SPW20N60S5 INFINEON | Alldatasheet
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Technical content
2004-03-30Rev. 2.1 Page 1 SPW20N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.19 Ω ID 20 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance P-TO247 Type Package Ordering Code SPW20N60S5 P-TO247 Q67040-S4238 Marking 20N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 40 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 690 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 20 A, VDD = 50 V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 208 W Operating and storage temperature Tj , Tstg -55... +150 °C
2004-03-30Rev. 2.1 Page 2 SPW20N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 50 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=20A - 700 - Gate threshold voltage VGS(th) ID=1000µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 250 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=13A, Tj=25°C Tj=150°C 0.16 0.43 0.19 Ω Gate input resistance RG f=1MHz, open Drain - 12 -
2004-03-30Rev. 2.1 Page 3 SPW20N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=13A - 12 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 3000 - pF Output capacitance Coss - 1170 - Reverse transfer capacitance Crss - 28 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 83 - pF Effective output capacitance,3) time related Co(tr) - 160 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=20A, RG=3.6Ω - 120 - ns Rise time tr - 25 - Turn-off delay time td(off) - 130 195 Fall time tf - 30 45 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=20A - 21 - nC Gate to drain charge Qgd - 47 - Gate charge total Qg VDD=350V, ID=20A, VGS=0 to 10V - 79 103 Gate plateau voltage V(plateau) VDD=350V, ID=20A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2004-03-30Rev. 2.1 Page 4 SPW20N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 20 A Inverse diode direct current, pulsed ISM - - 40 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 610 - ns Reverse recovery charge Qrr - 12 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.00769 K/W Rth2 0.015 Rth3 0.029 Rth4 0.114 Rth5 0.136 Rth6 0.059 Thermal capacitance Cth1 0.0003763 Ws/K Cth2 0.001411 Cth3 0.001931 Cth4 0.005297 Cth5 0.012 Cth6 0.091 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2004-03-30Rev. 2.1 Page 5 SPW20N60S5
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 W 240 SPW20N60S5 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 20 V 30 VDS A ID 10V 20V 15V 12V 11V
2004-03-30Rev. 2.1 Page 6 SPW20N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 20V 12V 10V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 30 A 40 ID 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 mΩ 1.5 RDS(on) 6.5V 7.5V 8.5V 10V 12V 20V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 13 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 SPW20N60S5 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 5 10 V 20 VGS A ID 25°C 150°C
2004-03-30Rev. 2.1 Page 7 SPW20N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 20 A pulsed 0 20 40 60 80 nC 120 QGate V SPW20N60S5 VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPW20N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 750 EAS
2004-03-30Rev. 2.1 Page 8 SPW20N60S5
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPW20N60S5 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: EAR=1mJ 10 4 10 5 10 6 Hz f 100 200 300 W 500 PAR 15 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF C Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS µJ Eoss
2004-03-30Rev. 2.1 Page 9 SPW20N60S5 Definition of diodes switching characteristics
2004-03-30Rev. 2.1 Page 10 SPW20N60S5 P-TO-247-3-1 6.35 15.9 6.17 9.91 20.9 4.37 5.94 ø3.61 2.97 x 0.127 1.2 2.92 5.46 2.03 5.03 0.762 MAX. 2.4 +0.05 41.22 20˚ D 7 D 1.75 1.14 0.243 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12
2004-03-30Rev. 2.1 Page 11 SPW20N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.