18KWR0327

18KWR0327 MIMIX | Alldatasheet

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Input Power (RF Pin) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Chip Device Layout Page 1 of 6 13.0-25.0 GHz GaAs MMIC Image Reject Mixer 18KWR0327 Electrical Characteristics (Ambient T emperature T = 25o C) Units GHz GHz GHz GHz dB dB dB dB dBm dBc dB dB dB dBm Min. 15.0 13.0 11.0 DC Typ. 10.0 10.0 TBD 7.0 +16.0 20.0 TBD TBD TBD +12.0 Max. 25.0 25.0 29.0 4.0 Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) RF Return Loss (S11) IF1/IF2 Return Loss (S22) LO Return Loss (S33) Conversion Loss (S21) LO Input Drive (P LO) Image Rejection Isolation LO/RF Isolation LO/IF Isolation RF/IF Output Third Order Intercept (OIP3) November 2005 - Rev 21-Nov-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Mixer Measurements Page 2 of 6 18KWR0327 2902_0327: USB conversion gain vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm -20 -18 -16 -14 -12 -10 10 12 14 16 18 20 22 24 26 28 RF freq (GHz) USB conversion gain (dB) 2 902_ 0327 _R2C 2_USB_16 0220 04_1 623.mix 2 902_ 0327 _R5C 5_USB_16 0220 04_1 634.mix 2 902_ 0327 _R3C 3_USB_16 0220 04_1 630.mix 2 902_ 0327 _R2C 6_USB_16 0220 04_1 627.mix 2 902_ 0327 _R6C 2_USB_16 0220 04_1 637.mix 2902_0327: LSB conversion gain vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm -20 -18 -16 -14 -12 -10 8 1 01 21 41 61 82 02 22 4 RF fr eq (G Hz) LSB conversion gain (dB) 29 0 2 _0 3 2 7_ R 2 C2 _ L SB_ 1 60 2 2 00 4 _ 16 4 2 .mi x 29 0 2 _0 3 2 7_ R 5 C5 _ L SB_ 1 60 2 2 00 4 _ 16 5 2 .mi x 29 0 2 _0 3 2 7_ R 3 C3 _ L SB_ 1 60 2 2 00 4 _ 16 4 8 .mi x 29 0 2 _0 3 2 7_ R 2 C6 _ L SB_ 1 60 2 2 00 4 _ 16 4 5 .mi x 29 0 2 _0 3 2 7_ R 6 C2 _ L SB_ 1 60 2 2 00 4 _ 16 5 5 .mi x 2902_0327: image rejection vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm -40 -35 -30 -25 -20 -15 -10 10 12 14 16 18 20 22 24 26 28 RF freq (GHz) USB image rejection (dBc) 2 902_ 0327 _R2C 2_USB_16 0220 04_1 623.mix 2 902_ 0327 _R5C 5_USB_16 0220 04_1 634.mix 2 902_ 0327 _R3C 3_USB_16 0220 04_1 630.mix 2 902_ 0327 _R2C 6_USB_16 0220 04_1 627.mix 2 902_ 0327 _R6C 2_USB_16 0220 04_1 637.mix 2902_0327: image rejection vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm -40 -35 -30 -25 -20 -15 -10 8 1 01 21 41 61 82 02 22 4 RF fr eq (G Hz) LSB image rejection (dBc) 29 0 2 _0 3 2 7_ R 2 C2 _ L SB_ 1 60 2 2 00 4 _ 16 4 2 .mi x 29 0 2 _0 3 2 7_ R 5 C5 _ L SB_ 1 60 2 2 00 4 _ 16 5 2 .mi x 29 0 2 _0 3 2 7_ R 3 C3 _ L SB_ 1 60 2 2 00 4 _ 16 4 8 .mi x 29 0 2 _0 3 2 7_ R 2 C6 _ L SB_ 1 60 2 2 00 4 _ 16 4 5 .mi x 29 0 2 _0 3 2 7_ R 6 C2 _ L SB_ 1 60 2 2 00 4 _ 16 5 5 .mi x 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Mixer Measurements (cont.) Page 3 of 6 18KWR0327 2902_0327: USB conversion gain vs. RF freq LO=varied, IF=2GHz, RF=-20dBm -20 -18 -16 -14 -12 -10 10 12 14 16 18 20 22 24 26 28 RF freq (GHz) USB conversion gain (dB) 290 2_03 27_R 3C3_ USB_ 1602 2004 _161 5_15 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 8_10 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 4_14 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 0_17 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _161 9_16 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _173 2_12 dBm.mix 2902_0327: image rejection vs. RF freq LO=varied, IF=2GHz, RF=-20dBm -40 -35 -30 -25 -20 -15 -10 10 12 14 16 18 20 22 24 26 28 RF freq (GHz) USB image rejection (dBc) 2 9 02 _ 0 32 7 _ R3 C 3 _U SB _1 6 0 22 0 0 4_ 1 6 15 _ 1 5d Bm .mi x 2 9 02 _ 0 32 7 _ R3 C 3 _U SB _1 6 0 22 0 0 4_ 1 7 28 _ 1 0d Bm .mi x 2 9 02 _ 0 32 7 _ R3 C 3 _U SB _1 6 0 22 0 0 4_ 1 7 24 _ 1 4d Bm .mi x 2 9 02 _ 0 32 7 _ R3 C 3 _U SB _1 6 0 22 0 0 4_ 1 7 20 _ 1 7d Bm .mi x 2 9 02 _ 0 32 7 _ R3 C 3 _U SB _1 6 0 22 0 0 4_ 1 6 19 _ 1 6d Bm .mi x 2 9 02 _ 0 32 7 _ R3 C 3 _U SB _1 6 0 22 0 0 4_ 1 7 32 _ 1 2d Bm .mi x 2902_0327: USB conversion gain vs. RF freq LO=16dBm, IF=2GHz, RF=varied -20 -18 -16 -14 -12 -10 10 12 14 16 18 20 22 24 26 RF fr eq (G Hz) USB conversion gain (dB) 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 5_-15 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 0_-5d Bm.mi x 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 8_-10 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 4_0d Bm.mi x 2902_0327: image rejection vs. RF freq LO=16dBm, IF=2GHz, RF=varied -40 -35 -30 -25 -20 -15 -10 10 12 14 16 18 20 22 24 26 RF freq (GHz) USB image rejection (dBc) 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 5_-15 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 0_-5d Bm.mi x 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 8_-10 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 4_0d Bm.mi x 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05

2.500 (0.098) 1.885 (0.074) 0.0 0.0 1.424 (0.056) 2.100 (0.083) 1.250 (0.049) 1.424 (0.056) Pre-production IF1 LO IF2 RF Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Mechanical Drawing (Note: Engineering designator is 18KWR0327) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF) Bond Pad #2 (IF1) Bond Pad #3 (LO) Bond Pad #4 (IF2) RF Arrangement Page 4 of 6 18KWR0327 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 5 of 6 App Note [1] USB/LSB Selection - USBLSB IF1IF2 An alternate method of Selection of USB or LSB: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer 18KWR0327 For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Upper Side Band operation (USB): -90o In Phase Combiner USB In Phase Combiner LSB -90o IF2 IF1 IF2 IF1 November 2005 - Rev 21-Nov-05

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 6 of 6 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. 18KWR0327 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05