23A017 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 23A017
1.7 Watts, 20 Volts, Class A
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. CASE OUTLINE 55BT, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 6.0 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 800 mA Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg Ft VSWR Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance F = 2.3 GHz Ic = 280 mA Vcc = 20 Volts Vce = 20V, Ic =280 mA 1.7 6.25 3.4 2.2 7.6 3.7 .38 9:1 Watts Watts dB GHz BVebo BVces BVceo h FE Cob θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Thermal Resistance Ie = 2 mA Ic = 20 mA Ic = 20 mA Vce = 5 V, Ic = 200 mA Vcb = 28V, f = 1 MHz 3.5 4.8 14 16 Volts Volts Volts pF C/W o Initial Issue June, 1994
23A017-2 (20V, 280mA) MMICAD for Windows Fri Aug 26 16:40:51 1994 CIRCUIT: MES Mhz MAG ANG MAG ANG MAG ANG MAG ANG