26BAM0545 MIMIX | Alldatasheet

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Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Chip Device Layout Page 1 of 5Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Electrical Characteristics (Ambient T emperature T = 25o C) Units GHz GHz GHZ GHz dB dB dB dB dBm dB dB dB dBm VDC Min. 20.0 20.0 15.0 DC -1.2 Typ. 10.0 10.0 10.0 8.0 +12.0 35.0 TBD TBD +25.0 -0.5 Max. 38.0 38.0 43.0 3.0 +0.1 Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) RF Return Loss (S11) IF Return Loss (S22) LO Return Loss (S33) Conversion Loss (S21) LO Input Drive (P LO) Isolation LO/RF Isolation LO/IF Isolation RF/IF Input Third Order Intercept (IIP3) Gate Bias Voltage (Vg1) November 2005 - Rev 21-Nov-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 2 of 5 Pre-production 26BAM0545 20.0-38.0 GHz GaAs MMIC Balanced Mixer 26BAM0545: LO to RF Isolation (dB) vs LO Freq (GHz) LO = +12 dBm, Vg = -0.5 V -50 -45 -40 -35 -30 -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 40 LO (GHz) LO to RF Isolation (dB) 26BAM0545: IIP3 (dBm) vs. RF USB (GHz) IF = 2 GHz at -13 dBm per Tone 18 20 22 24 26 28 30 32 34 36 38 40 RF USB (GHz) IIP3 (dBm) LO = 9 dBm LO = 12 dBm LO = 15 dBm 26BAM0545: IIP3 (dBm) vs. RF LSB (GHz) IF = 2 GHz at -13 dBm per Tone 18 20 22 24 26 28 30 32 34 36 38 40 RF LSB (GHz) IIP3 (dBm) LO = 9 dBm LO = 12 dBm LO = 15 dBm November 2005 - Rev 21-Nov-05 26BAM0545: Conversion Gain (dB) vs RF Freq (GHz) IF = 1.8 GHz, IF Pin = -10 dBm, LO = +12 dBm -20 -18 -16 -14 -12 -10 18 20 22 24 26 28 30 32 34 36 38 40 RF (GHz) Conversion Gain (dB) RF at USB RF at LSB

0.316 (0.012) 2.000 (0.079) 1.460 (0.057) 0.0 0.0 0.316 (0.012) 1.250 (0.049) 1.594 (0.063) 4 0.995 (0.039) Pre-production 26BAM0545 20.0-38.0 GHz GaAs MMIC Balanced Mixer Page 3 of 5 Mechanical Drawing Bias Arrangement (Note: Engineering designator is 26BAM0545) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF) Bond Pad #2 (IF1) Bond Pad #3 (LO) Bond Pad #4 (Vg) Bond Pad #5 (IF2) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Bypass Capacitors - See App Note [2] November 2005 - Rev 21-Nov-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 4 of 5 USBLSB IF1IF2 An alternate method of Selection of USB or LSB: For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (180º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. With IF1 and IF2 connected to the direct port (0º) and coupled port (180º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Upper Side Band operation (USB): -180º In Phase Combiner USB In Phase Combiner LSB -180º IF2 IF1 IF2 IF1 26BAM0545 20.0-38.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by biasing Vg1 = -0.5V. Gate current consumption is < 1mA. App Note [2] Bias Arrangement - Each DC pad (Vg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. App Note [3] USB/LSB Selection - IF1 and IF2 are fed through a 180º Hybrid coupler for optimum performance. IF1 can be singly fed with IF2 terminated in 50 Ohm for ease of use. This will result in approximately 2 dB reduction in IP3 and conversion gain performance.

20.0-38.0 GHz GaAs MMIC Balanced Mixer Page 5 of 5Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. November 2005 - Rev 21-Nov-05