20N170FP MICROSS | Alldatasheet
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N-Channel Enhancement Mode MOSFET Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Symbol Parameter Value Unit Conditions ID Continous Drain Current 20 A TC = 25°C ID, pulse Pulsed Drain Current 62 A TC = 25°C EAS Avalanche Energy, Single Pulse 520 mJ ID = 10A IAR Avalanche Current, Repetitive 20 A Limited by Tjmax dv/dt MOSFET dv/dt Ruggedness 50 V/ns VDS = 480V, ID = 20A, Tj = 125°C VGS Gate Source Voltage ±20 V Static ±30 AC (f>Hz) Ptot Power Dissipation 35 W TC = 25°C Tj, Tstg Operating and Storage Temperature -55 to +150 °C Mounting Torque 50 Ncm M 2.5 screws Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID TA = 25°C 20A Max V(BR)DSS ID = 250uA 600V Min rDS(ON) VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 3.5 °C/W RthJA Thermal Resistance, Junction to Ambient - - 72 Leaded Tsold Soldering Temperature, Wave Soldering Only Al- lowed At Leads - - 260 °C 1.6mm (0.063in.) from Case for 10s Pin Description: TO-220 D G S Symbol Parameter Values Unit Conditions Min Typ Max Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS Drain to Source Breakdown Voltage 600 640 - V VGS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 2.1 3 3.9 VDS = VGS, ID = 250µA IDSS Zero Gate Voltage Drain Current - 0.1 1 µA VDS = 600V, VGS = 0V, Tj = 25°C - - 100 VDS = 600V, VGS = 0V, Tj = 150°C IGSS Gate Source Leakage Current - - 100 nA VGS = ±20v, VDS = 0V RDS(on) Drain to Source On-State Resistance - 0.17 0.199 Ω VGS = 10V, ID = 10A, Tj = 25°C - 0.52 - VGS = 10V, ID = 10A, Tj = 150°C RGS Gate Resistance - 4.3 - Ω f = 1 MHz, open drain
Ciss Input Capacitance - 2020 - pF VGS = 0V, VDS = 25V, f = 1 MHzCoss Output Capacitance - 980 - Crss Reverse Transfer Capacitance - 9 - gfs Transconductance - 19 - S VDS = >2*ID* RDS, ID = 2A td(on) Turn-on Delay Time - 39 - nS VDS = 480V, VGS = 10V, ID = 4A, RG = 4Ω (External) Tr Rise Time - 3.5 - td(off ) Turn-off Delay Time - 55 - tf Fall Time - 7 - Symbol Parameter Values Unit Conditions Min Typ Max Gate Charge Characteristics Qgs Gate to Source Charge - 13 - nC VDS = 480V, ID = 20A, VGS = 10V Qgd Gate to Drain Charge - 23 - Qg Gate Charge Total - 62 - Vplateau Gate Plateau Voltage - 5.8 - V Reverse Diode VSD Diode Forward Voltage - 0.9 1.2 V VGS = 0V, IS = IF trr Reverse Recovery Time - 407 - ns VRR = 480V, IS = IF, diF/dt = 100 A/µSQrr Reverse Recovery Charge - 6.7 - µC Irm Peak Reverse Recovery Current - 32 - A Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
VGS = 10V to 7V Output Characteristics Transfer Characterstics On State Resistance vs Drain Current Qg - Total Gate Charge (nC) Gate Charge On Resistance vs Junction Temperature VGS = 10V ID = 10A VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A)RDS(on) - On State Resistance (Normalized) 200 0.5 300 1.5 2.0 1.0 400 2.5 500 3.0 3.5 4.0 100 0 0.0 0 -50 015 40 10075 6 10 50 60 150125 40 50 60 70 810 3020 5025 10 0-25 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com ICE20N170FP TJ = 150°C 25°C VGS = 10V VDS = 480V ID = 20A VDS - Drain to Source Voltage (V) ID - Drain Current (A) TJ - Junction Temperature (°C) VGS - Gate to Source Voltage (V)
Drain to Source Breakdown Voltage vs. Junction Temperature -50 25 50 75 100 125 1500-25 ID = 1mA VDS- Drain to Source Voltage (V)TJ - Junction Temperature (°C) t - Time (seconds) Maximum Rate Forward Biased Safe Operating Area Transient Thermal Response - Junction to Case V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) r(t) - Transit Thermal Resistance (Normalized) ID - Drain Current (A) Single Pulse Tc = 25°C T = 150°C VGS = 10V RDS (ON) Limit Package Limit Thermal Limit 0.5 0.2 0.1 10us 100us 1ms 10ms DC 0.05 0.02 Single Pulse 0.1 0.01 0.9 1.0 1 0.10 1.1 10 100 1.00 1.2 0.01 0.00 0.8 100 100010 VDS- Drain to Source Voltage (V) Capacitance C - Capacitance (pF) Crss Coss Ciss 1000 100 10000 0 300 400 500 600200100 ID = 250µA TJ - Junction Temperature (°C) Gate Threshold Voltage vs. Junction Temperature VGS(th) - Gate Threshold Voltage (Normalized) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 25 50 75 100 125 1500-25 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com Notes: PDM t2Duty Cycle, D = ICE20N170FP