15GN03MA

15GN03MA SANYO | Alldatasheet

Document overview

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Technical content

Features

• High cut-off frequency : fT=1.5GHz typ.
• High gain : ⏐S21e⏐2=13dB typ (f=0.4GHz).
• Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 20 V Collector-to-Emitter Voltage V CEO 10 V Emitter-to-Base Voltage V EBO 3V Collector Current I C 70 mA Collector Dissipation P C When mounted on ceramic substrate (250mm2✕0.8mm) 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=10V, IE=0A 0.1 μA Emitter Cutoff Current I EBO VEB=2V, IC=0A 1 μA DC Current Gain h FE VCE=5V, IC=10mA 100 180 Gain-Bandwidth Product f T VCE=5V, IC=20mA 1.0 1.5 GHz Marking : ZC Continued on next page. SANYO Semiconductors DATA SHEET www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001669 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 15GN03MA NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications

No. A1108-2/6 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Output Capacitance Cob V CB=10V, f=1MHz 0.95 1.25 pF Reverse Transfer Capacitance Cre V CB=10V, f=1MHz 0.65 pF Forward Transfer Gain ⏐S21e⏐ 2 VCE=5V, IC=20mA, f=0.4GHz 10 13 dB Noise Figure NF V CE=3V, IC=2mA, f=0.4GHz 1.6 dB Package Dimensions unit : mm (typ) 7023-009 0.65 0.65 2.0 0.9 0.60.3 2.1 1.25 0.4250.425 0.20.3 0.15 0 to 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 02468 1 0 100 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VCE IT08096 IB=0mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IT08097 IC -- VBE 100 1.0 hFE -- IC 1.0 23 5 7 10 23 5 7 100 1.0 23 5 7 10 23 5 7 100 Collector Current, IC -- mA DC Current Gain, hFE IT08098 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA VCE=5V fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz IT08099 VCE=5VVCE=5V

No. A1108-3/6 0 20 40 60 80 100 120 140 160 100 150 200 250 300 350 400 450 IT08104 Collector Dissipation, PC -- mW PC -- Ta 1.0 23 5 7 23 5 7 10 100 ⏐S21e⏐2 -- IC Collector Current, IC -- mA Ambient Temperature, Ta -- °C Forward Transfer Gain, ⏐S21e⏐ -- dB IT08102Collector Current, IC -- mA Noise Figure, NF -- dB IT08103 NF -- IC 1.0 1.0 Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF IT08101 Cre -- VCB 0.1 22 35 5 72 3 71.0 10 0.1 22 35 5 72 3 71.0 10 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF IT08100 f=1MHz f=1MHz 1.0 1035 7 2 35 5 72 3 1.0 ZS=50Ω ZS=Zsopt VCE=5V f=400MHz VCE=3V f=400MHz When mounted on ceramic substrate (250mm2✕0.8mm)

No. A1108-4/6 S Parameters (Common emitter) VCE=5V , IC=1mA, ZO=50Ω VCE=5V , IC=3mA, ZO=50Ω VCE=5V , IC=5mA, ZO=50Ω VCE=5V , IC=10mA, ZO=50Ω

No. A1108-5/6 S Parameters (Common emitter) VCE=5V , IC=15mA, ZO=50Ω VCE=5V , IC=20mA, ZO=50Ω VCE=5V , IC=30mA, ZO=50Ω VCE=5V , IC=50mA, ZO=50Ω

No. A1108-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice.