1951A MITSUBISHI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
MITSUBISHI SEMICONDUTOR <GaAs FET> MGF195MGF195MGF195MGF1951111AAAA Medium Power Microwave MESFET MITSUBISHI
1 Aug 2002
(1/4) PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics.
FEATURES
- High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz
- Leadless Ceramic Package APPLICATION S- to Ku-Band Driver Amplifiers and Oscillators QUALITY General Grade
ORDERING INFORMATION
Part Number Quantity Supply Form MGF1951A-01 3.000 pcs/reel Tape & Reel ABSOLUTE MAXIMUM RATINGS (Ta=+25°C) Symbol Parameter Rating Unit VGDO Gate to Drain Voltage -8 V VGSO Gate to Source Voltage -8 V ID Drain Current 120 mA PT Total Power Dissipation 300 mW Tch Channel Temperature 125 °C Tstg Storage Temperature -65 to +125 °C ELECTRICAL CHARACTERISTICS (Ta=+25°C) Symbol Parameter Test Conditions MIN TYP MAX Unit V(BR)GDO Gate to Drain Breakdown Voltage I G=-30µA -8 -15 — V IDSS Saturated Drain Current V DS=3V, VGS=0V 35 60 120 mA VGS(off) Gate to Source Cut-off Voltage V DS=3V, ID=300µA -0.3 -1.4 -3.5 V P1dB Output Power at 1dB Gain Compression VDS=3V, ID=30mA, f=12GHz 11 13 — dBm GLP Linear Power Gain VDS=3V, ID=30mA, Pin=-5dBm, f=12GHz 79 — d B Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors ma y lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
MITSUBISHI SEMICONDUTOR <GaAs FET> MGF195MGF195 MGF195MGF19511 11AA AA Medium Power Microwave MESFET MITSUBISHI (2/4) PRELIMINARY OUTLINE DRAWING (mm) Top Side Bottom 2-0.5 ±0.05 0.20 ±0.1 0.80 ±0.1 +0.2 -0.12.15 2-R0.275 2-R0.20 x Gate (round shape) y Source z Drain (square shape) +0.2 -0.12.15 View A View A (2.30) (0.30) 4A A 2-(2.20) 2-(1.02) 4-0.55 ±0.05 1.2 ±0.05 x z y z y yx zy yx y x
MITSUBISHI SEMICONDUTOR <GaAs FET> MGF195MGF195MGF195MGF1951111AAAA Medium Power Microwave MESFET MITSUBISHI (3/4) PRELIMINARY TYPICAL CHARACTERISTICS (Ta=+25°C) DRAIN CURRENT vs DRAIN VOLTAGE Drain Current ID (mA) OUTPUT POWER vs INPUT POWER -10 -5 0 5 10 Input Power Pin (dBm) Output Power Pout (dBm) 0 1 2 3 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain Current ID (mA) DRAIN CURRENT vs GATE VOLTAGE VDS=3V ID=30mA f=12GHz -0.2V/step VGS=0V VDS=3V
MITSUBISHI SEMICONDUTOR <GaAs FET> MGF195MGF195MGF195MGF1951111AAAA Medium Power Microwave MESFET MITSUBISHI (4/4) PRELIMINARY S PARAMETERS (VDS=3V, ID=30mA, Ta=+25°C) S11 S21 S12 S22f (GHz) Mag Ang Mag Ang Mag Ang Mag Ang K MAG/MSG (dB) S-Parameter Reference Planes Gate Drain Source Source