5 +0.1 +0.1 280 170 Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) LO Input Drive (P LO) Isolation LO/RF @ LOx1 Isolation LO/RF @ LOx2 Output Third Order Intercept (OIP3) Drain Bias Voltage (Vd1,2,3) Source Bias Voltage (Vss) Gate Bias Voltage (Vg1,2) Gate Bias Voltage (Vg3,4) Doubler, Mixer Supply Current (Id1) (Vd1=5.0V, Vg=-0.2V Typical) Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical) Supply Current (Id3) (Vd3=5.0V, Vg=-0.5V Typical) Supply Current (Iss) (Vss=-5.0V) (1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. 1,2 26TX0555 August 2005 - Rev 04-Aug-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 2 of 8 Transmitter Measurements Pre-production 18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555August 2005 - Rev 04-Aug-05 _0555_5samples: USB Conversion gain (dB) vs. RF USB (GHz) IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm 19 20 21 22 23 24 25 26 27 28 29 30 31 RF USB (GHz) USB Conversion gain (dB) , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 _0555_samples: LSB Conversion gain (dB) vs. RF LSB (GHz) IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm 19 20 21 22 23 24 25 26 27 28 29 30 31 RF LSB (GHz) LSB Conversion gain (dB) , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 _0555_5samples: LO to RF gain (dB) vs. LO freq (GHz) IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm -40 -35 -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 16 17 LO freq (GHz) LO to RF gain (dB) , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 _0555_5samples: LOx2 to RF gain (dB) vs. LO freq (GHz) IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm -30 -25 -20 -15 -10 8 9 10 11 12 13 14 15 16 17 LO freq (GHz) LOx2 to RF gain (dB) , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 0555_4samples: OIP3 and IIP3 (dBm) vs. RF USB (GHz) IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 0, 2 & 4 dBm 19 20 21 22 23 24 25 26 27 28 29 30 31 RF USB (GHz) OIP3 and IIP3 (dBm) , LO Power (dBm)=0, RC=R5C10 , LO Power (dBm)=0, RC=R5C13 , LO Power (dBm)=0, RC=R7C11 , LO Power (dBm)=0, RC=R7C13 , LO Power (dBm)=2, RC=R5C10 , LO Power (dBm)=2, RC=R5C13 , LO Power (dBm)=2, RC=R7C11 , LO Power (dBm)=2, RC=R7C13 , LO Power (dBm)=4, RC=R5C10 , LO Power (dBm)=4, RC=R5C13 , LO Power (dBm)=4, RC=R7C11 , LO Power (dBm)=4, RC=R7C13 , LO Power (dBm)=0, RC=R5C10 , LO Power (dBm)=0, RC=R5C13 , LO Power (dBm)=0, RC=R7C11 , LO Power (dBm)=0, RC=R7C13 , LO Power (dBm)=2, RC=R5C10 , LO Power (dBm)=2, RC=R5C13 , LO Power (dBm)=2, RC=R7C11 , LO Power (dBm)=2, RC=R7C13 , LO Power (dBm)=4, RC=R5C10 , LO Power (dBm)=4, RC=R5C13 , LO Power (dBm)=4, RC=R7C11 , LO Power (dBm)=4, RC=R7C13 OIP3 (dBm) IIP3 (dBm) _0555_4samples: OIP3 and IIP3 (dBm) vs. RF LSB (GHz) IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 0, 2 & 4 dBm 19 20 21 22 23 24 25 26 27 28 29 30 31 RF LSB (GHz) OIP3 and IIP3 (dBm) , LO Power (dBm)=0, RC=R5C10 , LO Power (dBm)=0, RC=R5C13 , LO Power (dBm)=0, RC=R7C11 , LO Power (dBm)=0, RC=R7C13 , LO Power (dBm)=2, RC=R5C10 , LO Power (dBm)=2, RC=R5C13 , LO Power (dBm)=2, RC=R7C11 , LO Power (dBm)=2, RC=R7C13 , LO Power (dBm)=4, RC=R5C10 , LO Power (dBm)=4, RC=R5C13 , LO Power (dBm)=4, RC=R7C11 , LO Power (dBm)=4, RC=R7C13 , LO Power (dBm)=0, RC=R5C10 , LO Power (dBm)=0, RC=R5C13 , LO Power (dBm)=0, RC=R7C11 , LO Power (dBm)=0, RC=R7C13 , LO Power (dBm)=2, RC=R5C10 , LO Power (dBm)=2, RC=R5C13 , LO Power (dBm)=2, RC=R7C11 , LO Power (dBm)=2, RC=R7C13 , LO Power (dBm)=4, RC=R5C10 , LO Power (dBm)=4, RC=R5C13 , LO Power (dBm)=4, RC=R7C11 , LO Power (dBm)=4, RC=R7C13 OIP3 (dBm) IIP3 (dBm)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 3 of 9 Pre-production Transmitter Measurements (cont.) 18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 _0555_5samples: USB Conversion gain (dB) vs. Vg1 (V) IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm -35 -30 -25 -20 -15 -10 Vg1 (V) USB Conversion gain (dB) , LO Power (dBm)=2, RF freq (GHz)=20, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=20, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=20, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=20, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=20, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=21, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=21, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=21, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=21, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=21, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=22, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=22, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=22, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=22, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=22, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=23, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=23, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=23, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=23, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=23, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=24, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=24, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=24, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=24, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=24, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=25, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=25, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=25, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=25, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=25, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=26, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=26, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=26, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=26, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=26, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=27, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=27, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=27, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=27, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=27, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=28, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=28, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=28, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=28, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=28, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=29, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=29, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=29, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=29, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=29, RC=R7C13 , LO Power (dBm)=2, RF freq (GHz)=30, RC=R5C10 , LO Power (dBm)=2, RF freq (GHz)=30, RC=R5C13 , LO Power (dBm)=2, RF freq (GHz)=30, RC=R6C11 , LO Power (dBm)=2, RF freq (GHz)=30, RC=R7C11 , LO Power (dBm)=2, RF freq (GHz)=30, RC=R7C13 _0555_5samples: USB Conv Gain (dB), Id1 & IIP3 (dBm) vs. Vg1 (V) IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 2dBm -20 -15 -10 Vg1 (V) USB Conv Gain (dB) and IIP3 (dBm) 100 150 200 250 300 350 400 450 , RF USB (GHz)=21, RC=R5C10 , RF USB (GHz)=21, RC=R5C12 , RF USB (GHz)=21, RC=R6C11 , RF USB (GHz)=21, RC=R7C11 , RF USB (GHz)=21, RC=R7C13 , RF USB (GHz)=23, RC=R5C10 , RF USB (GHz)=23, RC=R5C12 , RF USB (GHz)=23, RC=R6C11 , RF USB (GHz)=23, RC=R7C11 , RF USB (GHz)=23, RC=R7C13 , RF USB (GHz)=25, RC=R5C10 , RF USB (GHz)=25, RC=R5C12 , RF USB (GHz)=25, RC=R6C11 , RF USB (GHz)=25, RC=R7C11 , RF USB (GHz)=25, RC=R7C13 , RF USB (GHz)=27, RC=R5C10 , RF USB (GHz)=27, RC=R5C12 , RF USB (GHz)=27, RC=R6C11 , RF USB (GHz)=27, RC=R7C11 , RF USB (GHz)=27, RC=R7C13 , RF USB (GHz)=29, RC=R5C10 , RF USB (GHz)=29, RC=R5C12 , RF USB (GHz)=29, RC=R6C11 , RF USB (GHz)=29, RC=R7C11 , RF USB (GHz)=29, RC=R7C13 , RF USB (GHz)=21, RC=R5C10 , RF USB (GHz)=21, RC=R5C12 , RF USB (GHz)=21, RC=R6C11 , RF USB (GHz)=21, RC=R7C11 , RF USB (GHz)=21, RC=R7C13 , RF USB (GHz)=23, RC=R5C10 , RF USB (GHz)=23, RC=R5C12 , RF USB (GHz)=23, RC=R6C11 , RF USB (GHz)=23, RC=R7C11 , RF USB (GHz)=23, RC=R7C13 , RF USB (GHz)=25, RC=R5C10 , RF USB (GHz)=25, RC=R6C11 , RF USB (GHz)=25, RC=R7C11 , RF USB (GHz)=25, RC=R7C13 , RF USB (GHz)=27, RC=R5C10 , RF USB (GHz)=27, RC=R5C12 , RF USB (GHz)=27, RC=R6C11 , RF USB (GHz)=27, RC=R7C11 , RF USB (GHz)=27, RC=R7C13 , RF USB (GHz)=29, RC=R5C10 , RF USB (GHz)=29, RC=R5C12 , RF USB (GHz)=29, RC=R6C11 , RF USB (GHz)=29, RC=R7C11 , RF USB (GHz)=29, RC=R7C13 , RF USB (GHz)=21, RC=R5C10 , RF USB (GHz)=21, RC=R5C12 , RF USB (GHz)=21, RC=R6C11 , RF USB (GHz)=21, RC=R7C11 , RF USB (GHz)=21, RC=R7C13 , RF USB (GHz)=23, RC=R5C10 , RF USB (GHz)=23, RC=R5C12 , RF USB (GHz)=23, RC=R6C11 , RF USB (GHz)=23, RC=R7C11 , RF USB (GHz)=23, RC=R7C13 , RF USB (GHz)=25, RC=R5C10 , RF USB (GHz)=25, RC=R5C12 , RF USB (GHz)=25, RC=R6C11 , RF USB (GHz)=25, RC=R7C11 , RF USB (GHz)=25, RC=R7C13 , RF USB (GHz)=27, RC=R5C10 RF USB (GHz)=27 RC =R5C12 0555_5samples: LSB Conv Gain (dB) and IIP3 (dBm) vs. Vg1 (V) IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 2dBm -20 -15 -10 Vg1 (V) LSB Conv Gain (dB) and IIP3 (dBm) , RF LSB (GHz)=21, RC=R5C10 , RF LSB (GHz)=21, RC=R5C12 , RF LSB (GHz)=21, RC=R6C11 , RF LSB (GHz)=21, RC=R7C11 , RF LSB (GHz)=21, RC=R7C13 , RF LSB (GHz)=23, RC=R5C10 , RF LSB (GHz)=23, RC=R5C12 , RF LSB (GHz)=23, RC=R6C11 , RF LSB (GHz)=23, RC=R7C11 , RF LSB (GHz)=23, RC=R7C13 , RF LSB (GHz)=25, RC=R5C10 , RF LSB (GHz)=25, RC=R5C12 , RF LSB (GHz)=25, RC=R6C11 , RF LSB (GHz)=25, RC=R7C11 , RF LSB (GHz)=25, RC=R7C13 , RF LSB (GHz)=27, RC=R5C10 , RF LSB (GHz)=27, RC=R5C12 , RF LSB (GHz)=27, RC=R6C11 , RF LSB (GHz)=27, RC=R7C11 , RF LSB (GHz)=27, RC=R7C13 , RF LSB (GHz)=29, RC=R5C10 , RF LSB (GHz)=29, RC=R5C12 , RF LSB (GHz)=29, RC=R6C11 , RF LSB (GHz)=29, RC=R7C13 , RF LSB (GHz)=21, RC=R5C10 , RF LSB (GHz)=21, RC=R5C12 , RF LSB (GHz)=21, RC=R6C11 , RF LSB (GHz)=21, RC=R7C11 , RF LSB (GHz)=21, RC=R7C13 , RF LSB (GHz)=23, RC=R5C10 , RF LSB (GHz)=23, RC=R5C12 , RF LSB (GHz)=23, RC=R6C11 , RF LSB (GHz)=23, RC=R7C11 , RF LSB (GHz)=23, RC=R7C13 , RF LSB (GHz)=25, RC=R5C10 , RF LSB (GHz)=25, RC=R5C12 , RF LSB (GHz)=25, RC=R6C11 , RF LSB (GHz)=25, RC=R7C11 , RF LSB (GHz)=25, RC=R7C13 , RF LSB (GHz)=27, RC=R5C10 , RF LSB (GHz)=27, RC=R5C12 , RF LSB (GHz)=27, RC=R6C11 , RF LSB (GHz)=27, RC=R7C11 , RF LSB (GHz)=27, RC=R7C13 , RF LSB (GHz)=29, RC=R5C10 , RF LSB (GHz)=29, RC=R5C12 , RF LSB (GHz)=29, RC=R6C11 , RF LSB (GHz)=29, RC=R7C13 _0555_4samples: USB Conversion Gain (dB) vs. RF (GHz) IF = -10 dBm per tone, LO Power = 2 and 4 dBm, Nominal Bias 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 RF USB (GHz) USB Conversion Gain (dB) , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 _0555_4samples: LSB Conversion Gain (dB) vs. RF (GHz) IF = -10 dBm per tone, LO Power = 2 and 4 dBm, Nominal Bias 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 RF LSB (GHz) LSB Conversion Gain (dB) , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 August 2005 - Rev 04-Aug-05

18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 4 of 9 Transmitter Measurements (cont.) _0555_4samples: LSB IIP3 (dBm) vs. RF (GHz) IF = -10dBm per tone, LO Power = 2 and 4dBm, Nominal Bias 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 RF LSB (GHz) LSB IIP3 (dBm) , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C12 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C12 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 _0555_4samples: USB IIP3 (dBm) vs. RF (GHz) IF = -10 dBm per tone, LO Power = 2 and 4 dBm, Nominal Bias 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 RF USB (GHz) USB IIP3 (dBm) , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11 , Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13 August 2005 - Rev 04-Aug-05

0.295 (0.012) 2.000 (0.079) 0.305 (0.012) 0.904 (0.036) 1.904 (0.075) 2.104 (0.083) 2.504 (0.099) 2.904 (0.114) 3.200 (0.126) 0.996 (0.039) 2.704 (0.106) 2.305 (0.091) 0.904 (0.036) 0.0 0.0 0.504 (0.020) Pre-production 18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 5 of 9 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 26TX0555) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF Out) Bond Pad #2 (Vd1) Bond Pad #3 (IF1) Bond Pad #4 (Vg4) Bond Pad #5 (Vg3) Bond Pad #6 (Vg2) Bond Pad #7 (Vss) Bond Pad #8 (LO) Bond Pad #9 (Vd3) Bond Pad #10 (Vd2) Bond Pad #11 (IF2) Bond Pad #12 (Vg1) August 2005 - Rev 04-Aug-05

18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 6 of 9 MTTF T ables (TBD) Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius FITs MTTF Hours Rth C/W C/W C/W Bias Conditions: Vd1=Vd2=Vd3=5.0V, Vss=-5.0V, Id1=230mA, Id2=140mA, Id3=75mA, Iss=50mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd(1,2,3)=5.0V, Vss=-5.0V, Id1=230mA, Id2=140mA, Id3=75mA and Iss=50mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. Gain control can be adjusted by varying Vg1 from 0.0 to -1.2 V with 0.0 V providing minimum attenuation and -1.2 V providing maximum attenuation. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.2V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias -- Each DC pad (Vd1,2,3, Vss, and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. August 2005 - Rev 04-Aug-05

18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 7 of 9 App Note [3] USB/LSB Selection - USBLSB IF1IF2 An alternate method of Selection of USB or LSB: For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (180º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. With IF1 and IF2 connected to the direct port (0º) and coupled port (180º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Upper Side Band operation (USB): -180º In Phase Combiner USB In Phase Combiner LSB -180º IF2 IF1 IF2 IF1 August 2005 - Rev 04-Aug-05

18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 8 of 9 Device Schematic Block Diagram RF Out Vg1 IF1 Vd2 Vd3 Vss Vg2IF2 Vg4 LO InLO OutLORFRF Out RF In Vd1 LO Buffer Mixer Vg3 Output Amp LOLO InLO Out Doubler August 2005 - Rev 04-Aug-05

18.0-36.0 GHz GaAs MMIC Transmitter 26TX0555 Pre-production Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 9 of 9 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. August 2005 - Rev 04-Aug-05