1618-35

1618-35 GHZTECH | Alldatasheet

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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1618-35

35 Watt - 28 Volts, Class C

GENERAL DESCRIPTION CASE OUTLINE The 1618-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1600-1800 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input and Output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package. 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 135 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 45 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 12 A Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Power Input Vcb = 28 Volts Pg ηc VSWR 1 Power Out F = 1600-1800 MHz Power Gain Pin = 7 Watts Collector Efficiency As Above Load Mismatch Tolerance F = 1.1 GHz, Pin = 7 W

35 Watt

7.0 dB 40 %

7 Watt

10:1 BVces BVebo H FE Cob θjc Collector to Emitter Breakdown Ic = 20 mA 45 Volts Emitter to Base Breakdown Ie = 15 mA 3.5 Volts Current Gain 10 100 Output Capacitance pF Thermal Resistance 1.3 C/W Vce = 5 V, Ic = 1 A F = 1 MHz, Vcb = 28V o Issue A, July 1997