16RIA NJSEMI | Alldatasheet

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, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 16RIA Series Medium Power Phase Control Thyristors (Stud Version), 16 A (TO-48) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT Tj TO-48 (TO208AA) Single SCR 16A

100 V to 1200V

1.75V 60 mA -65°Cto 125 °C

FEATURES

  • Improved glass passivation for high reliability and exceptional stability at high temperature
  • High dl/dt and dV/dt capabilities
  • Standard package
  • Low thermal resistance
  • Metric threads version available
  • Types up to 1200 V VDRM/VRRM
  • Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS
  • Medium power switching
  • Phase control applications
  • Can be supplied to meet stringent military, aerospace and other high reliability requirements MAJOR RATINGS AND CHARACTERISTICS PARAMETER 'T(AV) ll(RMS) ITSM I2t VDRM/VRRM Tj TEST CONDITIONS TC 50 Hz 60 Hz 50 Hz 60 Hz Typical VALUES 340 360 574 524 100 to 1200 110 - 65 to 1 25 UNITS A A A A^s V ps ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 16RIA VOLTAGE CODE 100 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE <1> V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE <2> V 150 300 500 700 900 1100 1300 IDRM/IRRM MAXIMUM AT Tj = Tj MAXIMUM mA Notes f1' Units may be broken over non-repetitively in the off-state direction without damage, if dl/dt does not exceed 20 A/ps (2) For vojtage_pulses withjp < 5 ms

Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current Maximum I2t for fusing Maximum !2^/t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Latching current SYMBOL |T(AV) ll(RMS) ITSM I2t PVt VT(TO)1 Vl(TO)2 Tt1 te VTM IH IL TEST CONDITIONS 180° sinusoidal conduction t = 10ms t = 8.3 ms t= 10ms t = 8.3 ms t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied Sinusoidal half wave, initial Tj = Tj maximum t = 0.1 to 10 ms, no voltage reapplied, Tj = Tj maximum (16.7 % x n x IT(AV) < I < t x IT(AV)). Tj = Tj maximum (I > it x ITJAVJ). Tj = Tj maximum (1 6.7 % X 71 X IT(AV) < 1 < 71 X li(AV)), Tj = Tj maximum (1 > n x ITJAV)). Tj = Tj maximum lpk = 50 A, Tj = 25 "C node supply 6 V, resistive load VALUES 340 360 285 300 574 524 405 375 5740 0.97 1.24 17.9 13.6 1.75 130 200 UNITS A A A A2s A2Vs V mil V mA SWITCHING PARAMETER VDRM < 600 V Maximum rate of rise VDRM - 80° v of turned-on current VDRM < 1 QQO V VDRM < 1 600 V Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL dl/dt *gt trr tq TEST CONDITIONS Tj = Tj maximum, VDM = Rated VDRM ITM = (2 x rated dl/dt) A Tj = 25 °C, at rated VDRM/VRRM, Tj = 125 °C Tj = Tj maximum, ITM = IT(AV), tp > 200 us, dl/dt = - 10 A/us Tj = Tj maximum, ITM = IT(AV), tp > 200 us, VR = 100 V, dl/dt = - 1 0 A/us, dV/dt = 20 V/ps linear to 67 % VDRM, gate bias 0V to 100 W VALUES 200 180 160 150 0.9 110 UNITS A/us us

  • tq = 10 ps up to 600 V, tq = 30 us up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dv/dt TEST CONDITIONS Tj = Tj maximum linear to 100 % rated VDRM Tj = Tj maximum linear to 67 % rated VDRM VALUES 100 300 <1> UNITS v/us Note <1) Available with: dV/dt = 1000 V/us, to complete code add S90 i.e. 16RIA120S90

Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage . DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM -VGM IGT VQT IGD VGD TEST CONDITIONS Tj = Tj maximum Tj = Tj maximum Tj = - 65 °C Tj = 25 °C Tj = 125 °C Tj = - 65 °C Tj = 25 °C Tj = 125"C Maximum required gate trigger current/voltage are the lowest value which will trigger all units

6 V anode to cathode applied

Tj = Tj maximum, VD^M = Rated value Tj = Tj maximum, VDRM = Ra'ed value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDHM anode to cathode applied VALUES 8.0 2.0 1.5 3.0 2.0 1.0 2.0 0.2 UNITS W A V mA V mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL Tj, TStg RthJC RthCS TEST CONDITIONS DC operation Mounting surface, smooth, flat and greased Mounting torque Approximate weight- Case style Lubricated threads (Non-lubricated threads) See dimensions - link at the end of datasheet VALUES -65 to 125 0.86 0.35 TO NUT 20 (27.5) 0.23 (0.32) 2.3(3.1) TO DEVICE 0.29 2.8 0.49 UNITS K/W Ibf • in kgf • m N • m g 02. TO-208AA (TO-48) ARthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.21 0.25 0.31 0.45 0.76 RECTANGULAR CONDUCTION 0.15 0.25 0.34 0.47 0.76 TEST CONDITIONS Tj = Tj maximum UNITS K/W Note The table above shows the increment of thermal resistance Rthjc when devices operate at different conduction angles than DC

(TO-48) DIMENSIONS in millimeters (inches) 01.7/1.8 12.8 MAX. (0.5 MAX.) 10.7 r 11.5 i • 7\\" j ~ i (0 0.06/0.071 n — »- 30.2 MAX. (0.1 8 MAX.) 22.2 MAX. (0.87 MAX.) m J -s, 1 If \\~\\\\_ 03.9/4.1 \\\\^Jj (00.15/0.16) J f JX, 3X 1 1/4"-28UNF-2A For metric device W6 x 1 0 15.5 (00.61)