1617-35 GHZTECH | Alldatasheet
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R.1.A.990106-HERIC GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRI BED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING T HE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1617-35
35 Watts, 28 Volts, Pulsed
The 1617-35 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1540 – 1660 MHz. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life. CASE OUTLINE 55AT ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C 290 W Maximum Voltage and Current Collector to Base Voltage (BVces)5 0 V Emitter to Base Voltage (BVebo)3 . 0 V Collector Current (Ic)6 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25 °°°°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out F = 1660 MHz 35 W Pin Power Input Vcc = 28 Volts 6 W Pg Power Gain PW = Note 1 7.6 dB ηc Collector Efficiency DF = Note 1 50 % VSWR Load Mismatch Tolerance F = 1540 MHz 10:1 FUNCTIONAL CHARACTERISTICS @ 25 °°°°C BV ebo Emitter to Base Breakdown Ie = 20 mA 3.0 V BV ces Collector to Emitter Breakdown Ic = 60 mA 50 V hFE DC – Current Gain Vce = 5V, Ic = 500mA 20 θjc2 Thermal Resistance 0.6 °C/W NOTE 1: 5 µs at 15% Duty 2. At rated pulse conditions Initial Issue May 1999