23A003 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 23A003
0.3 Watts, 15 Volts, Class A
GENERAL DESCRIPTION CASE OUTLINE The23A003 is a COMMON EMITTER transistor capable of providing 0.3 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. 55BT, STYLE 2 B08 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 3.0 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 0.3 Amps Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Power Input Ic = 100 mA 0.03 Watts Pg Ft VSWR Power Out F = 2.3 GHz 0.3 Watts Power Gain Vcc = 15 Volts 10.0 11.0 dB Transition Frequency Vce = 15V, Ic =100 mA 4.2 4.5 GHz Load Mismatch Tolerance 10:1 BVebo BVces Collector to Emitter Breakdown Ic = 20 mA 50 Volts BVceo h FE Cob θjc Emitter to Base Breakdown Ie = 2 mA 3.5 Volts Collector to Emitter Breakdown Ic = 20 mA 20 Volts DC Current Gain Vce = 5 V, Ic = 100 mA 20 Capacitance Vcb = 20V, f = 1 MHz 2.5 pF C/WThermal Resistance 45 o Initial Issue November 1996