15OSC0502

15OSC0502 MIMIX | Alldatasheet

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+5.0 dBm Output Power -35 dBc Harmonic Suppression -88 dBc/Hz @ 100KHz Phase Noise 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Parameter Supply Voltage (Vcc1,2,3) Supply Voltage (Vtune) Supply Current (Icc1,2,3) Supply Current (Itune) Storage Temperature (Tstg) Operating Temperature (Ta) Junction Temperature (Tjn) +5.0 VDC +7.0 VDC 150 mA 1 mA -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout (1) Junction temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Mimix Broadband's 14.7-15.7 GHz GaAs HBT VCO is a fully integrated oscillator MMIC with on-chip frequency doubler and divide-by-8 prescaler (w.r.t RFout). This design is based on a cross coupled differential pair with on-chip tuning diode and resonator. The use of a high-Q resonator structure and integrated varactor diodes results in optimum phase-noise performance, whilst the integration of frequency doubler and prescaler reduce application complexity and time-to-market. This MMIC uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure low flicker (1/f ) noise and high reliability. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Electrical Characteristics (Ambient T emperature T = 25 oC) Absolute Maximum Ratings Frequency Range (f ) Prescaler Frequency Range (f ) Fundamental Output Power (Pout) Prescaler Output Power (Pout) SSB Phase Noise @ 100 kHz Offset SSB Phase Noise @ 1 MHz Offset Subharmonic Suppression 2nd Harmonic Suppression 3rd Harmonic Suppression Frequency Pushing (Vcc) Supply Voltage (Vcc) Frequency Tuning Voltage (Vtune) Supply Current (Icc) (Vcc=4.0V Typical) 15OSC0502

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 2 of 5 Oscillator Measurements May 2005 - Rev 05-May-05 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator 15OSC0502 15OSC0502 Output Frequency vs. Tuning Voltage 14.5 14.7 14.9 15.1 15.3 15.5 15.7 15.9 123456 Vtune (Volts) Fout (GHz) 15OSC0502 Output Harmonics vs. Tuning Voltage -80 -70 -60 -50 -40 -30 -20 -10 123456 Vtune (Volts) Pharm (dBc) Div8 Div4 Div2 15OSC0502 Kvco vs. Tuning Voltage 200 400 600 800 1000 123456 Vtune (Volts) Kvco (MHz/Volt) 15OSC0502 Output Power vs. Tuning Voltage -10 123456 Vtune (Volts) Pout (dBm)

(Maximum 100pF) Vcc2Vcc3 2.000 (0.079) 0.297 (0.011) 0.495 (0.020) 0.000 0.000 1.631 (0.064)4 1.229 (0.048)5 0.732 (0.029) 1.389 (0.055) 2.000 (0.079) 0.991 (0.039) Pre-production Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 3 of 5 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 15OSC0502) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF Div2) Bond Pad #2 (RF Div1) Bond Pad #3 (RF Out) Bond Pad #4 (Vcc1) Bond Pad #5 (Vtune) Bond Pad #6 (Vcc2) Bond Pad #7 (Vcc3) May 2005 - Rev 05-May-05 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator 15OSC0502 15OSC0502 Rf Div RF Out Vcc1 Vtune Vcc2Vcc3

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 4 of 5 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vcc (1,2,3) and Vtune with Vcc(1,2,3)= +4.0 V and Vtune = +1.0 to +6.0 V, Icc1=30mA, Icc2=10mA, Icc3=70mA. App Note [2] Bias Arrangement - Each DC pad (Vcc1, 2, 3 and Vtune) needs to have DC bypass capacitance. (~100 - 200 pF , 100pF max on Vtune) as close to the device as possible. Prescaler output (RF Div1, RF Div2) can be used differential or single-end as required. Functional Diagram & Vtune Equivalent Input Circuit T ypical Application MTTF T able Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius FITs 8.55E+00 9.71E+01 8.20E+02 MTTF Hours 1.17E+08 1.03E+07 1.22E+06 These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. May 2005 - Rev 05-May-05 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator 15OSC0502 15OSC0502 14.7-15.7 GHz 1.84-1.96 GHz 14.7-15.7 GHz

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Page 5 of 5 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. May 2005 - Rev 05-May-05 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator 15OSC0502