2SC1815 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. aimax. « High Voltage and High Current ia : VoEO=50V (Min.), Ig =150mA (Max.) 3 + Excellent hry Linearity 5 : hpR(2)=100 (Typ.) at Von =6V, Ic=150mA ass a : hFE (¢=0.1mA)/hpE (ig =2mA)=0.95 (Typ.) aS oMax. sa « Low Noise : NF=1dB(Typ.) at f=1kHz 045 a] og * Complementary to 2SA1015 (0, Y, GR class) “ MAXIMUM RATINGS (Ta = 25°C) a7 127 CHARACTERISTIC SYMBOL UNIT 3 Lan Collector-Base Voltage | verso | 60 | v_ | er) i Collector-Emitter Voltage Vcr VEBO 1, EMITTER | Base Current | eT ma We 70.92 | Collector Power Dissipation | Power Dissipation [ Po | [400 | mw | EIAJ $0-43 | Junction Temperature —ss«| “T, | 5s] TOSHIBA 2-bFIB Storage Temperature Range —55~125 Weight : 021g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Von=60V, Ip=0 P-t—[o|sa] | Emitter Cutoff Current | Inno | Vep=5vito=0 | — | — | oa | pa | Vcr=6V, Ic¢=2mA 70 700 DC Current Gain (Note) | "CE c Von=6V,Io=150ma | 25 | 100 | — | Collector-Emitter Saturation Voltage VOR(sat) | 10=100mA, TB=10mA | = | oa [oa] v | Base-Emitter Saturation Voltage | Vpr(sat) | Ic=100mA, Ip=10mA | — | — | 10[ v | Transition Frequency Von=10V,Io=ima | 80 | — |_| mm] Collector Ouput Capacitance Vcp=10V, Ip=0, f=1MHz | — | 20 | 35 | pF | . , Von=10V, Ig=—1mA Base Intrinsic Resistance bb’ f=30MHz 50 a —— Vor=6V, I¢=0.1mA Noise Figure NF f=1kHz, Rg=10k0 10 Note : hyp Classification 0:70~140 Y:120~240 GR:200~400 BL : 350~700 2610016402 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3
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CLT CU A | ee a8 =e =| ja me ee | ag Ef m-100e {fr a6 SSS =a BES ee 3 os a F903 ee os} — Tn 3 “TS SETH oo Co on oot Ss TTT ot LUTE TTI TIT 01 0.3 1 3 10 30 100 = 300 Ol 03 1 3 10 30 100 = 300 COLLECTOR CURRENT Ig (mA) COLLECTOR CURRENT Ic (mA) Ip — VBE 3000 fr — Ic — ns oo oF | ‘CE=: a ——— sd a ee 3 |}. _f ff & FEE
2 Lf ff | ff | = 500k — EHH tr
“ SS g soop— I ee NT o tif |]1: es a0 Fecnce Fs) EA doy | rook att fo} ifdef if fo: se | 2 Seq Se = 2 al Fe g So ed Ae Wy i a == = Pe ny a a CT) tr 03-1 ea 80 «1007 900 BASE-EMITTER VOLTAGE Vp (V) EMITTER CURRENT Ic (mA) Q61001EAA2” @ The information contained herein is presented only as a guide for the applications ‘of our products. No responsibility is assumed by TOSHIBA [OATH foray itngenens of wees bropry argue cae she Sa arte Uehmay ess fom le. No Teese granted by implication or otherwise under any intellectual roperty ‘or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice ining 4957-04-10 23
h PARAMATER - Ic h PARAMATER - VCE 2000 2000) | [TTA cous seme III] || |fcounos earns 1000-— Boe ASDC 1000-4 Ig=2mA Ta=25°C f=2T0Hz so on sft Se Pree oof 6 “ee CO ed a | men cite —| oor ca oe SS Sa esate eee we gh SN Bie xk FH SH e oat ld ep a SCN cot} MA co Fa SOc ere re a) Ey ja NOSE" HE | GRY ma Py ao HH A Fa NS NU 1] 3 HY NUL a NG (aia e JUNE = ARNG O7//AmmL s +E NZ _— ah ieee aw 6A sae a a FESS oN Ef roe 8 | FTN KOA FE Bt SS Sil | PSOE Hite BSS BOORAH OE Tiexke 4 ce ft —] SST VRC NN Jj Thiex<ko || 7 SSOYIY NNSA i in BSSSKe NEN epee pl | = ON oof ec Po PN 2 |] TT exto—# HIE NE TT CT bre<20° 4 77 T oI eT TTT ICS] 01 0.3 1 3 10 30 05 1 3 10 30 100 300 COLLECTOR CURRENT Ic (mA) COLLECTOR-EMITTER VOLTAGE Vcg (V) ¢ Pc - Ta 500) es ee ore Nee - EEE NEEEELE 2°CT TT NET = od _ |. | Ne} tt Nee z ott ttt Net on eeeeeeNe
2 LitTitttTtinNn
° 0 25 50 1 100 125 AMBIENT TEMPERATURE Ta (°C) 1997-04-10 3/3