23A017 NJSEMI | Alldatasheet
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Technical content
E.IIELI ., fi ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 23A017
1.7 Watts, 20 Volts, 280 mA
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. Thjs transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25°C 6.0 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature
50 Volts
3.5 Volts
- 65 to -f- 200°C + 200°C CASE OUTLINE 55BT, STYLE 2 ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 2.3 GHz Ic = 280mA Vcc = 20 Volts Vce = 20V, Ic =280 mA MIN 1.7 6.25 3.4 TYP 2.2 7.6 3.7 MAX .38 9:1 UNITS Watts Watts dB GHz BVebo BVces BVceo HKE Cob 6jc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Thermal Resistance Ie = 2mA Ic = 20 mA Ic = 20 mA Vce = 5 V, Ic = 200 mA Vcb = 28V, f = 1 MHz 3.5 4.8 Volts Volts Volts PF °c/w