2001 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2001
1.0 Watt - 28 Volts, Class C
The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. CASE OUTLINE 55BT-1, Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 5.0 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 0.25 A Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR 1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 2 GHz Vcb = 28 Volts Po = 1.0 Watts As Above F = 2 GHz, Po = 1.0 W 1.0 9.0 9.5 0.125 30:1 Watt Watt dB BVces BVcbo BVebo Icbo h FE Cob θjc Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 10 mA Ic = 1 mA Ie = 1.0 mA Vcb = 28 Volts Vce = 5 V, Ic = 100 mA F =1 MHz, Vcb = 28 V 3.5 4.0 500 Volts Volts Volts µA pF /G28 C /W Issue August 1996